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Zn_(3)(VO_(4))_(2):xDy^(3+)黄色荧光粉的制备与性能
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作者 张辉霞 吴同华 +1 位作者 孙芳 贾相华 《材料导报》 EI CAS CSCD 北大核心 2024年第S01期33-37,共5页
以氧化锌和五氧化二钒为原料,氧化镝为掺杂离子,利用高温固相法合成了一系列的掺杂稀土镝的钒酸锌黄色荧光粉。对其光学性能进行了研究,结果表明,所制备的粉体都保持了矾酸锌的结构,并且荧光粉的发射光是VO_(4)^(3+)基团和Dy所致。当激... 以氧化锌和五氧化二钒为原料,氧化镝为掺杂离子,利用高温固相法合成了一系列的掺杂稀土镝的钒酸锌黄色荧光粉。对其光学性能进行了研究,结果表明,所制备的粉体都保持了矾酸锌的结构,并且荧光粉的发射光是VO_(4)^(3+)基团和Dy所致。当激发波长为350 nm时,其发射峰是位于510~595 nm的宽带状光谱,主峰位于563 nm处。研究了合成温度和Dy掺杂浓度对发光性能的影响,结果表明,当合成温度为800℃和Dy掺杂摩尔分数为6%时,Dy^(3+)能很好地进入到矾酸锌的晶格中,减小了荧光材料光学带隙,增强了光的吸收性能。暗室环境下封装后的荧光粉LED芯片具有良好的黄色发光性能。 展开更多
关键词 氧化镝 光学带隙 发光性能 黄色荧光粉 钒酸锌
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SrIn_2O_4∶Sm^(3+)红色荧光粉的发光特性 被引量:11
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作者 刘海燕 孙明生 +1 位作者 杨志平 杨艳民 《发光学报》 EI CAS CSCD 北大核心 2011年第1期38-41,共4页
采用燃烧法合成了SrIn2O4:Sm3+红色荧光粉并研究了其发光性质。发射光谱由位于红橙区的3个主要荧光发射峰组成,峰值分别为568,606,660nm,对应Sm3+的4G5/2→6H5/2、4G5/2→6H7/2和4G5/2→6H9/2特征跃迁发射,其中606nm的发射最强。激发光... 采用燃烧法合成了SrIn2O4:Sm3+红色荧光粉并研究了其发光性质。发射光谱由位于红橙区的3个主要荧光发射峰组成,峰值分别为568,606,660nm,对应Sm3+的4G5/2→6H5/2、4G5/2→6H7/2和4G5/2→6H9/2特征跃迁发射,其中606nm的发射最强。激发光谱包括峰值位于323,413nm的宽带,说明该荧光粉可以被近紫外-紫色发光二极管管芯激发发射红光。研究了Sm3+的掺杂浓度对样品发光强度的影响。实验结果表明SrIn2O4:Sm3+是一种可用于制作白光LED的红色荧光粉。 展开更多
关键词 LED 荧光粉 Sm3+ SrIn2O4
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一种基于2^m带正交小波理论的DWMT方案
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作者 张小东 徐澄圻 《南京邮电学院学报》 1999年第4期1-4,共4页
从2带正交小波基出发,探讨了2m带正交小波理论,基于该理论,提出了一种新的可精确重构子带信号的DWMT系统结构。
关键词 2带正交小波 离散小波多频音 DWmT
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Synthesis of M1-3xAl2O4:Eu2+x/Dy3+ 2x(M^2+= Sr^2+, Ca^2+ and Ba^2+) phosphors with long-lasting phosphorescence properties via co-precipitation method 被引量:1
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作者 Jinkai Li Bin Liu +2 位作者 Qi Chen Yizhong Lu Zongming Liu 《Chemical Reports》 2019年第2期112-117,共6页
The long afterglow fluorescent material of M1-3xAl2O4:Eu2+ x/Dy3+2x(M2+= Sr2+, Ca2+ and Ba2+) phosphors are successfully synthesized by calcining precursor obtained via co-precipitation method at 1300oC for 4 h with r... The long afterglow fluorescent material of M1-3xAl2O4:Eu2+ x/Dy3+2x(M2+= Sr2+, Ca2+ and Ba2+) phosphors are successfully synthesized by calcining precursor obtained via co-precipitation method at 1300oC for 4 h with reducing atmosphere (20% H2 and 80% N2). The phase evolution, morphology and afterglow fluorescent properties are systematically studied by the various instruments of XRD, FE-SEM, PLE/PL spectroscopy and fluorescence decay analysis. The PL spectra shows that the Sr1-3xAl2O4:Eu2+x/Dy3+ 2x phosphors display vivid green emission at s519 nm (4f65d1!4f7 transition of Eu2+) with monitoring of the maximum excitation wavelength at s334 nm (8S7=2!6IJ transition of Eu2+), among which the optimal concentration of Eu2+ and Dy3+ is 15 at.% and 30 at.