瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处...瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处易形成负斜角边缘结构,导致器件因边缘电场集中而提前击穿,严重影响器件的工作可靠性。本文基于Sentaurus TCAD数值仿真,研究了一种雪崩型SiC-TVS器件结构,该结构采用离子注入形成大曲率半径的U型平面PN结,并将其边缘与Mesa沟槽终端顶点在器件上表面以距离x进行耦合设计,使器件表面形成正斜角终端,有效地避免了边缘电场集中效应。同时x的选取具有一定余量,在工艺上较易实现。最后利用该结构仿真得到了响应时间约5.3ns、钳位因子达到1.01的雪崩型SiC-TVS器件,仿真结果表明新型耦合结构器件对异常瞬态浪涌信号表现出良好的抑制效果。展开更多
GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, i...GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.展开更多
The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface...The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface energy and water exchange over the Chinese Loess Plateau mesa region are evaluated by using data collected during the Loess Plateau land-atmosphere interaction pilot experiment (LOPEX04), which was conducted from 25 August to 12 September 2004 near Pingliang city, Gansu Province of China. The experiment was carried out in a region with a typical landscape of the Chinese Loess Plateau, known as "loess mesa". The experiment's field land utilizations were cornfield and fallow farmland, with the fallow field later used for rotating winter wheat. The autumn daily characteristics of heat and water exchange evidently differed between the mesa cornfield and fallow, and the imbalance term of the surface energy was large. This is discussed in terms of sampling errors in the flux observations-footprint; energy storage terms of soil and vegetation layers; contribution from air advections; and low and high frequency loss of turbulent fluxes and instruments bias. Comparison of energy components between the mesa cornfield and the lowland cornfield did not reveal any obvious difference. Inadequacies of the field observation equipment and experimental design emerged during the study, and some new research topics have emerged from this pilot experiment for future investigation.展开更多
The thermal stability of a vertical-cavity surface-emitting laser(VCSEL) array is enhanced by redesigning the mesa arrangement. Based on a thermoelectric coupling three-dimensional(3D) finite-element model, an opt...The thermal stability of a vertical-cavity surface-emitting laser(VCSEL) array is enhanced by redesigning the mesa arrangement. Based on a thermoelectric coupling three-dimensional(3D) finite-element model, an optimized VCSEL array is designed. The effects of this optimization are studied experimentally. Power density characteristics of VCSEL arrays with different mesa configuration are obtained under different thermal stress in which the optimized device shows improved performance. Optimized device also shows better stability from measured spectra and calculated thermal resistances. The experimental results prove that our simulation model and optimization is instructive for VCSEL array design.展开更多
The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and ...The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.展开更多
Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mas...Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mass index (BMI), waist circumference (WC), and waist-to-hip ratio (WHR) with rapid kidney function decline and incident chronic kidney disease in 4573 non-diabetic adults with eGFR ≥ 60 ml/min/1.73m2 at baseline from longitudinal Multi-Ethnic Study of Atherosclerosis cohort. Kidney function was estimated by creatinine and cystatin C. Multivariate analysis was adjusted for age, race, baseline eGFR, and hypertension. Results: Mean age was 60 years old, BMI 28 kg/m2, baseline eGFRCr 82 and eGFRCys 95 ml/min/1.73m2. Over 5 years of follow up, 25% experienced rapid decline in renal function by eGFRCr and 22% by eGFRCys. Incident chronic kidney disease (CKD) developed in 3.3% by eGFRCys, 11% by eGFRCr, and 2.4% by both makers. Compared to persons with BMI 25, overweight (BMI 25 - 30) persons had the?lowest risk of rapid decline by eGFRCr (0.84, 0.71 - 0.99). In contrast, higher BMI categories were associated with stepwise higher odds of rapid decline by eGFRCys, but remained significant only when BMI ≥ 35 kg/m2 (1.87, 1.41 - 2.48). Associations of BMI with incident CKD were insignificant after adjustment. Large WC and WHR were associated with increased risk of rapid decline only by eGFRCys, and of incident CKD only when defined by both filtration markers. Conclusions: Obesity may be a risk factor for kidney function decline, but associations vary by filtration marker used.展开更多
GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diode...GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.展开更多
We present a detailed study of a superjunction (S J) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure a...We present a detailed study of a superjunction (S J) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (Vce(sat)) and low turn-off loss (Eoff) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce(sat) and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.展开更多
An optical micro electron mechanical system (MEMS) pressure sensor with a mesa membrane is presented. The operating principle of the MEMS pressure sensor is expatiated by the Fabry-Perot (F-P) interference and the...An optical micro electron mechanical system (MEMS) pressure sensor with a mesa membrane is presented. The operating principle of the MEMS pressure sensor is expatiated by the Fabry-Perot (F-P) interference and the relation between deflection and pressure is analyzed. Both the mechanical model of the mesa structure diaphragm and the signal averaging effect is validated by simulation, which declares that the mesa structure diaphragm is superior to the planar one on the parallelism and can reduce the signal averaging effect. Experimental results demonstrate that the mesa structure sensor has a reasonable linearity and sensitivity.展开更多
The contents of seven different phenolic acids such as gallic acid, catechinic acid, pyrocatechol, caffeic acid, coumaric acid, ferulic acid and benzoic acid in the poplar leaves (Populus Simonii×Populus Pyramib...The contents of seven different phenolic acids such as gallic acid, catechinic acid, pyrocatechol, caffeic acid, coumaric acid, ferulic acid and benzoic acid in the poplar leaves (Populus Simonii×Populus Pyramibalis c.v and Populus deltoids) suffocated by Methyl jasmonate (MeJA) and Methyl salicylate (MeSA) were monitored for analyzing their functions in interplant communications by using high-pressure liquid chromatography (HPLC).The results showed that the contents of phenolic acids had obviously difference in leaves exposed to either MeSA or MeJA.When P.deltoides leaves exposed to MeJA or MeSA, the level of gallic acid, coumaric acid, caffeic acid, ferulic acid and benzoic acid was increased, gallic acid in leaves treated with MeJA comes to a peak at 24 h while to a peak at 12-d having leaves treated with MeSA.When P.Simonii ×P.Pyramibalis c.v leaves were exposed to MeJA or MeSA, the level of gallic acid, pyrocatechol and ferulic acid was increased; The catechinic acid and benzoic acid had a little drop; The caffeic acid and coumaric acid were undetected in both suffocated and control leaves.This changed pattern indicated that MeJA and MeSA can act as airborne signals to induce defense response of plants.展开更多
文摘瞬态电压抑制器(Transient Voltage Suppressor,TVS)作为常用的防护型器件具有吸收功率高、响应速度快等特点。目前,雪崩型SiC-TVS器件尚缺乏合理的终端设计,以常用N型衬底为基础的外延P+N-N+/Mesa结构SiC-TVS器件在反偏P+/N-结边缘处易形成负斜角边缘结构,导致器件因边缘电场集中而提前击穿,严重影响器件的工作可靠性。本文基于Sentaurus TCAD数值仿真,研究了一种雪崩型SiC-TVS器件结构,该结构采用离子注入形成大曲率半径的U型平面PN结,并将其边缘与Mesa沟槽终端顶点在器件上表面以距离x进行耦合设计,使器件表面形成正斜角终端,有效地避免了边缘电场集中效应。同时x的选取具有一定余量,在工艺上较易实现。最后利用该结构仿真得到了响应时间约5.3ns、钳位因子达到1.01的雪崩型SiC-TVS器件,仿真结果表明新型耦合结构器件对异常瞬态浪涌信号表现出良好的抑制效果。
文摘GaN-based vertical P-i-N diode with mesa edge terminal structure due to electric field crowding effect, the breakdown voltage of the device is significantly reduced. This work investigates three terminal structures, including deeply etched, bevel, and stepped-mesas terminal structures, to suppress electric field crowding effects at the device and junction edges. Deeply-etched mesa terminal yields a breakdown voltage of 1205 V, i.e., 89% of the ideal voltage. The bevel-mesa terminal achieves about 89% of the ideal breakdown voltage, while the step-mesa terminal is less effective in mitigating electric field crowding, at about 32% of the ideal voltage. This work can provide an important reference for the design of high-power, high-voltage GaN-based P-i-N power devices, finding a terminal protection structure suitable for GaNPiN diodes to further enhance the breakdown performance of the device and to unleash the full potential of GaN semiconductor materials.
