Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/Co structure

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic devices.This study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/Co/TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer layer.The field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 nm.This phenomenon is attributed to the lateral anisotropy gradient of the Co layer,which is induced by the wedge-shaped HfO_(2)buffer layer.The thickness gradient of HfO_(2)along the wedge creates a corresponding lateral anisotropy gradient in the Co layer,correlating with the switching ratio.These findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

Single-atom catalysts based on polarization switching of ferroelectric In_(2)Se_(3) for N_(2) reduction

The polarization switching plays a crucial role in controlling the final products in the catalytic pro-cess.The effect of polarization orientation on nitrogen reduction was investigated by anchoring transition metal atoms to form active centers on ferroelectric material In_(2)Se_(3).During the polariza-tion switching process,the difference in surface electrostatic potential leads to a redistribution of electronic states.This affects the interaction strength between the adsorbed small molecules and the catalyst substrate,thereby altering the reaction barrier.In addition,the surface states must be considered to prevent the adsorption of other small molecules(such as *O,*OH,and *H).Further-more,the V@↓-In_(2)Se_(3) possesses excellent catalytic properties,high electrochemical and thermody-namic stability,which facilitates the catalytic process.Machine learning also helps us further ex-plore the underlying mechanisms.The systematic investigation provides novel insights into the design and application of two-dimensional switchable ferroelectric catalysts for various chemical processes.

Variation analysis of ultimate pullout capacity of shallow horizontal strip anchor plate with 2-layer overlying soil based on nonlinear M-C failure criterion

Based on the nonlinear Mohr-Coulomb failure criterion and an associated flow rule,a kinematic admissible velocity field of failure mechanism of the 2-layer soil above a shallow horizontal strip anchor plate is constructed.The ultimate pull-out force and its corresponding failure mechanism through the upper bound limit analysis according to a variation principle are deduced.When the 2-layer overlying soil is degraded into single-layer soil,the model of ultimate pullout force could also be degraded into the model of single-layer soil.And the comparison between results of single-layer soil variation method and those calculated by rigid limit analysis method proves the correctness of our method.Based on that,the influence of changes of geotechnical parameters on ultimate pullout forces and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are analyzed.The results show that the ultimate pull-out force and failure mechanism of a shallow horizontal strip anchor with the 2-layer soil above are affected by the nonlinear geotechnical parameters greatly.Thus,it is very important to obtain the accurate geotechnical parameters of 2-layer soil for the evaluation of the ultimate pullout capacity of the anchor plate.

Methane dehydroaromatization with periodic CH_4-H_2 switch:A promising process for aromatics and hydrogen

Long-term stability test of Mo/HZSM-5-N catalysts（HZSM-5-N stands for nano-sized HZSM-5） in methane dehydroaromatization（MDA）reaction has been performed with periodic CH4-H2 switch at 1033-1073 K for more than 1000 h.During this test,methane conversion ranges from 13% to 16%,and mean yield to aromatics（i.e.benzene and naphthalene） exceeds 10%.N2-physisorption,XRD,NMR and TPO measurements were performed for the used Mo/HZSM-5 catalysts and coke deposition,and the results revealed that the periodic hydrogenation can effectively suppress coke deposition by removing the inert aromatic-type coke,thus ensuring Mo/HZSM-5 partly maintained its activity even in the presence of large amount of coke deposition.The effect of zeolite particle size on the catalytic activity was also explored,and the results showed that the nano-sized zeolite with low diffusion resistance performed better.It is recognized that the size effect was enhanced by reaction time,and it became more remarkable in a long-term MDA reaction even at a low space velocity.

Resistive Switching Memory of TiO2 Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

The resistive switching characteristics of TiO_2 nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO_2 nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO_2 nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10~4 s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO_2 nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based Re RAM device in the future.

GPCR A2AAR Agonist Binding and Induced Conformation Changes of Functional Switches