%, respectively. The color coordinates and temperature of Sr1-3xAl2O4:Eu2+ x/Dy3+ 2x phosphors are approximately at (s0.27, s0.57) and s6700 K, respectively. On the above basis, the M0:55Al2O4:Eu2+ 0:15/Dy3+ 0:3 (M2+= Ca2+ and Ba2+) phosphors is obtained by the same method. The PL spectra of these phosphors shows the strongest blue emission at s440 nm and cyan emission at s499 nm under s334 nm wavelength excitation, respectively, which are blue shifted comparing to Sr1??3xAl2O4:Eu2+ x/Dy3+ 2x phosphors. The color coordinates and temperatures of M0:55Al2O4:Eu2+ 0:15/Dy3+ 0:3 (M2+= Ca2+ and Ba2+) phosphors are approximately at (s0.18, s0.09), s2000 K and (s0.18, s0.42), s11600 K, respectively. In this work, long afterglow materials of green, blue and cyan aluminates phosphors with excellent properties have been prepared, in order to obtain wide application in the field of night automatic lighting and display. 展开更多
关键词 long AFTERGLOW material CO-PRECIPITATION method m1-3xAl2O4:Eu2+ x/Dy3+ 2x(m2+= Sr2+ Ca2+ and Ba2+) PHOSPHORS luminescent property
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THEORY OF ORTHONORMAL M-BAND WAVELET PACKETS
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作者 Zhang Jiankang Bao Zheng Jiao Licheng (Key Lab. for Radar Signal Processing, Xidian University, Xi’an 710071) 《Journal of Electronics(China)》 1998年第3期193-198,共6页
In recent years, M-band orthonormal wavelet bases, due to their good characteristics, have attracted much attention. The ability of 2-band wavelet packets to decompose high frequency channels can be employed to improv... In recent years, M-band orthonormal wavelet bases, due to their good characteristics, have attracted much attention. The ability of 2-band wavelet packets to decompose high frequency channels can be employed to improve the performance of wavelets for time-frequency localization, which makes more kinds of signals for analyzing by wavelets. Similar to the notations from the extension of 2-band wavelets to 2-band wavelet packets, the theoretic framework of M-band wavelet packets is developed, a generalization of the notations and properties of 2-band wavelet packets to that of M-band wavelet packets is made and the corresponding proofs are given. 展开更多
关键词 2-band WAVELETS m-band WAVELETS WAVELET PACKETS
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Tunable electronic band structure,luminescence properties and thermostability of(Gd_(1-x)La_(x))_(2)Si_(2)O_(7):Ce scintillator by adjusting La/Gd ratio 被引量:1
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作者 Qinhua Wei Zhenzhen Zhou +4 位作者 Weijie Zhang Gao Tang Qian Liu Laishun Qin Hongsheng Shi 《Journal of Rare Earths》 SCIE EI CAS CSCD 2021年第6期657-665,I0002,共10页
Mixed crystal strategy is an effective approach of improving the luminescence properties of optical materials and has been adopted widely in many systems.In this paper,the La-mixed Gd_(2)Si_(2)O_(7):Ce polycrystalline... Mixed crystal strategy is an effective approach of improving the luminescence properties of optical materials and has been adopted widely in many systems.In this paper,the La-mixed Gd_(2)Si_(2)O_(7):Ce polycrystalline samples were successfully synthesized by a sol-gel method.The crystal structure and luminescence properties were confirmed and discussed by XRD,UV-Vis luminescence spectra,and XEL,respectively.The vacuum ultraviolet excitation spectra and thermoluminescence glow curves were also systematically investigated and discussed at varied temperature.A combination