从“-gate”看全球化时代英汉媒体新词的特色

在全球化环境下,五花八门的"XX门"事件层出不穷,令人眼花缭乱。本文拟从"XX门"词族的兴起与发展入手,结合全球化时代大背景分析英汉媒体新词的特色,即能产性强,外来词互相兼容、形式简洁等特征,旨在于揭示全球化时代对英汉媒体新词发展趋势的积极影响。

支持Stage-Gate技术的一种设计管理方法研究

本文提出了将DSM矩阵和Stage -Gate技术相结合 ,应用于产品开发中的一种新方法。Stage -Gate方法能提升产品的开发成功率和缩短上市时间 ,将DSM技术应用于Stage -Gate中能对产品的设计结构提供一个清晰的认识并从信息依赖的观点把设计过程分解为各个阶段 ,有效地支持了Stage -Gate技术的发挥。

“-gate”、“～门”的缀化对比与翻译

随"水门事件"的曝光,"-gate"与"～门"在媒体迅速传播、使用。从语言学角度深入地分析两个新兴附缀形态性质与属性、语义特点与语义扩展、句法特点、形成与变异的动因机制等,通过两者的不同翻译,旨在强化对"-gate"与"～门"的认识,指导语言实践。

“X-gate”到“X-门”汉化及比较研究

汉语中的"X-门"来源于英语的"X-gate"。从形态、语义、组合能力、造句功能以及"-gate"和"-门"的角色角度对"X-gate"和"X-门"进行了深入的对比分析,得出二者之间的共性是:①"X-gate"和"X-门"中"X"的构成都可以是名词成分且数量很多,同时还都可以是动词;②在语义上均用来表示消极意义;③组合能力相同,造句功能相似。二者之间的差异是:①"X-门"中的"X"可以是形容词,但"X-gate"中却不能。②汉语"-门"比英语"-gate"使用范围更广;③"-gate"已成为真正的构词后缀,而"-门"只是类词缀。

文化在英语新词构成中的表现──试析-gate及其合成词语

一方面，科学技术的发展使英语新词大量涌现．另一方面，语言与文化相关性的讨论又给传统词语研究注入了新的活力。“水门事件”（Watergate）后，结合成分-gate派生出许多新词，专指政界、要人丑闻，如：Billygate、Debategate、Irangate、Koreagate、Hollywoodgate、Muldergate、Quakergate等等。同时，Watergate一词从专有名词换称为指“丑闻”的普通名词。普通化后的Watergate，通过双重转化机制，不仅可作动词，有“卷入”、“偷窃”之意，而且还可同英语后缀结合，派生出不同形态的词语，如Water－gateana、Watergater、Watergatese等。

Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果研究

目的通过临床随机对照试验的方法评价Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉有效性和安全性。方法使用左右半口设计,32例患者的左右下颌阻生第三磨牙分别随机采用Gow-Gates法和传统注射法进行下牙槽神经阻滞麻醉,并拔除下颌阻生第三磨牙,记录麻醉效果及不良事件。结果所有患者均完成研究。Gow-Gates法的麻醉成功率为96.9%,传统注射法的麻醉成功率为90.6%,二者的麻醉成功率无统计学差异(P=0.317)。在麻醉程度上,Gow-Gates法麻醉程度为A和B级的比率为96.9%,明显好于传统注射法的78.1%(P=0.034)。Gow-Gates法的回抽出血率明显低于传统注射法(P=0.025),2种注射方法均未出现血肿。结论 Gow-Gates法下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的麻醉效果好且较为安全,可以作为传统注射法的有效补充。

Gate-to-Gate模式下航班到达的综合调度

Gate-to-Gate是空中交通管理的未来趋势之一,研究了Gate-to-Gate模式下的航班到达问题,对航班到达的空中降落与地面滑行进行综合调度,建立了地空综合调度的简化数学模型,实现了航班到达从区调阶段到航站楼的关键点路径规划和时间安排,并对北京终端区及首都机场地面滑行过程进行了算例分析。针对实际应用规模大、求解时间长的问题,利用模型的特殊性制定了先松弛后固定分支求解的两步法求解算法,实现了在5分钟内能求得相对误差小于5.3%的近优解。