Agonist binding of A2A adenosine receptor （A2AAR） shows protective effects against inflammatory and immune. Efforts are exerted in understanding the general mechanism and developing A2AAR selectively binding agonists. Using molecular dynamics （MD） simula- tions, we have studied the interactions between A2AAR and its agonist （adenosine）, and analyzed the induced dynamic behaviors of the receptor. Key residues interacting with adenosine are identified： A63^2.61,I66^2.64,V84^3.32,L85^3.33,T88^3.36,F168^5.29,M177^5.38,L249^6.51,H250^6.52 and N253^6.55 interacting with adenosine with affinities larger than 0.5 kcal/mol. Moreover, no interaction between adenosine and L167^5.28 is observed, which supports our previous findings that L1675^5.28 is an antagonist specific binding reside. The dynamic be- haviors of agonist bound A2AAR are found to be different from apo-A2AAR in three typical functional switches： （i） tight ＂ionic lock＂ forms in adenosine-A2AAR, but it is in equilibrium between formation and breakage in apo-A2AAR; （ii） the ＂rotamer toggle switch＂, T88^3.36/F242^6.44/W246^6.48, adopted different rotameric conformations in adenosin-A2AAR and apo-A2AAR; （iii） adenosine-A2AAR has a flexible intracellular loop 2 （IC2） and s-helical IC3, while apo-A2AAR preferred s-helical IC2 and flexible IC3. Our results indicate that agonist binding induced different conformational rearrangements of these characteristic functional switches in adenosine-A2AAR and apo-A2AAR.

Distributed H2/H∞ Filter Design for Discrete-Time Switched Systems

This paper addresses an infinite horizon distributed H2/H∞ filtering for discrete-time systems under conditions of bounded power and white stochastic signals. The filter algorithm is designed by computing a pair of gains namely the estimator and the coupling. Herein, we implement a filter to estimate unknown parameters such that the closed-loop multi-sensor accomplishes the desired performances of the proposed H2 and H∞ schemes over a finite horizon. A switched strategy is implemented to switch between the states once the operation conditions have changed due to disturbances. It is shown that the stability of the overall filtering-error system with H2/H∞ performance can be established if a piecewise-quadratic Lyapunov function is properly constructed. A simulation example is given to show the effectiveness of the proposed approach.

Peak of Electron Density in F2-Layer Parameters Variability at Quiet Days on Solar Minimum

This study deals with Peak of electron density in F2-layer sensibility scale during quiet time on solar minimum. Peaks of electron density in F2-layer (NmF2) values at the quietest days are compared to those carried out from the two nearest days (previous and following of quietest day). The study uses International Reference Ionosphere (IRI) for ionosphere modeling. The located station is Ouagadougou, in West Africa. Solar minimum of phase 22 is considered in this study. Using three core principles of ionosphere modeling under IRI running conditions, the study enables to carry out Peak of electron density in F2-layer values during the quietest days of the characteristic months for the four different seasons. These parameters are compared to those of the previous and the following of the quietest days (the day before and following each quietest selected day) at the same hour. The knowledge of NmF2 values at the quietest days and at the two nearest days enables to calculate the relative error that can be made on this parameter. This calculation highlights insignificant relative errors. This means that NmF2 values at the two nearest days of each quietest day on solar minimum can be used for simulating the quietest days’ behavior. NmF2 values obtained by running IRI model have good correlation with those carried out by Thermosphere-Ionosphere-Electrodynamics-General Circulation Model (TIEGCM).

“On-off”switch for H_(2)and O_(2)generation from HCOOH resp.H_(2)O_(2)

In spite of the numerous advances in the development of H_(2)and O_(2)evolutions upon water splitting,the separation of H_(2)from O_(2)still remains a severe challenge.Herein,the novel dual-functional nanocatalysts Pd/carbon nanosphere(CNS),obtained via immobilization of ultrafine Pd nanoparticles onto CNS,are developed and employed for both selective H_(2)generation from HCOOH dehydrogenation and O_(2)evolution from H_(2)O_(2)decomposition.In these reactions,the highest activities for Pd/CNS-800(i.e.,calcinated at 800℃)are 2478 h−1 and 993 min^(−1)for H_(2)and O_(2)evolution,respectively.The highly efficient and selective“on-off”switch for selective H_(2)generation from HCOOH is successfully realized by pH adjustment.This novel and highly efficient nanocatalyst Pd/CNS-800 not only provides new approaches for the promising application of HCOOH and H_(2)O_(2)as economic and safe H_(2)and O_(2)carriers,respectively,for fuel cells,but also promotes the development of“on-off”switch for on-demand H_(2)evolution.

Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sputtering

ZnMn_2O_4 films for resistance random access memory（RRAM） were fabricated with different device structures by magnetron sputtering. The effects of electrode on I-V characteristics, resistance switching behavior, endurance and retention characteristics of ZnMn_2O_4 films were investigated. The ZnMn_2O_4 films, using p-Si and Pt as bottom electrode, exhibit bipolar resistive switching（BRS） behavior dominated by the space-charge-limited conduction（SCLC） mechanism in the high resistance state（HRS） and the filament conduction mechanism in the low resistance state（LRS）, but the ZnMn_2O_4 films using n-Si as bottom electrodes exhibit both bipolar and unipolar resistive switching behaviors controlled by the Poole-Frenkel（P-F） conduction mechanism in both HRS and LRS. Ag/ZnMn_2O_4/p-Si device possesses the best endurance and retention characteristics, in which the number of stable repetition switching cycle is over 1000 and the retention time is longer than 106 seconds. However, the highest RHRS/R_（LRS） ratio of 104 and the lowest V_（ON） and V_（OFF） of 3.0 V have been observed in Ag/ZnMn_2O_4/Pt device. Though the Ag/ZnMn_2O_4/n-Si device also possesses the highest RHRS/R_（LRS） ratio of 104, but the highest values of V_（ON）,V_（OFF）, RHRS and R_（LRS）, as well as the poor endurance and retention characteristics.

Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si Heterostructure Devices for Nonvolatile Memory Applications

The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.

Resistance Switching Properties of Ag/Zn Mn_2O_4/p-Si Fabricated by Magnetron Sputtering for Resistance Random Access Memory

A resistance random access memory（RRAM） with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 fi lms was obtained between two well-defi ned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 10^3 orders of magnitude and up to about 10^3 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 10^6 seconds and the resistance ratio between two states remains higher than 10^3 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS（high resistance state） and LRS（low resistance state） were also studied by impedance spectroscopy.

Synthesis of Hymecromone Derivatives Containing Chiral 1,1'-Bi-2-naphthyl Moiety for Dual-mode Molecular Switch

Some hymecromone derivatives containing chiral 1,1'-bi-2-naphthyl moiety were synthesized and their photodimerizations were investigated. It was found that fluorescence intensity and optical rotation of the new chiral hymecromone derivatives could be regulated by light. This property has potential significance for developing a new type of dual-mode molecular switch.

Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Ag/ZnMn_2O_4/p^+-Si Device

ZnMn_2O_4 thin films were deposited by a sol-gel technique onto a p+-Si substrate, and a RRAM device with the Ag/ZnMn_2O_4/p^+-Si structure was fabricated. The microstructure of ZnMn_2O_4 films and the resistive switching behavior of Ag/ZnMn_2O_4/p^+-Si device were investigated. ZnMn_2O_4 thin films had a spinel structure after annealing at 650 °C for 1 h. The Ag/ZnMn_2O_4/p^+-Si device showed unipolar and/or bipolar resistive switching behavior, exhibiting different ION/IOFF ratio and switching endurance properties. In bipolar resistive switching, high-resistance-state(HRS) conduction was dominated by the space-charge-limited conduction mechanism, whereas the filament conduction mechanism dictated the low resistance state(LRS). For unipolar resistive switching, HRS and LRS were controlled by the filament conduction mechanism. For bipolar resistive switching, the conduction process can be explained by the space-charge region of the p-n junction.

A thermal conductivity switch via the reversible 2H–1T′phase transition in monolayer MoTe_(2)

The two-dimensional(2D)material-based thermal switch is attracting attention due to its novel applications,such as energy conversion and thermal management,in nanoscale devices.In this paper,we observed that the reversible 2H–1T′phase transition in MoTe_(2)is associated with about a fourfold/tenfold change in thermal conductivity along the X/Y direction by using first-principles calculations.This phenomenon can be profoundly understood by comparing the Mo–Te bonding strength between the two phases.The 2H-MoTe_(2)has one stronger bonding type,while 1T′-MoTe_(2)has three weaker types of bonds,suggesting bonding inhomogeneity in 1T′-MoTe_(2).Meanwhile,the bonding inhomogeneity can induce more scattering of vibration modes.The weaker bonding indicates a softer structure,resulting in lower phonon group velocity,a shorter phonon relaxation lifetime and larger Gr¨uneisen constants.The impact caused by the 2H to 1T′phase transition in MoTe_(2)hinders the propagation of phonons,thereby reducing thermal conductivity.Our study describes the possibility for the provision of the MoTe_(2)-based controllable and reversible thermal switch device.

