La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synt...La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.展开更多
We have performed a multi-wavelength study toward a quasi-sinusoidal filament(CFG028.68–0.28). A new large-scale ^12CO J = 3-2 map was obtained from the China-Cologne Observation for Sub Millimeter Astronomy(CCOSMA) ...We have performed a multi-wavelength study toward a quasi-sinusoidal filament(CFG028.68–0.28). A new large-scale ^12CO J = 3-2 map was obtained from the China-Cologne Observation for Sub Millimeter Astronomy(CCOSMA) 3m radio telescope. Based on the ATLASGAL catalog, we have identified 27 dust clumps in the filament. Through the relationship between the mass and radius of these clumps, 67% of these clumps are dense and massive enough to potentially form massive stars. The obtained CFE is ~11% in the filament. The filament has a linear mass density of ~305 M⊙pc^-1, which is smaller than its critical mass to length ratio. This suggests that the external pressure from the neighboring H Ⅱ regions may help prevent the filament from dispersing under the effects of turbulence. Comparing the energy injection from outflows and H Ⅱ regions in the filament, the ionization feedback from the H Ⅱ regions can help maintain the observed turbulence.展开更多
采用双洛伦兹模型和有效介质近似(Efficient Medium Approximation,EMA)色散模型对退火的Mn_(1.95)Co_(0.77)Ni_(0.28)O_(4)薄膜在近红外和中红外波段的椭偏数据进行了拟合。通过比较直流电压下测试的电导率与低频下计算的电导率(ω→0...采用双洛伦兹模型和有效介质近似(Efficient Medium Approximation,EMA)色散模型对退火的Mn_(1.95)Co_(0.77)Ni_(0.28)O_(4)薄膜在近红外和中红外波段的椭偏数据进行了拟合。通过比较直流电压下测试的电导率与低频下计算的电导率(ω→0)发现,A谐振子主要产生传导电流,B谐振子主要产生位移电流。对于Mn_(1.95)Co_(0.77)Ni_(0.28)O_(4)薄膜,随着退火温度的升高,晶格共振吸收逐渐被电子共振吸收所取代。退火样品的折射率n和消光系数k均由退火过程决定。展开更多
We report on the properties of strong pulses from PSR B0656＋14 by analyzing the data obtained using the Urumqi 25-m radio telescope at 1540 MHz from August 2007 to September 2010.In 44 h of observational data,a total...We report on the properties of strong pulses from PSR B0656＋14 by analyzing the data obtained using the Urumqi 25-m radio telescope at 1540 MHz from August 2007 to September 2010.In 44 h of observational data,a total of 67 pulses with signal-to-noise ratios above a 5σthreshold were detected.The peak flux densities of these pulses are 58 to 194 times that of the average profile,and their pulse energies are 3 to 68 times that of the average pulse.These pulses are clustered around phases about 5-ahead of the peak of the average profile.Compared with the width of the average profile,they are relatively narrow,with the full widths at half-maximum ranging from 0.28 ° to 1.78 °.The distribution of pulse-energies follows a lognormal distribution.These sporadic strong pulses detected from PSR B0656＋14 have different characteristics from both typical giant pulses and its regular pulses.展开更多
A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 rat...A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.展开更多
基金Project(50902062)supported by the National Natural Science Foundation of ChinaProject(KKZ1200927002)supported by Key Programme of Kunming University of Science and Technology,China
文摘La0.72Ca0.28MnO3 thin films were deposited on untilted and 15° tilted LaAlO_3 （100） single crystalline substrates by pulsed laser deposition. The polycrystalline targets used in the deposition process were synthesized by sol-gel and coprecipitation methods, respectively. The structure, electrical transport properties and surface morphology of the targets and films were studied. It is found that, compared with coprecipitation method, the sol-gel target has more homogeneous components and larger density and grain size, thus the higher insulator-metal transition temperature and larger temperature coefficient of resistivity. The thin film prepared by sol-gel target has a uniform grain size and higher quality. The metal-insulator transition temperature is higher and the laser induced voltage signal is larger. Preparing the target by sol-gel method can largely improve the properties of corresponding thin films in pulsed laser deposition process.
