This paper summarizes our research work on optoelectronic devices with nanostructures. It was indi- cated that by manipulating so called ＂general energybands＂ of fundamental particles or quasi-particles, such as pho...This paper summarizes our research work on optoelectronic devices with nanostructures. It was indi- cated that by manipulating so called ＂general energybands＂ of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton （SPP）, novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact （8 μm -17.6μm） footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hereto optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption （TSPA）, and realized diffraction-limit-overcoming photolithography with resolution of-1/11 of the exposure wavelength.展开更多
基金This work was supported by the National Basic Research Program of China （No. 2013CB328704 and 2013CBA01704）, the National Natural Science Foundation of China （Grant No. 61307068）.
文摘This paper summarizes our research work on optoelectronic devices with nanostructures. It was indi- cated that by manipulating so called ＂general energybands＂ of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton （SPP）, novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact （8 μm -17.6μm） footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hereto optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption （TSPA）, and realized diffraction-limit-overcoming photolithography with resolution of-1/11 of the exposure wavelength.
