Radiation-induced 1/f noise degradation of PNP bipolar junction transistors at different dose rates

It is found that ionizing-radiation can lead to the base current and the 1/f noise degradations in PNP bipolar junction transistors. In this paper, it is suggested that the surface of the space charge region of the emitter-base junction is the main source of the base surface 1/f noise. A model is developed which identifies the parameters and describes their interactive contributions to the recombination current at the surface of the space charge region. Based on the theory of carrier number fluctuation and the model of surface recombination current, a 1/f noise model is developed. This model suggests that 1/f noise degradations are the result of the accumulation of oxide-trapped charges and interface states. Combining models of ELDRS, this model can explain the reason why the 1/f noise degradation is more severe at a low dose rate than at a high dose rate. The radiations were performed in a Co60 source up to a total dose of 700 Gy（Si）. The low dose rate was 0.001 Gy（Si）/s and the high dose rate was 0.1 Gy（Si）/s. The model accords well with the experimental results.

Restoration of Noisy 1/f Family Fractal Signal Based on Haar Wavelets and Wiener Filter

In order to restore noisy fractal Brownian motion(FBM),discrete fractional gaussiannoise(DFGN) combined with noise increments is decomposed by Haar wavelets based on Mallatalgorithm.Considering the correlation of detail coefficients,a bank of Wiener filters are used to estimatethe detail coefficients to reconstruct DFGN considering the estimated approximation coefficients in thecoarsest scale in the minimum mean square sense.Then,the reconstructed DFGN is used to restore FBM.In the digital simulation,in light of the restoration mean square error,we show that the suppose that thecorrelation of detail coefficients and the approximation coefficients in the coarsest scale for any Hurstcould be avoided is unrealistic.Moreover,we calculate the estimation root mean square error of the hurstparameter of the restored FBM to show the validity of our algorithm.

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.

The 1/f noise in multiwalled carbon nanotubes

The 1/f noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples.

THE WAVELET TRANSFORM BASED PROCESSING MEANS FOR 1/f NOISE IN MILLIMETER WAVE FOCAL PLANE ARRAY

After briefly introducing the characteristics of 1/f noise in millimeter wave focalplane array detectors, the paper analyses the relation of wavelet transform and 1/f noise in detail, suggests the fashion of decorrelating 1/f noise using the wavelet transform and deduces the relative expressions. The results of computer simulation show good effectiveness.

PBTI stress-induced 1/f noise in n-channel FinFET

The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(FinFET).The FinFET with long and short channel(L=240 nm,16 nm respectively)is characterized under PBTI stress from 0 s to 104 s.The 1/f noise features are analyzed by using the unified physical model taking into account the contributions from the carrier number and channel mobility fluctuations.The I d-V g,I d-V d,I g-V g tests are conducted to support and verify the physical analysis in the PBTI process.It is found that the influence of the channel mobility fluctuations may not be neglected.Due to the mobility degradation in a short-channel device,the noise level of the short channel device also degrades.Trapping and trap generation regimes of PBTI occur in high-k layer and are identified based on the results obtained for the gate leakage current and 1/f noise.

Lévy Flights, 1/<i>f </i>Noise and Self Organized Criticality

A new analysis of a previously studied traveling agent model, showed that there is a relation between the degree of homogeneity of the medium where the agents move, agent motion patterns, and the noise generated from their displacements. We proved that for a particular value of homogeneity, the system self organizes in a state where the agents carry out Lévy walks and the displacement signal corresponds to 1/f noise. Using probabilistic arguments, we conjectured that 1/f noise is a fingerprint of a statistical phase transition, from randomness (disorder) to predictability (order), and that it emerges from the contextuality nature of the system which generates it.

