The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, c...The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003)the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335)+2 种基金the Project(No.9140C140101140C14069)the Innovation Project of GUET Graduate Education(No.YJCXS201529)the National Science&Technology Major Project of China(No.2011ZX02708-003)
文摘The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