of the first-principles calculations and optical characterization experiments was employed to study the electronic band structure of host material,revealing that the band gap is narrowed and the 5d_(1) level of Ce^(3+) shifts to higher energy as the La content increases.The luminescence the rmo-stability and activation energy were also measured and calculated.It indicates that thermo-stability is strongly dependent on the La concentration.An effective approach is developed to tune the electronic band structure,luminescence properties and thermostability of(Gd_(1-x)La_(x))_(2)Si_(2)O_(7):Ce scintillator by adjusting La/Gd ratio. 展开更多
关键词 First-principles calculations Scintillator (Gd_(1-x)La_(x))_(2)Si_(2)O_(7):Ce band structure tunable luminescence properties Rare earths
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M带正交子波包理论 被引量:4
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作者 张建康 保铮 焦李成 《电子科学学刊》 CSCD 1998年第1期1-6,共6页
M带正交子波基由于所具有的优良特性得到了广泛关注。2带子波包具有划分较高频率倍频程的能力,可用于改善子波对时间-频率局部化的性能,推广了信号的适用范围。本文用类似于从2带正交子波基扩展到2带子波包的概念,建立了M带子波包的的... M带正交子波基由于所具有的优良特性得到了广泛关注。2带子波包具有划分较高频率倍频程的能力,可用于改善子波对时间-频率局部化的性能,推广了信号的适用范围。本文用类似于从2带正交子波基扩展到2带子波包的概念,建立了M带子波包的的理论框架,并把有关2带子波包的定义、概念和性质推广到一般的M带子波包,给出了相应的证明。 展开更多
关键词 带子波 子波包 信号处理
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纳米SrAl_2O_4:Eu^(2+),Dy^(3+)长余辉发光材料的制备与表征 被引量:2
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作者 梁小平 刘凯 +5 位作者 王欢 周倩倩 王军 陈鹏 徐海 李少红 《天津工业大学学报》 CAS 北大核心 2014年第6期25-29,共5页
采用甘氨酸-硝酸盐法(GNP)制备了SrAl2O4:Eu2+,Dy3+长余辉发光材料,研究了甘氨酸和金属离子的摩尔比(G/M)对Sr Al2O4:Eu2+,Dy3+长余辉发光材料结构与性能的影响.结果表明:随着G/M的增加,产物的晶粒尺寸和发射强度增大,发射光谱红移,而... 采用甘氨酸-硝酸盐法(GNP)制备了SrAl2O4:Eu2+,Dy3+长余辉发光材料,研究了甘氨酸和金属离子的摩尔比(G/M)对Sr Al2O4:Eu2+,Dy3+长余辉发光材料结构与性能的影响.结果表明:随着G/M的增加,产物的晶粒尺寸和发射强度增大,发射光谱红移,而初始亮度呈现先增后减的规律;G/M为3∶1时,得到的产物为纯Sr Al2O4晶相,平均晶粒尺寸为75 nm,初始亮度最大;采用GNP合成的Sr Al2O4:Eu2+,Dy3+长余辉发光材料的发射光谱为宽谱带发光光谱,其发射主峰位为508 nm左右,是典型的Eu2+的4 f 5 d→4 f的特征发射。 展开更多
关键词 纳米SrAl204 EU^2+ DY^3+ 长余辉发光材料 甘氨酸一硝酸盐法 甘氨酸和金属离子的摩尔比(G m)
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M-带小波的多尺度分解方法
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作者 段汕 《中南民族大学学报(自然科学版)》 CAS 2004年第3期86-88,共3页
基于 Daubechies的 2 -带小波及 Mallat算法的基本思想 ,通过构造尺度滤波的方法 ,对于 M-带小波的基本理论及其多尺度的分解方法进行了研究 ,从理论的角度获得了一种构造
关键词 小波分析 mALLAT算法 2-带小波 m-带小波 信号处理 mRA方法
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Pb^2+:CaWO4晶体电子结构研究 被引量:2
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作者 黄善营 马晓红 杨凯华 《原子与分子物理学报》 CAS CSCD 北大核心 2008年第6期1503-1506,共4页
运用局域密度泛函理论的离散变分方法(DV-X()模拟计算了掺Pb2+后CaWO4晶体的电子结构.计算结果表明,掺Pb2+后晶体的带隙明显变窄;晶体中可能存在Pb的6 s态到W的5 d态的电子跃迁过程,用过渡态的方法计算得到其光学跃迁能为3.86 eV(对应32... 运用局域密度泛函理论的离散变分方法(DV-X()模拟计算了掺Pb2+后CaWO4晶体的电子结构.计算结果表明,掺Pb2+后晶体的带隙明显变窄;晶体中可能存在Pb的6 s态到W的5 d态的电子跃迁过程,用过渡态的方法计算得到其光学跃迁能为3.86 eV(对应322 nm吸收带).并解释了晶体内440 nm发光带起源于W的5 d态到Pb的6 s的金属离子间电子转移过程. 展开更多
关键词 pb^2+:CaWO4 电子结构 吸收带 发光带
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Photoluminescence and structural analysis of wurtzite(ZnO)1-x(V2O5)x composite
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作者 Amjid Iqbal Arshad Mahmood +5 位作者 Q. Raza A. Shah Rashad Rashid Zahid Ali A. Malik U. Aziz 《Journal of Semiconductors》 EI CAS CSCD 2018年第8期6-9,共4页
