目的探讨VDW(德国)Bee Fill 2in1热牙胶垂直加压根管充填系统的护理配合。方法 200例急慢性牙髓炎及根尖周炎患者,应用VDW(德国)Bee Fill 2in1热牙胶根管充填系统进行垂直加压充填根管,对术前做好患者用物及器械、仪器准备及检查;术中...目的探讨VDW(德国)Bee Fill 2in1热牙胶垂直加压根管充填系统的护理配合。方法 200例急慢性牙髓炎及根尖周炎患者,应用VDW(德国)Bee Fill 2in1热牙胶根管充填系统进行垂直加压充填根管,对术前做好患者用物及器械、仪器准备及检查;术中协助根管预备及根管充填护理、术后做好设备保养和用物整理和患者健康指导。结果 188例X线摄片显示热牙胶根管充填均匀致密。12例中8例根管欠充、4例根管有气泡不密合,都接受再次充填后,患者治疗满意,术后无并发症。结论热牙胶根管充填比传统的侧方加压根管充填具有更好的根管封闭效果。护理人员掌握操作程序,密切有序迅速的配合医生治疗全程,提高了临床治愈率和满意度。四手操作在口腔护理配合中具有高效率、高质量的优点。展开更多
Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our wo...Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.展开更多
The cyclic plastic straining electrode technique has been used to investigate the transient electrochemical behaviour of Fe-26Cr1Mo stainless steel in 1M H2SO4 solution at a passive potential.The influence of plastic ...The cyclic plastic straining electrode technique has been used to investigate the transient electrochemical behaviour of Fe-26Cr1Mo stainless steel in 1M H2SO4 solution at a passive potential.The influence of plastic strain amplitude and plastic strain rate on the dissolution current response was analysed. The experimental results showed that the transient current was dependent on the competitive process of the surface film rupture and repassivation of the new surface. The high plastic strain amplitude and the high plastic strain rate caused a change of electrochemical activity of specimen surface. In the condition of low strain amplitude and strain rate, the characteristics of current response was mainly relative tp the process of new surface repassivation.The competition kinetics has been analysed through the comparison of plastic strain rate and repassivating rate展开更多
In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with t...In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.展开更多
文摘目的探讨VDW(德国)Bee Fill 2in1热牙胶垂直加压根管充填系统的护理配合。方法 200例急慢性牙髓炎及根尖周炎患者,应用VDW(德国)Bee Fill 2in1热牙胶根管充填系统进行垂直加压充填根管,对术前做好患者用物及器械、仪器准备及检查;术中协助根管预备及根管充填护理、术后做好设备保养和用物整理和患者健康指导。结果 188例X线摄片显示热牙胶根管充填均匀致密。12例中8例根管欠充、4例根管有气泡不密合,都接受再次充填后,患者治疗满意,术后无并发症。结论热牙胶根管充填比传统的侧方加压根管充填具有更好的根管封闭效果。护理人员掌握操作程序,密切有序迅速的配合医生治疗全程,提高了临床治愈率和满意度。四手操作在口腔护理配合中具有高效率、高质量的优点。
文摘Usually a buffer layer of cadmium sulphide is used in high efficiency solar cells based on Cu(In,Ga)Se2(CIGS). Because of cadmium toxicity, many in-vestigations have been conducted to use Cd-free buffer layers. Our work focuses on this type of CIGS-based solar cells where CdS is replaced by a ZnS buffer layer. In this contribution, AFORS-HET software is used to simulate n-ZnO: Al/i-ZnO/n-ZnS/p-CIGS/Mo polycrystalline thin-film solar cell where the key parts are p-CIGS absorber layer and n-ZnS buffer layer. The characteristics of these key parts: thickness and Ga-content of the absorber layer, thickness of the buffer layer and doping concentrations of absorber and buffer layers have been investigated to optimize the conversion efficiency. We find a maximum conversion efficiency of 26% with a short-circuit current of 36.9 mA/cm2, an open circuit voltage of 824 mV, and a fill factor of 85.5%.
文摘The cyclic plastic straining electrode technique has been used to investigate the transient electrochemical behaviour of Fe-26Cr1Mo stainless steel in 1M H2SO4 solution at a passive potential.The influence of plastic strain amplitude and plastic strain rate on the dissolution current response was analysed. The experimental results showed that the transient current was dependent on the competitive process of the surface film rupture and repassivation of the new surface. The high plastic strain amplitude and the high plastic strain rate caused a change of electrochemical activity of specimen surface. In the condition of low strain amplitude and strain rate, the characteristics of current response was mainly relative tp the process of new surface repassivation.The competition kinetics has been analysed through the comparison of plastic strain rate and repassivating rate
基金supported by Korea Research Institute of Standards and Science(KRISS–2019–GP2019-0014)。
文摘In or Ga gradients in the Cu(In1-xGax)Se2(CIGS)absorbing layer lead to change the lattice parameters of the absorbing layer,giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell.We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction(GIXRD)technique,and then investigate the bandgap grading of the CIGS absorbing layer.When the glancing incident angle increased from 0.50 to 5.00°,the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3)to 5.6905(2)?,and 11.3917(3)to 11.2114(2)?,respectively.The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer.The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site.According to the results of the depth profile of the refined parameters using GIXRD data,the bandgap of the CIGS absorber layer was graded over a range of 1.222-1.532 eV.This approach allows to determine the In or Ga gradients in the CIGS absorbing layer,and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