1/f噪声及其在二维材料石墨烯中的研究进展

1/f噪声具有丰富的物理内涵,既是科学研究的量化工具,也是电子器件重要性能指标.本文从通用数学形式和物理背景两个方面归纳总结1/f噪声模型.首先介绍了基于马尔可夫过程和基于扩散过程的1/f噪声通用数学模型.在此基础上,溯源1/f噪声物理模型的发展历程,总结五类典型物理模型,包括Mc Whorter模型、Hooge模型、Voss-Clarker模型、Dutta-Horn模型、干涉模型以及Hung统一模型.二维材料石墨烯让1/f噪声研究重归学术热点,本文梳理了当前石墨烯1/f噪声研究中形成的共识性研究成果,提出石墨烯低频噪声研究的三层次分类分析模型,分析了不同层面噪声机理研究代表性成果,归纳总结了各层面可能的主导机制.通过比较不同团队报道的石墨烯1/f噪声栅极调控特征谱型及测试条件,分析了复杂多变栅控谱型形成原因.基于分析结论,为避免非本征噪声干扰,提出了石墨烯本征背景1/f噪声规范性测量方案,为厘清和揭示石墨烯1/f噪声机制及特性探索可行技术途径.

Low frequency noise in asymmetric double barrier magnetic tunnel junctions with a top thin MgO layer

Low frequency noise has been investigated at room temperature for asymmetric double barrier magnetic tunnel junctions（DBMTJs）, where the coupling between the top and middle CoFeB layers is antiferromagnetic with a 0.8-nm thin top Mg O barrier of the CoFeB/MgO/CoFe/CoFeB/MgO/CoFe B DBMTJ. At enough large bias, 1/f noise dominates the voltage noise power spectra in the low frequency region, and is conventionally characterized by the Hooge parameter αmag.With increasing external field, the top and bottom ferromagnetic layers are aligned by the field, and then the middle free layer rotates from antiparallel state（antiferromagnetic coupling between top and middle ferromagnetic layers） to parallel state. In this rotation process αmag and magnetoresistance-sensitivity-product show a linear dependence, consistent with the fluctuation dissipation relation. With the magnetic field applied at different angles（θ） to the easy axis of the free layer,the linear dependence persists while the intercept of the linear fit satisfies a cos（θ） dependence, similar to that for the magnetoresistance, suggesting intrinsic relation between magnetic losses and magnetoresistance.

分形分析1/f噪声性能

电子器件的低频噪声通常由闪烁(1/f噪声)噪声、g-r噪声和爆裂噪声3种成分构成。这些噪声通常与晶体管表面状态或内部缺陷有关,其中,1/f噪声已成为对器件的质量评估及可靠性预测的重要指标。提出分形分析方法,对1/f噪声性能进行分析。仿真实验结果验证了该方法的可行性,为今后用分形理论研究器件低频噪声提供了理论依据。

光电耦合器件1/f噪声和g-r噪声的机理研究

对光电耦合器件1/f噪声和gr噪声(产生-复合噪声)的偏置特性及其产生机理进行了实验和理论研究.结果表明在低频段,光电耦合器件的gr噪声通常表现为叠加1/f噪声,且两者均随输入电流的增加呈现先增大后减小的规律.通过测量前级噪声和后级噪声,发现光电耦合器件的gr噪声源为后级光敏三极管.理论分析表明光电耦合器件的1/f噪声主要为表面1/f噪声,gr噪声则源于光敏三极管发射结空间电荷区的深能级对载流子的俘获和发射.

1/f噪声的精确测量及其在太阳能电池可靠性筛选中的应用

为了实现对太阳能电池可靠性的筛选分类,建立了一套低频噪声自动测试系统。首先,根据太阳能电池1/f噪声的来源,确定了在大电流密度情况下以1/f噪声功率谱作为太阳能电池可靠性指示的可行性。然后,由测试得到的功率谱曲线明确了通过比较在f为1Hz频点处的1/f噪声功率谱值大小可以区分太阳能电池的可靠性。最后,根据半导体器件可靠性试验验证的分类标准,给出了确定筛选阈值的方法。实验结果表明:该方法可以在短时间内无损地完成一批太阳能电池3个等级的可靠性分类,平均每个太阳能电池的测试时间只需5min。采用该筛选方法,能精确检测单一器件,解决了传统方法花费大、周期长,易引起器件的损伤,且只能得到一批器件可靠性的统计规律的问题。该方法适用于对太阳能电池可靠性要求高的应用场合。

