This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing a...This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.展开更多
An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one p...An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.展开更多
Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at speci...Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at special wavelength is Raman conversion.Phosphorus-doped fiber(PDF),due to the phosphorus-related large frequency shift Raman peak at 40 THz,is a great choice for large frequency shift Raman conversion.Here,by adopting 150 m large mode area triple-clad PDF as Raman gain medium,and a novel wavelength-selective feedback mechanism to suppress the silica-related Raman emission,we build a high power cladding-pumped Raman fiber laser at 1.2μm waveband.A Raman signal with power up to 735.8 W at 1252.7 nm is obtained.To the best of our knowledge,this is the highest output power ever reported for fiber lasers at 1.2μm waveband.Moreover,by tuning the wavelength of the pump source,a tunable Raman output of more than 450 W over a wavelength range of 1240.6–1252.7 nm is demonstrated.This work proves PDF’s advantage in high power large frequency shift Raman conversion with a cladding pump scheme,thus providing a good solution for a high power laser source at special waveband.展开更多
基金We are grateful for financial supports from the Major Program of National Natural Science Foundation of China （61790584）.
文摘This paper reviewed the development of optically pumped GaSb based semiconductor disk lasers （SDLs） emission at 2 μm wavelength region from the aspects of wavelength extending, power scaling, line-width narrowing and short-pulse generation. Most recently, the wavelength of GaSb based SDLs has been extended to 2.8 μm. The highest output power of the GaSb based SDLs has been reached to 17 W at the temperature of 20 ℃. By using active stabilization, the GaSb based SDL with line-width of 20 kHz and output power of 1 W was realized. Moreover, the shortest pulse obtained fromthe GaSb based SDLs was generated as short as 384 fs by incorporating semiconductor saturable absorber mirrors（SESAM） in the cavity.
文摘An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.
基金supported by the National Natural Science Foundation of China(NSFC)(Grant Nos.61635005,61905284,and 62305391)the National Postdoctoral Program for Innovative Talents(No.BX20190063).
文摘Development of a high power fiber laser at special waveband,which is difficult to achieve by conventional rare-earth-doped fibers,is a significant challenge.One of the most common methods for achieving lasing at special wavelength is Raman conversion.Phosphorus-doped fiber(PDF),due to the phosphorus-related large frequency shift Raman peak at 40 THz,is a great choice for large frequency shift Raman conversion.Here,by adopting 150 m large mode area triple-clad PDF as Raman gain medium,and a novel wavelength-selective feedback mechanism to suppress the silica-related Raman emission,we build a high power cladding-pumped Raman fiber laser at 1.2μm waveband.A Raman signal with power up to 735.8 W at 1252.7 nm is obtained.To the best of our knowledge,this is the highest output power ever reported for fiber lasers at 1.2μm waveband.Moreover,by tuning the wavelength of the pump source,a tunable Raman output of more than 450 W over a wavelength range of 1240.6–1252.7 nm is demonstrated.This work proves PDF’s advantage in high power large frequency shift Raman conversion with a cladding pump scheme,thus providing a good solution for a high power laser source at special waveband.
