A prototype of a laser driven proton accelerator is built at Peking University. Protons exceeding IOMeV are accelerated from micrometer-thick aluminum targets irradiated by tightly focused laser pulse with 1.8 J energ...A prototype of a laser driven proton accelerator is built at Peking University. Protons exceeding IOMeV are accelerated from micrometer-thick aluminum targets irradiated by tightly focused laser pulse with 1.8 J energy and 30fs duration. The beam energy spectrum and charge distribution are measured by a Thomson parabola spectrometer and radiochromic fihn stacks. The sensitivity of proton cut-off energy to the focusing of the laser beam, the pulse duration, and the foil thickness are systematically investigated in the experiments. Stable proton beams have been produced with an optimized parameter set, providing a cornerstone for the future applications of laser accelerated protons.展开更多
Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 2...Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 220 cm ￣-1mode is attribute to As_1 which is associated, at least in part, with EL2 and EL12 defects.For Sedoped samples, the Raman peaks at 205 and 258 cm￣-1 may be due to vibrational modes in small clus-ters of arsenic, and the 77 and 185 ￣-1modes are probably associated with disorder-activated first order Ra-man scattering.Irradiated results show that the small clusters of arsenic and disorder state are increased with in-creasing irradiation fluences. Other Raman peaks will also be discussed in this paper.展开更多
The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The resul...The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect in-creases at lower fluence levels. At higher fluences, we observe an increase in density of the EL2 level, howev-er,the density of the EL6 is decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2013CBA01502the National Natural Science Foundation of China under Grant Nos 11475010,11575011 and 11535001the National Grand Instrument Project under Grant No 2012YQ030142
文摘A prototype of a laser driven proton accelerator is built at Peking University. Protons exceeding IOMeV are accelerated from micrometer-thick aluminum targets irradiated by tightly focused laser pulse with 1.8 J energy and 30fs duration. The beam energy spectrum and charge distribution are measured by a Thomson parabola spectrometer and radiochromic fihn stacks. The sensitivity of proton cut-off energy to the focusing of the laser beam, the pulse duration, and the foil thickness are systematically investigated in the experiments. Stable proton beams have been produced with an optimized parameter set, providing a cornerstone for the future applications of laser accelerated protons.
文摘Raman scattering measurements on Se-doped GaAs epitaxial layers and semi-insulating (SI) GaAs irradi-ated by 10 Mev electrons have been investigated. Several defect-related features were observed. We suggestthat the 220 cm ￣-1mode is attribute to As_1 which is associated, at least in part, with EL2 and EL12 defects.For Sedoped samples, the Raman peaks at 205 and 258 cm￣-1 may be due to vibrational modes in small clus-ters of arsenic, and the 77 and 185 ￣-1modes are probably associated with disorder-activated first order Ra-man scattering.Irradiated results show that the small clusters of arsenic and disorder state are increased with in-creasing irradiation fluences. Other Raman peaks will also be discussed in this paper.
文摘The induces defects and especially the EL2 defect in 10 MeV electron irradiated undoped semi-insulating(SI) LEC GaAs samples were investigated by using optical transient current spectroscopy (OTCS)technique.The results indicate that the density of EL2 defect of irradiated GaAs decreases and the density of EL6 defect in-creases at lower fluence levels. At higher fluences, we observe an increase in density of the EL2 level, howev-er,the density of the EL6 is decreased. It is suggested that on lower fluences, 10 MeV electron irradiation causes the dissociation of the EL2 defect, and may be used to decrease the main donor level EL2 in SI-GaAs.
