The microstructures of as-extruded and stabilizing heat-treated Zn-10Al-2Cu-0.02Ti alloys were observed by scanning electron microscopy,transmission electron microscopy,electron probe microanalysis and X-ray diffracti...The microstructures of as-extruded and stabilizing heat-treated Zn-10Al-2Cu-0.02Ti alloys were observed by scanning electron microscopy,transmission electron microscopy,electron probe microanalysis and X-ray diffraction analysis techniques.The change in structure after heat treatment and its effects on room temperature creep behavior were investigated by creep experiments at constant stress and slow strain rate tensile tests.The results show that after stabilizing heat treatment（（350℃,30 min,water-cooling）＋（100℃,12 h,air-cooling））,the amount of α＋η lamellar structure decreases,while the amount of cellular and granular structure increases.The heat-treated Zn-10Al-2Cu-0.02Ti alloy exhibits better creep resistance than the as-extruded alloy,and the rate of steady state creep decreases by 96.9% after stabilizing heat treatment.展开更多
Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 ...Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.展开更多
采用共沉淀法,制备了具有良好电化学性能的层状L iN i0.78Co0.2Zn0.02O2正极材料,探讨材料的物理性质对其电化学性能的影响.结果表明:电极片涂膜的厚度对其放电比容量及循环性能有很大影响;粒径的大小对首次放比容量的影响不大,但对其...采用共沉淀法,制备了具有良好电化学性能的层状L iN i0.78Co0.2Zn0.02O2正极材料,探讨材料的物理性质对其电化学性能的影响.结果表明:电极片涂膜的厚度对其放电比容量及循环性能有很大影响;粒径的大小对首次放比容量的影响不大,但对其长期循环性能的影响较大.材料的相变是放电容量衰减的主要因素之一,通过掺杂改性、优化制备工艺条件、控制材料的物理性质,有利于抑制相变,提高材料的电化学性能.展开更多
基金Project(2009BAE71B00) supported by the National Key Technology R&D Program during the Eleventh Five-Year Plan Period
文摘The microstructures of as-extruded and stabilizing heat-treated Zn-10Al-2Cu-0.02Ti alloys were observed by scanning electron microscopy,transmission electron microscopy,electron probe microanalysis and X-ray diffraction analysis techniques.The change in structure after heat treatment and its effects on room temperature creep behavior were investigated by creep experiments at constant stress and slow strain rate tensile tests.The results show that after stabilizing heat treatment（（350℃,30 min,water-cooling）＋（100℃,12 h,air-cooling））,the amount of α＋η lamellar structure decreases,while the amount of cellular and granular structure increases.The heat-treated Zn-10Al-2Cu-0.02Ti alloy exhibits better creep resistance than the as-extruded alloy,and the rate of steady state creep decreases by 96.9% after stabilizing heat treatment.
基金Projects(5110205551462005)supported by the National Natural Science Foundation of China
文摘Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.
文摘采用共沉淀法,制备了具有良好电化学性能的层状L iN i0.78Co0.2Zn0.02O2正极材料,探讨材料的物理性质对其电化学性能的影响.结果表明:电极片涂膜的厚度对其放电比容量及循环性能有很大影响;粒径的大小对首次放比容量的影响不大,但对其长期循环性能的影响较大.材料的相变是放电容量衰减的主要因素之一,通过掺杂改性、优化制备工艺条件、控制材料的物理性质,有利于抑制相变,提高材料的电化学性能.