文摘The Loess Plateau, located in northern China, has a significant impact on the climate and ecosystem evolvement over the East Asian continent. In this paper, the preliminary autumn daily characteristics of land surface energy and water exchange over the Chinese Loess Plateau mesa region are evaluated by using data collected during the Loess Plateau land-atmosphere interaction pilot experiment (LOPEX04), which was conducted from 25 August to 12 September 2004 near Pingliang city, Gansu Province of China. The experiment was carried out in a region with a typical landscape of the Chinese Loess Plateau, known as "loess mesa". The experiment's field land utilizations were cornfield and fallow farmland, with the fallow field later used for rotating winter wheat. The autumn daily characteristics of heat and water exchange evidently differed between the mesa cornfield and fallow, and the imbalance term of the surface energy was large. This is discussed in terms of sampling errors in the flux observations-footprint; energy storage terms of soil and vegetation layers; contribution from air advections; and low and high frequency loss of turbulent fluxes and instruments bias. Comparison of energy components between the mesa cornfield and the lowland cornfield did not reveal any obvious difference. Inadequacies of the field observation equipment and experimental design emerged during the study, and some new research topics have emerged from this pilot experiment for future investigation.
基金supported by the National Natural Science Foundation of China(Grant Nos.61434005,61474118,61376070,11404326,and 11674314)the Jilin Provincial Scientific and Technological Development Program,China(Grant No.20150203011GX)+1 种基金the Changchun Science and Technology Project,Jilin Province,China(Grant No.15SS02)the Youth Innovation Promotion Association,Chinese Academy of Sciences(Grant No.2017260)
文摘The thermal stability of a vertical-cavity surface-emitting laser(VCSEL) array is enhanced by redesigning the mesa arrangement. Based on a thermoelectric coupling three-dimensional(3D) finite-element model, an optimized VCSEL array is designed. The effects of this optimization are studied experimentally. Power density characteristics of VCSEL arrays with different mesa configuration are obtained under different thermal stress in which the optimized device shows improved performance. Optimized device also shows better stability from measured spectra and calculated thermal resistances. The experimental results prove that our simulation model and optimization is instructive for VCSEL array design.
基金supported by the State Key Program of the National Natural Science Foundation of China(Grant No.61234006)the Open Foundation of the State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201301)the National Science and Technology Major Project of the Ministry of Science and Technology,China(Grant No.2013ZX02305-003)
文摘The effect of the mesa configuration on the reverse breakdown characteristic of a SiC PiN rectifier for high-voltage applications is analyzed in this study.Three geometrical parameters,i.e.,mesa height,mesa angle and mesa bottom corner,are investigated by numerical simulation.The simulation results show that a deep mesa height,a small mesa angle and a smooth mesa bottom(without sub-trench) could contribute to a high breakdown voltage due to a smooth and uniform surface electric field distribution.Moreover,an optimized mesa structure without sub-trench(mesa height of 2.2 μm and mesa angle of 20°) is experimentally demonstrated.A maximum reverse blocking voltage of 4 kV and a forward voltage drop of 3.7 V at 100 A/cm^2 are obtained from the fabricated diode with a 30-μm thick N^- epi-layer,corresponding to 85% of the ideal parallel-plane value.The blocking characteristic as a function of the JTE dose is also discussed for the PiN rectifiers with and without interface charge.
文摘Background: Obesity is associated with higher end-stage renal disease incidence, but associations with earlier forms of kidney disease remain incompletely characterized. Methods: We studied the association of body mass index (BMI), waist circumference (WC), and waist-to-hip ratio (WHR) with rapid kidney function decline and incident chronic kidney disease in 4573 non-diabetic adults with eGFR ≥ 60 ml/min/1.73m2 at baseline from longitudinal Multi-Ethnic Study of Atherosclerosis cohort. Kidney function was estimated by creatinine and cystatin C. Multivariate analysis was adjusted for age, race, baseline eGFR, and hypertension. Results: Mean age was 60 years old, BMI 28 kg/m2, baseline eGFRCr 82 and eGFRCys 95 ml/min/1.73m2. Over 5 years of follow up, 25% experienced rapid decline in renal function by eGFRCr and 22% by eGFRCys. Incident chronic kidney disease (CKD) developed in 3.3% by eGFRCys, 11% by eGFRCr, and 2.4% by both makers. Compared to persons with BMI 25, overweight (BMI 25 - 30) persons had the?lowest risk of rapid decline by eGFRCr (0.84, 0.71 - 0.99). In contrast, higher BMI categories were associated with stepwise higher odds of rapid decline by eGFRCys, but remained significant only when BMI ≥ 35 kg/m2 (1.87, 1.41 - 2.48). Associations of BMI with incident CKD were insignificant after adjustment. Large WC and WHR were associated with increased risk of rapid decline only by eGFRCys, and of incident CKD only when defined by both filtration markers. Conclusions: Obesity may be a risk factor for kidney function decline, but associations vary by filtration marker used.
