We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. W...We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.61504107)the Fundamental Research Funds for the Central Universities,China(Grant Nos.3102014JCQ01059 and 3102015ZY043)
文摘We demonstrate that the insertion of a graphene tunnel barrier between Heusler alloy Co_2MnSi and the germanium（Ge） channel modulates the Schottky barrier height and the resistance–area product of the spin diode. We confirm that the Fermi level is depinned and a reduction in the electron Schottky barrier height（SBH） occurs following the insertion of the graphene layer between Co_2MnSi and Ge. The electron SBH is modulated in the 0.34 eV–0.61 eV range. Furthermore,the transport mechanism changes from rectifying to symmetric tunneling following the insertion. This behavior provides a pathway for highly efficient spin injection from a Heusler alloy into a Ge channel with high electron and hole mobility.