This paper demonstrates the structural, vibrational and photoluminescence characteristics of(ZnO)(VO)(x = 0, 3, 6 and 9 mol%) composites semiconductor synthesized by using the solid state reaction method. X-ray diffra... This paper demonstrates the structural, vibrational and photoluminescence characteristics of(ZnO)(VO)(x = 0, 3, 6 and 9 mol%) composites semiconductor synthesized by using the solid state reaction method. X-ray diffraction(XRD) studies show that(ZnO)(VO)composites have the poly crystalline wurtzite structure of hexagonal Zn O. It is found from the XRD results that the lattice constants and the crystallite size increase while the dislocation density decreases with increase in doping concentration. The existence of E1(TO) and E2(high) Raman modes show that the Zn O still preserve wurtzite structure after doping vanadium oxide, which is in agreement with XRD results. Room temperature photoluminescence(PL) exhibit near band edge and broad deep level emission while indicating the suppression of deep level emission with the incorporation of VOup to a certain concentration(x < 9). Moreover, the optical band gap increase with doping, which is accompanied by the blue shift of the NBE emission. 展开更多
关键词 Raman modes dislocation density band edge emission (ZnO)_(1-x)(V_2O_5)_x luminescence
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Thermal and luminescent properties of 2 μm emission in thulium-sensitized holmium-doped silicate-germanate glass 被引量:2
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作者 Rong Chen Ying Tian +5 位作者 Bingpeng Li Xufeng Jing Junjie Zhang Shiqing Xu Hellmut Eckert Xianghua Zhang 《Photonics Research》 SCIE EI 2016年第6期214-221,共8页
In this paper, we present the luminescent properties of Tm^(3+)∕Ho^(3+)co-doped new glass. A series of silicategermanate glass was prepared by the conventional melt-quenching method. In the Tm^(3+)∕Ho^(3+)co-doped s... In this paper, we present the luminescent properties of Tm^(3+)∕Ho^(3+)co-doped new glass. A series of silicategermanate glass was prepared by the conventional melt-quenching method. In the Tm^(3+)∕Ho^(3+)co-doped silicategermanate glass, a strong emission of 2 μm originating from the Ho^(3+):~5I_7→~5I_8transition can be observed under conventional 808 nm pumping. The characteristic temperatures, structure, and absorption spectra have been measured. The radiative properties of Ho^(3+)in the prepared glass were calculated. The emission cross section of Ho^(3+)ions transition can reach 4.78 × 10^(-21)cm^2 around 2 μm, and the FWHM is as high as 153 nm. The energy transfer efficiency between Ho^(3+)and Tm^(3+)has a large value(52%), which indicates the Tm^(3+)∕Ho^(3+)co-doped silicategermanate glass is a suitable candidate for the 2 μm laser. Moreover, the energy transfer mechanism between Tm^(3+)and Ho^(3+)ions was investigated. 展开更多
关键词 Ho Tm Thermal and luminescent properties of 2 m emission in thulium-sensitized holmium-doped silicate-germanate glass
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Design of an on‑chip wavelength conversion device assisted by an erbium‑ytterbium co‑doped waveguide amplifier
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作者 Chen Zhou Xiwen He +3 位作者 Mingyue Xiao Deyue Ma Weibiao Chen Zhiping Zhou 《Frontiers of Optoelectronics》 EI CSCD 2024年第2期51-60,共10页