基金supported by the National Natural Science Foundation of China (Grant Nos. 11363004, 11433008, 11633007, 11703040, 11743007, 11773014,11847309 and 11851305)the Youth Innovation Promotion Association of CAS+1 种基金the National Key R&D Programs of China (Nos. 2017YFA0402600 and 2015CB857100)supported by the Open Project Program of the Key Laboratory of FAST, NAOC, Chinese Academy of Sciences
文摘We have performed a multi-wavelength study toward a quasi-sinusoidal filament(CFG028.68–0.28). A new large-scale ^12CO J = 3-2 map was obtained from the China-Cologne Observation for Sub Millimeter Astronomy(CCOSMA) 3m radio telescope. Based on the ATLASGAL catalog, we have identified 27 dust clumps in the filament. Through the relationship between the mass and radius of these clumps, 67% of these clumps are dense and massive enough to potentially form massive stars. The obtained CFE is ~11% in the filament. The filament has a linear mass density of ~305 M⊙pc^-1, which is smaller than its critical mass to length ratio. This suggests that the external pressure from the neighboring H Ⅱ regions may help prevent the filament from dispersing under the effects of turbulence. Comparing the energy injection from outflows and H Ⅱ regions in the filament, the ionization feedback from the H Ⅱ regions can help maintain the observed turbulence.
文摘采用双洛伦兹模型和有效介质近似(Efficient Medium Approximation,EMA)色散模型对退火的Mn_(1.95)Co_(0.77)Ni_(0.28)O_(4)薄膜在近红外和中红外波段的椭偏数据进行了拟合。通过比较直流电压下测试的电导率与低频下计算的电导率(ω→0)发现,A谐振子主要产生传导电流,B谐振子主要产生位移电流。对于Mn_(1.95)Co_(0.77)Ni_(0.28)O_(4)薄膜,随着退火温度的升高,晶格共振吸收逐渐被电子共振吸收所取代。退火样品的折射率n和消光系数k均由退火过程决定。
基金funded by the National Natural Science Foundation of China(Grant No.10973026)
文摘We report on the properties of strong pulses from PSR B0656＋14 by analyzing the data obtained using the Urumqi 25-m radio telescope at 1540 MHz from August 2007 to September 2010.In 44 h of observational data,a total of 67 pulses with signal-to-noise ratios above a 5σthreshold were detected.The peak flux densities of these pulses are 58 to 194 times that of the average profile,and their pulse energies are 3 to 68 times that of the average pulse.These pulses are clustered around phases about 5-ahead of the peak of the average profile.Compared with the width of the average profile,they are relatively narrow,with the full widths at half-maximum ranging from 0.28 ° to 1.78 °.The distribution of pulse-energies follows a lognormal distribution.These sporadic strong pulses detected from PSR B0656＋14 have different characteristics from both typical giant pulses and its regular pulses.
基金the Foundation for Key Projects of Basic Research (TG2000036601)the '863' High Tech Foundation (2002AA31119Z, 2001AA312190) the National Natural Science Foundation of China (Grant No. 60244001).
文摘A systematic study of the nonselective and smooth etching of GaN/AIGaN het-erostructures was performed using C12/Ar/BCI3 inductively coupled plasmas (ICR).Nonselective etching can be realized by adjusting the BCI3 ratio in the Cl2/Ar/BCI3 mixture (20%—60%), increasing the ICR power and dc bias, and decreasing the chamber pressure. Surface morphology of the etched heterostructures strongly depends on the gas chemistry and the chamber pressure. Specifically, with the addition of 20% BCI3 to Cl2/Ar (4:1) gas mixture, nonselective etching of GaN/Al0.28Ga0.72N heterostructures at high etch rate is maintained and the surface root-mean-square (rms) roughness is reduced from 10.622 to 0.495 nm, which is smoother than the as-grown sample. Auger electron spectroscopy (AES) analysis shows that the effective removal of residual oxygen from the surface of AIGaN during the etching process is crucial to the nonselective and smooth etching of GaN/AIGaN herterostructures at high etch rate.
