An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one p...An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.展开更多
We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well str...We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.展开更多
文摘An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.
文摘We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.
