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Facilitative effect of graphene quantum dots in MoS_2 growth process by chemical vapor deposition
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作者 张璐 王永生 +3 位作者 董艳芳 赵宣 付晨 何大伟 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第1期579-582,共4页
The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter w... The substrate treatment with seeding promoter can promote the two-dimensional material lateral growth in chemical vapor deposition (CVD) process. Herein, graphene quantum dots (GQDs) as a novel seeding promoter were used to obtain uniform large-area MoS2 monolayer. The obtained monolayer MoS2 films were confirmed by optical microscope, scanning electron microscope, Raman and photoluminescence spectra. Raman mapping revealed that the MoS2 monolayer was largely homogeneous. 展开更多
关键词 MOS2 SEED graphene quantum dots (gqds) continuous film
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