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0.18μm Low-k SiOF Integration and Reliability
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作者 李伟 K.L.Young 《微电子技术》 2002年第5期1-5,共5页
The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k... The requirement of reduced RC delay and cross-talk for multilevel interconnect ULSI applications has enthusiastically driven process development for seeking suitable low dielectric constant materials with sufficient k value. The replacement of HDP FSG(k-3.5-3.6) with conventional SiO2 as a manufacturable intermetal dielectric layer (IMD) has achieved 0.18μm ULSI interconnect technology. The electrical test result, via resislance as well as multilevel CMOS transistor characteristics (such as plasma damage, device degradation, hot carrier, etc.) are basically compatible to those conventional oxide as IMD. Assessment of metal line-to-line capacitance reduction using comb capacitors yields values of reduction range 10%-14% comparing FSG to convention oxide. The effectiveness of low-k FSG in circuit performance is also demonstrated. Comparisons of ring-oscillator speed performance for metal runners with various width and space show speed improvement approximately 10% for the FSG. Impact of FSG on reliability is evaluated and results show manufacturing compatibility to conventional SiO2. 展开更多
关键词 硅氧氟集成 超大规模集成电路 可靠性 0.18μm低值siof集成 二氧化硅
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集成CMOS限幅放大器的研究 被引量:1
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作者 李富华 王长清 伍博 《河南师范大学学报(自然科学版)》 CAS CSCD 2004年第4期37-40,共4页
提出了一种具有低通网络的高速放大器拓扑,基于增益带宽约束条件和低通网络的特性的研究对高速放大器进行了优化设计.此外,基于中芯国际集成电路公司提供的0.18μm器件模型、共面线的分布参数模型,文中分别研究了共面线的频变分布参数... 提出了一种具有低通网络的高速放大器拓扑,基于增益带宽约束条件和低通网络的特性的研究对高速放大器进行了优化设计.此外,基于中芯国际集成电路公司提供的0.18μm器件模型、共面线的分布参数模型,文中分别研究了共面线的频变分布参数、负载电阻以及n沟道MOSFET的栅宽对放大器增益、带宽的影响,为高速限幅放大器的优化设计提供了理论指导和设计依据. 展开更多
关键词 高速放大器 0.18μm CmOS工艺 通网络 CmOS集成电路
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