Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant res...Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant respectively. Resistivity beyond 100 Ωcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O2 to TTIP and decreased to 0.2 Ωcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O2-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO2 by O2-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O2-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity.展开更多
ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-r...ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.展开更多
文摘Nb and F co-doped anatase TiO2 layers were deposited by low pressure chemical vapor deposition (LPCVD) at pressure of 3 mtorr using titanium-tetra-iso-propoxide (TTIP), O2 and NbF5 as precursor, oxidant and dopant respectively. Resistivity beyond 100 Ωcm for undoped layer was decreased with increasing supply of the dopant and dependent on the supply ratio of O2 to TTIP and decreased to 0.2 Ωcm by the optimization. X-ray fluorescent spectroscopy showed Nb-content in the layer was decreased with the O2-supply ratio. X-ray photo-spectroscopy indicated that F substituted O-site in TiO2 by O2-supply but carbon-contamination and F missing substitution in the O-site were significantly increased by excess O2-supply. Further, it was suggested that the substituted F played an important role to reduce resistivity without significant contribution of O-vacancies. XRD spectra showed F missing substitution in the O-site degraded the crystallinity.
基金Project supported by the Innovation Foundation of Beijing University of Aeronautics and Astronautics for PhD Graduates, China (Grant No. 292122)the Equipment Research Foundation of China (Grant No. 373974)
文摘ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1：2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm.