Decreased expression of hyperpolarisation-activated cyclic nucleotide-gated channel 3 in Hirschsprung's disease

AIM: To determine if hyperpolarisation-activated nucleotide-gated(HCN) channels exist in human colon, and to investigate the expression of HCN channels in Hirschsprung's disease.METHODS:We investigated HCN1,HCN2,HCN3 and HCN4 protein expression in pull-through specimens from patients with Hirschsprung’s disease(HSCR,n=10)using the proximal-most ganglionic segment and distalmost aganglionic segment,as well as in healthy control specimens obtained at the time of sigmoid colostomy closure in children who had undergone anorectoplasty for imperforate anus(n=10).Fluorescent immunohistochemistry was performed to assess protein distribution,which was then visualized using confocal microscopy.RESULTS:No HCN1 channel expression was observed in any of the tissues studied.Both HCN2 and HCN4proteins were found to be equally expressed in the aganglionic and ganglionic bowel in HSCR and controls.HCN3 channel expression was found to be markedly decreased in the aganglionic colon vs ganglionic colon and controls.HCN2-4 channels were seen to be expressed within neurons of the myenteric and submucosal plexus of the ganglionic bowel and normal controls,and also co-localised to interstitial cells of Cajal in all tissues studied.CONCLUSION:We demonstrate HCN channel expression in human colon for the first time.Reduced HCN3expression in aganglionic bowel suggests its potential role in HSCR pathophysiology.

Activin A maintains cerebral cortex neuronal survival and increases voltage-gated Na^+ neuronal current

Activin A, which was first described in 1986, has been shown to maintain hippocampal neuronal survival. Activin A increases intracellular free Ca2＋ via L-type Ca2＋ channels. Our previous study showed that activin A promotes neurite growth of dorsal root ganglia in embryonic chickens and inhibits nitric oxide secretion. The present study demonstrated for the first time that activin A could maintain cerebral cortex neuronal survival in vitro for a long period, and that activin A was shown to increase voltage-gated Na＋ current （/Na） in Neuro-2a cells, which was recorded by patch clamp technique. The present study revealed a novel mechanism for activin A, as well as the influence of activin A on neurons by regulating expressions of vasoactive intestine peptide and inducible nitric oxide synthase.

Functional Expression of Voltage-Gated Sodium Channels Nav1.5 in Human Breast Caner Cell Line MDA-MB-231

Voltage-gated sodium channels （VGSCs） are known to be involved in the initiation and progression of many malignancies, and the different subtypes of VGSCs play important roles in the metastasis cascade of many tumors. This study investigated the functional expression of Nav1.5 and its effect on invasion behavior of human breast cancer cell line MDA-MB-231. The mRNA and protein expression of Nav1.5 was detected by real time PCR, Western Blot and immunofluorescence. The effects of Nav1.5 on cell proliferation, migration and invasion were respectively assessed by MTT and Transwell. The effects of Nav1.5 on the secretion of matrix metalloproteases （MMPs） by MDA-MB-231 were analyzed by RT-PCR. The over-expressed Nav 1.5 was present on the membrane of MDA-MB-231 cells. The invasion ability in vitro and the MMP-9 mRNA expression were respectively decreased to （47.82±0.53）% and （43.97±0.64）% （P〈0.05） respectively in MDA-MB-23 t cells treated with VGSCs specific inhibitor tetrodotoxin （TTX） by blocking Navl.5 activity. It was concluded that Navl.5 functional expression potentiated the invasive behavior of human breast cancer cell line MDA-MB-231 by increasing the secretion of MMP-9.

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.

