采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很...采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很好的仿真结果;最后设计出电路制版图并制作了经济实用的微带开关,经过实验测量达到了技术指标要求.展开更多
1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performanc...1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performances have been obtained, and the transconductance, maximum saturation drain current density, threshold voltage, current cut-off frequency,and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502 (503) mS/mm, 382(530)mA/mm,0.1( - 0.5)V,13.4(14.8)GHz,and 17.0(17.5)GHz,respectively. DC-10GHz single-pole double-throw (SPDT) switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs. Insertion loss,isolation,input,and out- put return losses of SPDT chips were better than 2.93,23.34,and 20dB.展开更多
采用0.18μm CMOS SOI工艺设计制作了一种集成控制模块的微波单刀双掷开关。开关控制模块包含了低压差线性稳压器和负电压电荷泵,低压差线性稳压器将外部供电高电压转换为开关电路低电压,负电压电荷泵产生一个负压,用以改善开关的性能...采用0.18μm CMOS SOI工艺设计制作了一种集成控制模块的微波单刀双掷开关。开关控制模块包含了低压差线性稳压器和负电压电荷泵,低压差线性稳压器将外部供电高电压转换为开关电路低电压,负电压电荷泵产生一个负压,用以改善开关的性能。制作的SOI开关具有良好的性能,芯片测试表明,开关导通状态下从DC到9 GHz范围内插损小于1.7 d B,关断状态下隔离度大于28.5 d B,回波损耗小于-15 d B,开关开启时间为1.06μs。芯片的尺寸为0.87 mm×1.08 mm。展开更多
文摘采用多个P IN管设计并制作了一种串/并联结构的宽带高隔离度微带单刀双掷(s ing le po le doub le throw,SPDT)开关.首先建立了所用型号的P IN管开路、短路的等效电路模型;然后借助于CAD软件Serenade进行了电路仿真和参数优化,得到了很好的仿真结果;最后设计出电路制版图并制作了经济实用的微带开关,经过实验测量达到了技术指标要求.
文摘1.0μm gate-length GaAs-based MHEMTs have been fabricated by MBE epitaxial material and contact-mode lithography technology. Pt/Ti/Pt/Au and Ti/Pt/Au were evaporated to form gate metals. Excellent DC and RF performances have been obtained, and the transconductance, maximum saturation drain current density, threshold voltage, current cut-off frequency,and maximum oscillation frequency of Pt/Ti/Pt/Au and Ti/Pt/Au MHEMTs were 502 (503) mS/mm, 382(530)mA/mm,0.1( - 0.5)V,13.4(14.8)GHz,and 17.0(17.5)GHz,respectively. DC-10GHz single-pole double-throw (SPDT) switch MMICs have been designed and fabricated by Ti/Pt/Au MHEMTs. Insertion loss,isolation,input,and out- put return losses of SPDT chips were better than 2.93,23.34,and 20dB.
文摘采用0.18μm CMOS SOI工艺设计制作了一种集成控制模块的微波单刀双掷开关。开关控制模块包含了低压差线性稳压器和负电压电荷泵,低压差线性稳压器将外部供电高电压转换为开关电路低电压,负电压电荷泵产生一个负压,用以改善开关的性能。制作的SOI开关具有良好的性能,芯片测试表明,开关导通状态下从DC到9 GHz范围内插损小于1.7 d B,关断状态下隔离度大于28.5 d B,回波损耗小于-15 d B,开关开启时间为1.06μs。芯片的尺寸为0.87 mm×1.08 mm。