Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different wave...Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.展开更多
We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial m...We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.展开更多
We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are g...We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave （QCW） condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274046 and 61474111the National Basic Research Program of China under Grant No 2013AA014202
文摘Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60878003)the Science Foundation for Excellent Research Team of the National Natural Science Foundation of China (Grant No. 61121064)the National Basic Research Program of China (Grant No. 2010CB923101)
文摘We report on the generation of a squeezing vacuum at 1.55 μm using an optical parametric amplifier based on periodically poled LiNbO 3.Using three specifically designed narrow linewidth mode cleaners as the spatial mode and noise filter of the laser at 1.55 μm and 775 nm,the squeezed vacuum of up to 3.0 dB below the shot noise level at 1.55 μm is experimentally obtained.This system is compatible with standard telecommunication optical fibers,and will be useful for continuous variable long-distance quantum communication and distributed quantum computing.
基金supported by the National Natural Science Foundation of China(Nos.61274044 and61020106007)the National Basic Research Program of China(No.2010CB327600)+3 种基金the Natural Science Foundational Science and Technology Cooperation Projects(No.2011RR000100)the 111 Project of China(No.B07005)the Fundamental Research Funds for the Central University(No.2013RC1205)the Specialized Research Fund for the Doctoral Program of Higher Education(No.20130005130001)
文摘We fabricate a GaAs-based InGaAs/InGaAsP multiple quantum wells （MQWs） laser at 1.55 pm. Using two-step growth method and thermal cyclic annealing, a thin low-temperature InP layer and a thick InP buffer layer are grown on GaAs substrates by low-pressure metal organic chemical vapor deposition technology. Then, high- quality MQWs laser structures are grown on the InP buffer layer. Under quasi-continuous wave （QCW） condition, a threshold current of 476 mA and slope efficiency of 0.15 mW/mA are achieved for a broad area device with 50 μm wide strip and 500 μm long cavity at room-temperature. The peak wavelength of emission spectrum is 1549.5 nm at 700 mA. The device is operating for more than 2000 h at room-temperature and 600 mA.