Resistive switching properties of SnO_(2)nanowires fabricated by chemical vapor deposition

Resistive switching(RS)devices have great application prospects in the emerging memory field and neuromorphic field,but their stability and unclear RS mechanism limit their relevant applications.In this work,we construct a hydrogenated Au/SnO_(2)nanowire(NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum.We find that the Ion/Io ff ratio increases from 20 to 10^(4)when the read voltage decreases from 3.1 V to^(-1)V under the condition of electric field.Moreover,the rectification ratio can reach as high as 10^4owing to oxygen ion migration modulated by the electric field.The nanodevice also shows non-volatile resistive memory characteristic.The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO_(2)NW/Au device.Our results provide a strategy for designing high-performance memristive devices based on SnO_(2)NWs.

LD端面泵浦Tm:SrF_(2)电光调Q激光器

高掺杂浓度的Tm^(3+)增益介质能通过交叉弛豫过程提高激光器的量子效率,但同时也会增加能量上转换带来的损耗,从而限制激光器效率的进一步提升。对Tm:SrF_(2)晶体的荧光特性以及激光性能展开研究。在激光二极管(LD)端面泵浦下,实现最大功率2.99 W的自由运转输出,激光器的泵浦阈值为0.89 W,中心波长1851 nm,斜效率高达82.1%。采用KTP电光调Q开关演示了Tm:SrF_(2)激光器的电光调Q输出特性。在500 Hz重复频率下,获得了1.02 mJ的最大单脉冲能量,泵浦阈值为2.01 W,最短脉冲宽度为45 ns,对应峰值功率为22.67 kW。实验结果表明,基于LD泵浦的Tm:SrF_(2)激光器具有非常高的效率,有望成为中红外光学参量振荡器(OPO)和光学参量放大器(OPA)的理想泵浦源。

LD脉冲泵浦Er^(3+)/Yb^(3+):Lu_(2)Si_(2)O_(7)晶体百kHz激光器

目前1.5μm激光二极管(Laser Diode,LD)泵浦的铒镱共掺玻璃/晶体被动调Q微型激光器广泛应用于激光测距、激光雷达等领域。随着激光器输出重频的增加,玻璃面临突出的热效应问题,晶体的热导率是玻璃的10倍以上,有望能够实现比玻璃基质更高重频的激光输出。报道了一种通过LD脉冲端面泵浦Er^(3+)/Yb^(3+):Lu_(2)Si_(2)O_(7)晶体的百kHz人眼安全激光器。通过实验优化增益介质掺杂浓度和长度、泵浦光斑尺寸和调Q晶体初始透过率等实验参数,同时适当缩短脉宽,优化泵浦占空比,提高了输出重频的稳定性。最终获得了重频为100 kHz、单脉冲能量0.7μJ、脉冲宽度240 ns、光束质量M^(2)=1.61的1537 nm脉冲激光输出。实现了输出脉冲频率与泵浦的一致,保证了输出重频的稳定性,有效解决了输出重频具有随机性、不稳定、不可控等问题。

Characteristic analysis of CO_2 switching arcs under a DC current

The current interruption capability of a gas, when used in high voltage gas-blast circuit breakers,depends not only on its material properties but also the flow field since turbulence plays a dominant role in arc cooling during the interruption process. Based on available experimental results, a study of CO2 switching arcs under a DC（direct current） current in the model circuit breaker has been conducted to calibrate CO2 arc model and to analyse its electric and thermal property. Through detailed analysis of the results mechanisms responsible for the temperature distribution are identified and the domain energy transportation process of different region discussed. The present work provides significant coefficients for CO2 switching arc simulation and gives a better understanding of CO2 arc burning mechanisms.

Electron Bulk Surface Density Effect on Critical Frequency in the F2-Layer

Ionosphere layer is the atmosphere region which reflects radio waves for telecommunication. The density in particles in this layer influences the quality of communication. This study deals with the effects of Total Electron Contents (TEC) on the critical frequency of radio waves in the F2-layer. Total Electron Contents parameter symbolizes electron bulk surface density in ionosphere layer. Above critical frequency value in F2 layer (foF2), radio waves pass through ionosphere. The knowledge of this value enables to calibrate transmission frequencies. In this study, we consider TEC effects on foF2 under quiet time conditions during the maximum and the minimum of solar cycle 22, at Ouagadougou station, in West Africa. The study also considers the effects of seasons and the hourly variability of TEC and foF2. This work shows winter anomaly on foF2 and TEC on minimum and maximum of solar cycle phase respectively. Running International Reference Ionosphere (IRI) model enables to carry out the effects of TEC on foF2 by use of their monthly average values. This leads to a new approach to calibrate radio transmitters.