美国模拟器件公司(Analog Devices,Inc.,简称ADI)最新推出的全差分高速放大器具有业界最好的低噪声、低失真和宽动态范围,是用于驱动高速模数转换器(ADC)的理想产品。ADI公司扩展差分放大器产品种类的最新成员是AD8139和AD8137。它们专...美国模拟器件公司(Analog Devices,Inc.,简称ADI)最新推出的全差分高速放大器具有业界最好的低噪声、低失真和宽动态范围,是用于驱动高速模数转换器(ADC)的理想产品。ADI公司扩展差分放大器产品种类的最新成员是AD8139和AD8137。它们专为满足驱动12 bit～18 bit ADC的性能要求而设计,12 bit～18 bit ADC是宽带仪器仪表、通信设备、军用设备和工业设备应用的关键器件。展开更多
In this study,(Cr_(1/3)/Ta_(2/3))non-equivalent co-doped Bi_(4)Ti_(3)O_(12)(BIT)ceramics were prepared to solve the problem that high piezoelectric performance,high Curie temperature,and high-temperature resistivity c...In this study,(Cr_(1/3)/Ta_(2/3))non-equivalent co-doped Bi_(4)Ti_(3)O_(12)(BIT)ceramics were prepared to solve the problem that high piezoelectric performance,high Curie temperature,and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics.A series of Bi_(4)Ti_(3-x)(Cr_(1/3)Ta_(2/3))_(x)O_(12)(x=0-0.04)ceramics were synthesized by the solid-state reaction method.The phase structure,microstructure,piezoelectric performance,and conductive mechanism of the samples were systematically investigated.The B-site non-equivalent co-doping strategy combining high-valence Ta^(5+)and low-valence Cr^(3+)significantly enhances electrical properties due to a decrease in oxygen vacancy concentration.Bi_(4)Ti_(2.97)(Cr_(1/3)Ta_(2/3))_(0.03)O_(12)ceramics exhibit a high piezoelectric coefficient(d_(33)=26 pC·N^(-1))and a high Curie temperature(TC=687℃).Moreover,the significantly increased resistivity(ρ=2.8×10^(6)Ω·cm at 500℃)and good piezoelectric stability up to 600℃are also obtained for this composition.All the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.展开更多
文摘美国模拟器件公司(Analog Devices,Inc.,简称ADI)最新推出的全差分高速放大器具有业界最好的低噪声、低失真和宽动态范围,是用于驱动高速模数转换器(ADC)的理想产品。ADI公司扩展差分放大器产品种类的最新成员是AD8139和AD8137。它们专为满足驱动12 bit～18 bit ADC的性能要求而设计,12 bit～18 bit ADC是宽带仪器仪表、通信设备、军用设备和工业设备应用的关键器件。
基金This work is financially supported by the National Natural Science Foundation of China(No.52172135)the Youth Top Talent Project of the National Special Support Program(No.2021-527-07)+1 种基金the Leading Talent Project of the National Special Support Program(No.2022WRLJ003)the Guangdong Basic and Applied Basic Research Foundation for Distinguished Young Scholars(Nos.2022B1515020070 and 2021B1515020083).
文摘In this study,(Cr_(1/3)/Ta_(2/3))non-equivalent co-doped Bi_(4)Ti_(3)O_(12)(BIT)ceramics were prepared to solve the problem that high piezoelectric performance,high Curie temperature,and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics.A series of Bi_(4)Ti_(3-x)(Cr_(1/3)Ta_(2/3))_(x)O_(12)(x=0-0.04)ceramics were synthesized by the solid-state reaction method.The phase structure,microstructure,piezoelectric performance,and conductive mechanism of the samples were systematically investigated.The B-site non-equivalent co-doping strategy combining high-valence Ta^(5+)and low-valence Cr^(3+)significantly enhances electrical properties due to a decrease in oxygen vacancy concentration.Bi_(4)Ti_(2.97)(Cr_(1/3)Ta_(2/3))_(0.03)O_(12)ceramics exhibit a high piezoelectric coefficient(d_(33)=26 pC·N^(-1))and a high Curie temperature(TC=687℃).Moreover,the significantly increased resistivity(ρ=2.8×10^(6)Ω·cm at 500℃)and good piezoelectric stability up to 600℃are also obtained for this composition.All the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.
