A kind of novel ceria electrolyte was examined.Various trivalent oxides were added as co-dopants to Ce 0.8Gd 0.2O 1.9,and their effects on the conductivity of ceria electrolyte were discussed.It has been foun...A kind of novel ceria electrolyte was examined.Various trivalent oxides were added as co-dopants to Ce 0.8Gd 0.2O 1.9,and their effects on the conductivity of ceria electrolyte were discussed.It has been found that the co-dopant of trivalent oxides of Sm,Nd,La and Y improves the ionic conductivity notably.Furthermore,the fine original powders,co-dopant and higher sintering temperature may hasten the sintering.展开更多
Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limit...Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limited. The electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) is the most utilized P-dopant;however, it has high volatility and a poor sticking coefficient, which makes it difficult to control doping levels and prevent vacuum system contamination. A design concept for P-type molecular dopants based on the TCNQ core which are substituted to improve processing properties without sacrificing the electronic properties necessary is presented. The correlation between the lowest unoccupied molecular orbital (LUMO) energy and the position of substitution as well as the choice of linker is evaluated. The position of substitution as well as the choice of linker has a significant effect on the electronic properties. However, the geometry of the substituted molecules was not significantly distorted from that of the parent F4-TCNQ, and the electron density was delocalized on the TCNQ core. We also put forward four possible molecular dopants with suitable energy levels.展开更多
过渡金属硫族化合物(transition metal dichalcogenides,TMDs)因其显著的光学和电学特性而受到广泛的关注。其块状材料为间接带隙半导体,而单层材料则具有直接带隙半导体的特性。对于单层半导体材料,其拥有原子级别的厚度,容易引入外界...过渡金属硫族化合物(transition metal dichalcogenides,TMDs)因其显著的光学和电学特性而受到广泛的关注。其块状材料为间接带隙半导体,而单层材料则具有直接带隙半导体的特性。对于单层半导体材料,其拥有原子级别的厚度,容易引入外界环境掺杂,从而影响其发光特性。本文通过化学气相沉积法合成高质量,大面积的单层及少数层N-型二硫化钨(WS_(2))材料。使用拉曼进行表征,通过其特征声子振动模式所对应的频率差,来确定材料层数。在此基础上,对比了材料中心和边缘的光致发光(Photoluminescence,PL)。相比于中心位置,边缘位置的荧光强度更强,且峰位也发生红移。这是由于生长过程中造成的缺陷密度不同。基于此,使用掺杂剂对材料进行处理,来改变其缺陷密度。处理后发现,边缘和中心位置峰位均发生蓝移,强度减弱,同时中性激子发射占据了主导。该结果也进一步证实了本文生长的单层WS_(2)为N-型半导体材料。展开更多
文摘A kind of novel ceria electrolyte was examined.Various trivalent oxides were added as co-dopants to Ce 0.8Gd 0.2O 1.9,and their effects on the conductivity of ceria electrolyte were discussed.It has been found that the co-dopant of trivalent oxides of Sm,Nd,La and Y improves the ionic conductivity notably.Furthermore,the fine original powders,co-dopant and higher sintering temperature may hasten the sintering.
文摘Conductivity dopants with processing properties suitable for industrial applications are of importance to the organic electronics field. However, the number of commercially available organic molecular dopants is limited. The electron acceptor 2,3,5,6-tetrafluoro-7,7,8,8,-tetracyanoquinodimethane (F4-TCNQ) is the most utilized P-dopant;however, it has high volatility and a poor sticking coefficient, which makes it difficult to control doping levels and prevent vacuum system contamination. A design concept for P-type molecular dopants based on the TCNQ core which are substituted to improve processing properties without sacrificing the electronic properties necessary is presented. The correlation between the lowest unoccupied molecular orbital (LUMO) energy and the position of substitution as well as the choice of linker is evaluated. The position of substitution as well as the choice of linker has a significant effect on the electronic properties. However, the geometry of the substituted molecules was not significantly distorted from that of the parent F4-TCNQ, and the electron density was delocalized on the TCNQ core. We also put forward four possible molecular dopants with suitable energy levels.
文摘过渡金属硫族化合物(transition metal dichalcogenides,TMDs)因其显著的光学和电学特性而受到广泛的关注。其块状材料为间接带隙半导体,而单层材料则具有直接带隙半导体的特性。对于单层半导体材料,其拥有原子级别的厚度,容易引入外界环境掺杂,从而影响其发光特性。本文通过化学气相沉积法合成高质量,大面积的单层及少数层N-型二硫化钨(WS_(2))材料。使用拉曼进行表征,通过其特征声子振动模式所对应的频率差,来确定材料层数。在此基础上,对比了材料中心和边缘的光致发光(Photoluminescence,PL)。相比于中心位置,边缘位置的荧光强度更强,且峰位也发生红移。这是由于生长过程中造成的缺陷密度不同。基于此,使用掺杂剂对材料进行处理,来改变其缺陷密度。处理后发现,边缘和中心位置峰位均发生蓝移,强度减弱,同时中性激子发射占据了主导。该结果也进一步证实了本文生长的单层WS_(2)为N-型半导体材料。
