阻变存储器(resistance random access memory,RRAM)无源交叉阵列由于其结构简单、密度高、易3D集成等优点而得到广泛的关注,是RRAM实现高存储密度的一种极具应用前景的集成方案.但是无源交叉阵列中的串扰问题限制了其发展与应用.本文...阻变存储器(resistance random access memory,RRAM)无源交叉阵列由于其结构简单、密度高、易3D集成等优点而得到广泛的关注,是RRAM实现高存储密度的一种极具应用前景的集成方案.但是无源交叉阵列中的串扰问题限制了其发展与应用.本文从阻变存储器的集成、无源交叉阵列中的串扰现象出发,综述了应用在无源交叉阵列中的1D1R结构(one diode one resistor)和具有自整流效应的1R结构(one resistor),这2种结构在一定程度上都能够抑制串扰现象的出现,从而避免误读.与有源阵列相比,必须对无源交叉阵列发展一套行之有效的测试方法才能够正确地评估其性能并实现商业应用,综述了当前无源交叉阵列常用的操作电压配置方案.最后,展望了RRAM无源交叉阵列的应用前景.展开更多
Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solu...Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed.展开更多
文摘阻变存储器(resistance random access memory,RRAM)无源交叉阵列由于其结构简单、密度高、易3D集成等优点而得到广泛的关注,是RRAM实现高存储密度的一种极具应用前景的集成方案.但是无源交叉阵列中的串扰问题限制了其发展与应用.本文从阻变存储器的集成、无源交叉阵列中的串扰现象出发,综述了应用在无源交叉阵列中的1D1R结构(one diode one resistor)和具有自整流效应的1R结构(one resistor),这2种结构在一定程度上都能够抑制串扰现象的出现,从而避免误读.与有源阵列相比,必须对无源交叉阵列发展一套行之有效的测试方法才能够正确地评估其性能并实现商业应用,综述了当前无源交叉阵列常用的操作电压配置方案.最后,展望了RRAM无源交叉阵列的应用前景.
基金supported by the National Basic Research Program of China ("973" Project) (Grant Nos. 2011CB309602, 2010CB934200, 2008CB925002)the National Natural Science Foundation of China (Grant Nos. 60825403, 50972160)+1 种基金the Hi-Tech Research and Development Program of China ("863" Project) (Grant No. 2009AA03Z306)the National Key Project (Grant No. 2009ZX02023-005-4)
文摘Resistive random access memory(RRAM) with crossbar structure is receiving widespread attentions due to its simple structure,high density,and feasibility of three-dimensional(3D) stack.It is an extremely promising solution for high density storage.However,a major issue of crosstalk restricts its development and application.In this paper,we will first introduce the integration methods of RRAM device and the existing crosstalk phenomenon in passive crossbar array,and then focus on the 1D1R(one diode and one resistor) structure and self-rectifying 1R(one resistor) structure which can restrain crosstalk and avoid misreading for the passive crossbar array.The test methods of crossbar array are also presented to evaluate the performances of passive crossbar array to achieve its commercial application in comparison with the active array consisting of one transistor and one RRAM cell(1T1R) structure.Finally,the future research direction of rectifying-based RRAM passive crossbar array is discussed.
