Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed...Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.展开更多
A new improved technique,based on the direct current current voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n MOSFET.This tech...A new improved technique,based on the direct current current voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n MOSFET.This technique can be applied to virgin samples and those subjected to hot carrier stress,and the latter are known to cause the interface damage in the drain region and the channel region.The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.展开更多
文摘Interface traps generated under hot carrier (HC) stress in LDD nMOST's are monitored by the direct current current voltage (DCIV) measurement technique and charge pumping (CP) technique.The measured and analyzed results show that the D peak in DCIV spectrum,which related to the drain region,is affected by a superfluous drain leakage current.The band trap band tunneling current is dominant of this current.
文摘A new improved technique,based on the direct current current voltage and charge pumping methods,is proposed for measurements of interface traps density in the channel and the drain region for LDD n MOSFET.This technique can be applied to virgin samples and those subjected to hot carrier stress,and the latter are known to cause the interface damage in the drain region and the channel region.The generation of interface traps density in the channel region and in the drain region can be clearly distinguished by using this technique.