改良Gow-Gates下牙槽神经阻滞麻醉在下颌阻生第三磨牙拔除术中的应用

目的:探讨一种微创高效的下牙槽神经阻滞麻醉方法。方法:将206例门诊拔除下颌阻生第三磨牙患者随机分为2组,实验组105例采用改良Gow-Gates法,对照组101例采用传统口内注射法(Halstead法)。记录麻醉成功率、麻醉效果和并发症,采用SPSS17.0软件包对数据进行统计学分析。结果:改良Gow-Gates法麻醉成功率为97.15%,Halstead法为89.10%,2组间显著差异(P=0.038)。改良Gow-Gates法在麻醉效果A、B级比率为90.48%,Halstead法为87.13%,2组间无显著性差异(P=0.446)。改良Gow-Gates法的并发症显著少于Halstead法(P=0.014)。结论:GowGates下牙槽神经阻滞麻醉是一种微创高效的麻醉方法 。

A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region

A continuous yet analytic channel potential solution is proposed for doped symmetric double-gate （DG） MOSFETs from the accumulation to the strong-inversion region. Analytical channel potential relationship is derived from the complete 1-D Poisson equation physically, and the channel potential solution of the DG MOSFET is obtained analytically. The extensive comparisons between the presented solution and the numerical simulation illustrate that the solution is not only accurate and continuous in the whole operation regime of DG MOSFETs, but also valid to wide doping concentration and various geometrical sizes, without employing any fitting parameter.

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, the measured drain induced barrier lowering （DIBL） was 66mV/V for n-MOSFETs and 82mV/V for p-MOSFETs. The substrate current of a groove-gate n-MOSFET was 150 times less than that of a conventional planar n-MOSFET, These results demonstrate that groove-gate MOSFETs have excellent capabilities in suppressing short-channel effects. It is worth emphasizing that our groove-gate MOSFET devices are fabricated by using a simple process flow, with the potential of fabricating devices in the sub-100nm range.

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Self-aligned-gate heterostructure field-effect transistor（HFET） is fabricated using a wet-etching method.Titanium nitride（TiN） is one kind of thermal stable material which can be used as the gate electrode.A Ti/Au cap layer is fixed on the gate and acts as an etching mask.Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 ℃.After treating the ohmic region with an inductively coupled plasma（ICP） method,an Al layer is sputtered as an ohmic electrode.The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 ℃ in N2 ambient for 1 min.The TiN gate leakage current is only 10^-8 A after the low-temperature ohmic process.The access region length of the self-aligned-gate（SAG） HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET.The output current density and transconductance of the device which has the same gate length and width are also increased.

Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect

A non-depletion floating layer silicon-on-insulator （NFL SOI） lateral double-diffused metal–oxide–semiconductor （LDMOS） is proposed and the NFL-assisted modulated field （NFLAMF） principle is investigated in this paper. Based on this principle, the floating layer can pin the potential for modulating bulk field. In particular, the accumulated high concentration of holes at the bottom of the NFL can efficiently shield the electric field of the SOI layer and enhance the dielectric field in the buried oxide layer （BOX）. At variation of back-gate bias, the shielding charges of NFL can also eliminate back-gate effects. The simulated results indicate that the breakdown voltage （BV） is increased from 315 V to 558 V compared to the conventional reduced surface field （RESURF） SOI （CSOI） LDMOS, yielding a 77% improvement. Furthermore, due to the field shielding effect of the NFL, the device can maintain the same breakdown voltage of 558 V with a thinner BOX to resolve the thermal problem in an SOI device.

Neuroprotective effect of interleukin-6 regulation of voltage-gated Na^+ channels of cortical neurons is time-and dose-dependent

Interleukin-6 has been shown to be involved in nerve injury and nerve regeneration, but the effects of long-term administration of high concentrations of interleukin-6 on neurons in the central nervous system is poorly understood. This study investigated the effects of 24 hour expo-sure of interleukin-6 on cortical neurons at various concentrations （0.1, 1, 5 and 10 ng/mL） and the effects of 10 ng/mL interleukin-6 exposure to cortical neurons for various durations （2, 4, 8, 24 and 48 hours） by studying voltage-gated Na＋ channels using a patch-clamp technique. Volt-age-clamp recording results demonstrated that interleukin-6 suppressed Na＋ currents through its receptor in a time- and dose-dependent manner, but did not alter voltage-dependent activation and inactivation. Current-clamp recording results were consistent with voltage-clamp recording results. Interleukin-6 reduced the action potential amplitude of cortical neurons, but did not change the action potential threshold. The regulation of voltage-gated Na＋channels in rat corti-cal neurons by interleukin-6 is time- and dose-dependent.