1/f噪声检测MOSFET静电潜在损伤的理论基础

分析了MOSFET静电损伤的机理 ,发现在静电应力期间 ,随着应力次数的增加 ,在SiO2 体内和Si/SiO2 界面同时产生潜在损伤积累 .Si/SiO2 界面较SiO2 层体内更容易产生缺陷 ,而且缺陷浓度更大 .用逾渗理论模拟了MOSFET中 1/f噪声与边界陷阱浓度的关系 ,得出了与实验相一致的定性结果 ,为MOSFET静电潜在损伤的沟道漏源电流 1/f噪声检测方法提供了理论依据 .

1／f分形噪声的一种多尺度Kalman滤波方法

针对淹没在1／f分形噪声中的有用信号恢复问题,提出了一种基于小波变换与Kalman滤波的多尺度滤波算法。首先将带有1／f分形噪声的信号分解成多尺度的子带信号,通过小波变换对1／f分形噪声的白化作用,消除了1／f分形噪声的自相似性和长程相关性。然后在小波域内,利用Kalman滤波实现了噪声和有用信号的分离,估计出了各子带中的有用信号。最后进行小波重构,较好地恢复出淹没在1／f分形噪声中的有用信号。仿真实验表明,使用多尺度Kalman滤波器能有效地抑制分形噪声,显著地提高了信噪比。

基于小波分析和虚拟仪器技术的1/f噪声研究

传统基于傅立叶分析和频谱分析仪的微弱信号检测方法无法对1/f噪声进行实时、高速、精确的测量与分析。本文在以虚拟仪器为平台,内嵌小波分析的低频噪声检测系统基础上对1/f噪声进行了实验和理论研究。实验结果表明,该系统能够检测到的1/f噪声幅值比传统的测试方法低2个数量,以小波理论构建的两个参量更深入细微地表征了1/f噪声特性:模极大值分布能够鉴别不同类型的1/f噪声产生机构,相似系数可描述应力对器件1/f噪声的影响。

1/f类分形信号的最小二乘法参数估计

根据含噪1/f类分形信号的小波变换系数方差随尺度变化的特点,该文提出了一种估计1/f类分形信号参数的新方法,即对其小波系数方差进行简单的变换,使1/f类分形信号参数估计满足最小二乘法参数估计的条件。仿真实验结果表明,该方法可以有效地从加性白噪声背景下估计出1/f类分形信号的γ,σ2等参数,从而使1/f类分形信号与加性白噪声分离。

基于Shannon熵的1/f类分形信号去噪方法

通过分析1/f类分形信号及白噪声小波系数的Shannon熵在不同分解级数上的特点,提出了根据信号熵所占比例,从加性白噪声背景下估计分形信号的方法。计算机仿真结果表明,该方法简单可靠、有效可行,且事先不需要知道分形信号参数及加性白噪声的统计特性,只需估计出带噪分形信号的信噪比,具有较好的适应性。

1/f类分形信号的小波去噪方法

提出了一种用基于分形信号在不同尺度下小波系数方差来估计噪声方差及分形信号参数的新方法,进而从加性白噪声背景下估计出1/f类分形信号。仿真实验结果表明:该方法简单可靠,有效可行,且事先不需要知道分形信号参数及加性白噪声的统计特性,并对信噪比估计误差有很好的鲁棒性。

利用几何插值法合成1/f噪声

提出了通过对均匀分布的随机序列进行几何插值而合成 1/ f噪声的方法 ,探讨了 1/ f噪声具有的自相似结构的分形特征 .

基于小波变换的1/f类分形信号的参数估计

为了估计1/f类分形信号模型———分数布朗运动的自相似参数,对离散分数高斯噪声进行了Haar小波变换。根据细节小波系数方差和尺度的关系,在最小二乘法的基础上推导出一种估计算法。在仿真中,和EM算法相比较,以方均根误差为指标说明了本文方法的有效性和优越性,同时讨论了数据长度和小波分解的尺度对本文算法精度的影响。