High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian purposes.Recently,the gapless electronic structures and unique optoelectrical properties have made the two...High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian purposes.Recently,the gapless electronic structures and unique optoelectrical properties have made the two-dimensional(2D)topological semimetals promising candidates for the realization of multifunctional optoelectronic devices.Here,we demonstrated the in-situ construction of high-performance 1T’-MoTe_(2)/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer.The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron,an ultrafast response time of~160 ns,and a large specific detectivity of over 109 Jones in mid-infrared(MIR)range surpasses that of most 2D materials-based IR sensors,approaching the performance of commercial IR photodiodes.The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature.All these outstanding detection features have enabled the demonstration of position-sensitive detection applications.It demonstrates an exceptional position sensitivity of 14.9 mV/mm,an outstanding nonlinearity of 6.44%,and commendable trajectory tracking and optoelectronic demodulation capabilities.This study not only offers a promising route towards room-temperature MIR optoelectronic applications,but also demonstrates a great potential for application in optical sensing systems.展开更多
基金the National Natural Science Foundation of China(Nos.U22A20138,62374149,and 62375279)the Collaborative Innovation Center of Suzhou Nano Science&Technology.The authors are grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).
文摘High-sensitivity room-temperature multi-dimensional infrared(IR)detection is crucial for military and civilian purposes.Recently,the gapless electronic structures and unique optoelectrical properties have made the two-dimensional(2D)topological semimetals promising candidates for the realization of multifunctional optoelectronic devices.Here,we demonstrated the in-situ construction of high-performance 1T’-MoTe_(2)/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer.The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron,an ultrafast response time of~160 ns,and a large specific detectivity of over 109 Jones in mid-infrared(MIR)range surpasses that of most 2D materials-based IR sensors,approaching the performance of commercial IR photodiodes.The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature.All these outstanding detection features have enabled the demonstration of position-sensitive detection applications.It demonstrates an exceptional position sensitivity of 14.9 mV/mm,an outstanding nonlinearity of 6.44%,and commendable trajectory tracking and optoelectronic demodulation capabilities.This study not only offers a promising route towards room-temperature MIR optoelectronic applications,but also demonstrates a great potential for application in optical sensing systems.
