High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic targe...High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.展开更多
[Zn（phen）3]·ZTO-6H2O（1） and [Cu（phen）3]·ZTO·6H2O（2） were synthesized by the reaction of ZnCNO3）2·6H2O/Cu（NO3）2·3H2O with 4,4-azo-1H-1,2,4-triazol-5-one（ZTO） and 1,10-phenanthrolin...[Zn（phen）3]·ZTO-6H2O（1） and [Cu（phen）3]·ZTO·6H2O（2） were synthesized by the reaction of ZnCNO3）2·6H2O/Cu（NO3）2·3H2O with 4,4-azo-1H-1,2,4-triazol-5-one（ZTO） and 1,10-phenanthroline（phen）. The two compounds were characterized by elemental analysis and IR spectrum analysis, respectively. Compound 1 was also characterized by single crystal X-ray diffraction analysis. For compound l, the coordination geometry around the Zn^2＋ is a distorted octahedron, with the bite angles of 76.7（3）°-77.6（4）° for all three phen ligands. Moreover, the thermal behaviors and thermal decomposition kinetics were studied and analyzed. Besides, thermal stability and safety parameters（TsADT, Tb） are 164.7 and 166.4℃ for compound 1, and 149.6 and 150.8℃ for compound 2, respectively.展开更多
The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, a...The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.展开更多
Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ...Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.展开更多
Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization,...Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization, microstructure and optical properties were investigated by scanning electronic microscope（SEM）,X-ray diffraction（XRD） and ultraviolet-visible（UV-Vis）spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11：18,the intensity of Zn2SnO4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7：18.展开更多
基金Funded by the Program for Changjiang Scholars and Innovative Research Team in University, Ministry of Education, China (No.IRT0547)
文摘High transparent and conductive thin films of zinc doped tin oxide （ZTO） were deposited on quartz substrates by the radio-frequency （RF） magnetron sputtering using a 12 wt% ZnO doped with 88 wt% SnO2 ceramic target.The effect of substrate temperature on the structural,electrical and optical performances of ZTO films has been studied.X-ray diffraction （XRD） results show that ZTO films possess tetragonal rutile structure with the preferred orientation of （101）.The surface morphology and roughness of the films was investigated by the atomic force microscope （AFM）.The electrical characteristic （including carrier concentration,Hall mobility and resistivity） and optical transmittance were studied by the Hall tester and UV- VIS,respectively.The highest carrier concentration of -1.144×1020 cm-3 and the Hall mobility of 7.018 cm2（V ·sec）-1 for the film with an average transmittance of about 80.0% in the visible region and the lowest resistivity of 1.116×10-2 Ω·cm were obtained when the ZTO films deposited at 250 oC.
文摘[Zn（phen）3]·ZTO-6H2O（1） and [Cu（phen）3]·ZTO·6H2O（2） were synthesized by the reaction of ZnCNO3）2·6H2O/Cu（NO3）2·3H2O with 4,4-azo-1H-1,2,4-triazol-5-one（ZTO） and 1,10-phenanthroline（phen）. The two compounds were characterized by elemental analysis and IR spectrum analysis, respectively. Compound 1 was also characterized by single crystal X-ray diffraction analysis. For compound l, the coordination geometry around the Zn^2＋ is a distorted octahedron, with the bite angles of 76.7（3）°-77.6（4）° for all three phen ligands. Moreover, the thermal behaviors and thermal decomposition kinetics were studied and analyzed. Besides, thermal stability and safety parameters（TsADT, Tb） are 164.7 and 166.4℃ for compound 1, and 149.6 and 150.8℃ for compound 2, respectively.
基金supported by the National Natural Science Foundation of China(Grant No.21161160447)
文摘The full solution-processed oxide thin-film-transistors(TFTs) have the advantages of transparency, ease of large-area fabrication, and low cost, offering great potential applications in switching and driving fields, and attracting extensive research interest. However, the performance of the solution-processed TFTs is generally lower than that of the vacuum-deposited ones. In this article, the full-solution processed TFTs with zinc-tin-oxide(ZTO) semiconductor and aluminium(Al_2O_3) dielectrics were fabricated, and their mobilities in the saturation region are high. Besides, the effect of the Al_2O_3 dielectrics' preparation technology on ZTO TFTs' performance was studied. Comparing the ZTO TFTs using the spin-coated Al_2O_3 dielectrics of 1–4 layers, the ZTO TFT with 3-layer Al_2O_3 dielectrics achieved the optimal performance as its field-effect carrier mobility in the saturation region is 112 cm^2/V s, its threshold voltage is 2.4 V, and its on-to-off current ratio is 2.8×105. This is also the highest reported carrier mobility of the solution-processed ZTO TFTs.
基金supported by the National Natural Science Foundation of China (50990060)
文摘Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (XRD) and UV-vis spectrophotometry.The conductivity of ZTO is about 9.8×10-9 S/cm,as estimated from the current-voltage (I-V) curve.The effect of the thermal treatment process on the morphology of ZTO thin films is also discussed.
基金financially supported by the National Natural Science Foundation of China(No.51342006)
文摘Zinc tin oxide（ZTO） thin films, with zinc acetate and tributyltin chloride as raw materials, were deposited on glass substrates by the method of metal organic chemical vapor deposition（MOCVD）. The crystallization, microstructure and optical properties were investigated by scanning electronic microscope（SEM）,X-ray diffraction（XRD） and ultraviolet-visible（UV-Vis）spectrophotometer. The results show that with the increase in Sn/Zn ratio, the crystal changes from wurtzite to rutile phase. When the ratio reaches 11：18,the intensity of Zn2SnO4 peaks appears to be the strongest and the optical band gap is about 3.27 eV. Calculated by the envelope method, the thickness of the ZTO thin films is 713.24 nm.Measured by UV-Vis spectrophotometer, the transmittance of the ZTO thin films reaches up to 80% in the wavelength range of 400-1000 nm when the Sn/Zn ratio is 7：18.