Determination AHP Analysis of the Virtual Stage-Gate Process in the Global Scale Automotive Design

In this study, it is aimed to determine the ranking importance levels of the stages to be taken into consideration for new product development on a global scale in the automotive design process. New product design activity and stage-gate process differences between local automotive firms (serial production factory and stage-gate department in Turkey) and global automotive companies (serial production factory and stage-gate department in Turkey) are examined comparatively in the research area. In the automotive industry, which has been developing for a century, the question of how the local company products operating in the last sixty years have not been able to spread globally or how to develop global products is the background question of the research. For this purpose, one on one interviews were held with the managers of 3 national and 3 international automotive companies, who worked in the same region and who had previously designed a new vehicle, with design and product development departments.?According to?the data obtained by the AHP (Analytic Hierarchy Process) in the automotive design process, the importance of the criteria that should be taken into account for global product development has revealed. According to the results of the study, it was found that design validation stages were the most important globalization criterion in automotive design process as a new study area. In the comprehensive survey of the study, no other publication has been encountered to measure or evaluate the stages in the automotive design and new product development process in other sectors, including the vehicle industry. As in every industry sector, in the automotive industry, with the new product companies provide market development or competitive advantage. The new product is the life channel of a company and in the realization of this new vehicle;the disciplines of the automotive industry are formed by a hundred years of experience.

Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap

The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor （DG ASiNR FET） are thoroughly investigated by using a ballistic quantum transport model based on non-equilibrium Green＇s function （NEGF） approach self-consistently coupled with a three-dimensional （3D） Poisson equation. We evaluate the influence of variation in uniaxial tensile strain, ribbon temperature and oxide thickness on the on-off current ratio, subthreshold swing, transconductance and the delay time of a 12-nm-length ultranarrow ASiNR FET. A novel two-parameter strain mag- nitude and temperature-dependent model is presented for designing an optimized device possessing balanced amelioration of all the electrical parameters. We demonstrate that employing HfO2 as the gate insulator can be a favorable choice and simultaneous use of it with proper combination of temperature and strain magnitude can achieve better device performance. Furthermore, a general model power （GMP） is derived which explicitly provides the electron effective mass as a function of the bandgap of a hydrogen passivated ASiNR under strain.

Chlorogenic acid alters the voltage-gated potassium channel currents of trigeminal ganglion neurons

Chlorogenic acid（5-caffeoylquinic acid, CGA） is a phenolic compound that is found ubiquitously in plants, fruits and vegetables and is formed via the esterification of caffeic acid and quinic acid. In addition to its notable biological functions against cardiovascular diseases, type-2 diabetes and inflammatory conditions, CGA was recently hypothesized to be an alternative for the treatment of neurological diseases such as Alzheimer＇s disease and neuropathic pain disorders. However, its mechanism of action is unclear.Voltage-gated potassium channel（Kv） is a crucial factor in the electro-physiological processes of sensory neurons. Kv has also been identified as a potential therapeutic target for inflammation and neuropathic pain disorders. In this study, we analysed the effects of CGA on the two main subtypes of Kv in trigeminal ganglion neurons, namely, the IK,Aand IK,Vchannels. Trigeminal ganglion（TRG）neurons were acutely disassociated from the rat TRG, and two different doses of CGA（0.2 and 1 mmol·L21） were applied to the cells.Whole-cell patch-clamp recordings were performed to observe alterations in the activation and inactivation properties of the IK,Aand IK,Vchannels. The results demonstrated that 0.2 mmol·L21CGA decreased the peak current density of IK,A. Both 0.2 mmol·L21and1 mmol·L21CGA also caused a significant reduction in the activation and inactivation thresholds of IK,Aand IK,V. CGA exhibited a strong effect on the activation and inactivation velocities of IK,Aand IK,V. These findings provide novel evidence explaining the biological effects of CGA, especially regarding its neurological effects.