文摘GaN/InGaN lighting-emitting diodes with different mesa structures are studied. The current-voltage characteristics, light output power, luminous efficiency, and peak wavelength of the GaN/InGaN lighting-emitting diodes with different mesa patterns are compared. It shows that the current-voltage characteristics of the chips with more mesa areas are im- proved greatly by reducing the current crowding. With higher injection current the light output powers of GaN-based LED with more mesa areas are enhanced. And the chips with more P-electrode area have a smaller red shift and a little bit blue shift due to the reduction of the current crowding.
基金Project supported by the National Natural Science Foundation of China(Grant No.61404161)
文摘We present a detailed study of a superjunction (S J) nanoscale partially narrow mesa (PNM) insulated gate bipolar transistor (IGBT) structure. This structure is created by combining the nanoscale PNM structure and the SJ structure together. It demonstrates an ultra-low saturation voltage (Vce(sat)) and low turn-off loss (Eoff) while maintaining other device parameters. Compared with the conventional 1.2 kV trench IGBT, our simulation result shows that the gce(sat) of this structure decreases to 0.94 V, which is close to the theoretical limit of 1.2 kV IGBT, Meanwhile, the fall time decreases from 109.7 ns to 12 ns and the Eoff is down to only 37% of that of the conventional structure. The superior tradeoff characteristic between Vce(sat) and Eoff is presented owing to the nanometer level mesa width and SJ structure. Moreover, the short circuit degeneration phenomenon in the very narrow mesa structure due to the collector-induced barriers lowering (CIBL) effect is not observed in this structure. Thus, enough short circuit ability can be achieved by using wide, floating P-well technique. Based on these structure advantages, the SJ-PNM-IGBT with nanoscale mesa width indicates a potentially superior overall performance towards the IGBT parameter limit.
文摘An optical micro electron mechanical system (MEMS) pressure sensor with a mesa membrane is presented. The operating principle of the MEMS pressure sensor is expatiated by the Fabry-Perot (F-P) interference and the relation between deflection and pressure is analyzed. Both the mechanical model of the mesa structure diaphragm and the signal averaging effect is validated by simulation, which declares that the mesa structure diaphragm is superior to the planar one on the parallelism and can reduce the signal averaging effect. Experimental results demonstrate that the mesa structure sensor has a reasonable linearity and sensitivity.
基金This research is supported by National Natural Science Foundation of China (No.30170764)
文摘The contents of seven different phenolic acids such as gallic acid, catechinic acid, pyrocatechol, caffeic acid, coumaric acid, ferulic acid and benzoic acid in the poplar leaves (Populus Simonii×Populus Pyramibalis c.v and Populus deltoids) suffocated by Methyl jasmonate (MeJA) and Methyl salicylate (MeSA) were monitored for analyzing their functions in interplant communications by using high-pressure liquid chromatography (HPLC).The results showed that the contents of phenolic acids had obviously difference in leaves exposed to either MeSA or MeJA.When P.deltoides leaves exposed to MeJA or MeSA, the level of gallic acid, coumaric acid, caffeic acid, ferulic acid and benzoic acid was increased, gallic acid in leaves treated with MeJA comes to a peak at 24 h while to a peak at 12-d having leaves treated with MeSA.When P.Simonii ×P.Pyramibalis c.v leaves were exposed to MeJA or MeSA, the level of gallic acid, pyrocatechol and ferulic acid was increased; The catechinic acid and benzoic acid had a little drop; The caffeic acid and coumaric acid were undetected in both suffocated and control leaves.This changed pattern indicated that MeJA and MeSA can act as airborne signals to induce defense response of plants.