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin... In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond. 展开更多
关键词 Silicon-based optoelectronics Wavelength conversion Waveguide amplifier m band
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发光材料BaFBr:Eu的穆斯堡尔谱研究
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作者 陈伟 宋家庆 +2 位作者 苏勉曾 刘密兰 金明芝 《物理化学学报》 SCIE CAS CSCD 北大核心 1994年第8期692-697,共6页
首次应用穆斯堡尔谱对光激励发光材料BaFBr:Eu进行了研究.穆斯堡尔谱的研究结果印证了光谱学研究得出的结论,即在BaFBr:Eu中:Eu2+,的发光强度远高于Eu3+的发光强度,Eu3+对Eu2+的发光有增强作用.穆斯堡尔谱的研究还为声子对... 首次应用穆斯堡尔谱对光激励发光材料BaFBr:Eu进行了研究.穆斯堡尔谱的研究结果印证了光谱学研究得出的结论,即在BaFBr:Eu中:Eu2+,的发光强度远高于Eu3+的发光强度,Eu3+对Eu2+的发光有增强作用.穆斯堡尔谱的研究还为声子对发光中心的影响提供了有用的信息.这些结果对于发光机制的认识是很有帮助的. 展开更多
关键词 BaFBr:Eu 光激励发光 穆斯堡尔谱
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反重叠变换的快速算法及其FPGA实现
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作者 吕斌 王世练 +1 位作者 张炜 王宝顺 《重庆邮电学院学报(自然科学版)》 2006年第5期605-608,共4页
常用的反重叠变换算法运算复杂度较大,难以在FPGA中应用。根据DCT_IV的正交性和对称性,提出了基于M/2点FFT蝶形运算的反重叠变换快速算法。进一步分析了算法的复杂度,采用并行处理和流水线技术完成了反重叠变换快速算法的硬件设计和FGP... 常用的反重叠变换算法运算复杂度较大,难以在FPGA中应用。根据DCT_IV的正交性和对称性,提出了基于M/2点FFT蝶形运算的反重叠变换快速算法。进一步分析了算法的复杂度,采用并行处理和流水线技术完成了反重叠变换快速算法的硬件设计和FGPA实时实现。 展开更多
关键词 反重叠变换 m/2点FFT 窄带干扰
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Structural, elastic and electronic properties for M_2 XC (M=Ti and Cr, X=Ga and Al) phases from ab initio calculations
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作者 B. Ghebouli M.A. Ghebouli +3 位作者 M. Fatmi N. Bouarissa M. Benkerri I.A. Ibrahim 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2011年第4期255-270,共16页
The first-principles study of the structural, elastic and electronic properties of the M2XC phases depending on the type of M transition metal (M are Ti and Cr) and on X (X are Ga and A1) was reported. The calcula... The first-principles study of the structural, elastic and electronic properties of the M2XC phases depending on the type of M transition metal (M are Ti and Cr) and on X (X are Ga and A1) was reported. The calculations are performed using the pseudo-potential plane-wave approach in both the local density and generalized gradient approximations. The elastic constants are calculated using the static finite strain technique. Features such as structural and elastic parameters, Debye tem- perature, sound velocities and their pressure dependence have been investigated. In agreement with experimental and previous theoretical findings, it is found that the compressibility along a and c axis depends on the valence electron concentration (VEC). Correlations revealing the governing role of the X and M elements on the machinability indices of the material have been examined. The electronic properties have been discussed in terms of chemical bonding showing that bonding is due to Md-Cp and Md-Xp hybridizations. M-C bonds are stiffer than M-X ones and A1-Ti (Cr-C) bonds are stiffer than those corresponding to Ti-C (A1-Cr). It is shown that the stiffness of the M-X and M-C bonds increases with increasing the number of VEC. 展开更多
关键词 m2XC phases ab initio Pressure effect band structures
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