We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using tri...We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.展开更多
Mg PSZ ceramics doped with Y 2O 3 and CeO 2 was prepared using traditional processing method. The fine grain PSZ ceramics( d c10 μm) sintered at low temperature(1550 ℃) was obtained by means of composition ...Mg PSZ ceramics doped with Y 2O 3 and CeO 2 was prepared using traditional processing method. The fine grain PSZ ceramics( d c10 μm) sintered at low temperature(1550 ℃) was obtained by means of composition design. The effects of co stabilization of Y 2O 3, CeO 2 and annealing at 1100 ℃ on material composition, microstructure and mechanical properties were studied. The results show that Y 2O 3 and CeO 2 during annealing at 1100 ℃ can inhibit subeutectoid decomposition reaction effectively, and optimize nucleation and growth of t ZrO 2 precipitates in c ZrO 2 matrix phase. The materials show transgranular and intergranular fracture characteristics, and exhibit better mechanical properties owing to the cooperative effect of stress induced transformation toughening and microcrack toughening.展开更多
The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigate...The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.展开更多
The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epi...The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epitaxy,during which the single crystal phase can be obtained with Mn concentration less than 2%.Shubnikov-de Haas oscillation and quantum Hall effect are observed at low temperatures,and electrons are found to be the dominant carrier in the whole temperature range.Higher Mn content results in smaller lattice constant,lower electron mobility and larger effective band gap,while the carrier density seems to be unaffected by Mn-doping.Gating experiments show that Shubnikov-de Haas oscillation and quantum Hall effect are slightly modulated by electric field,which can be explained by the variation of electron density.Our results provide useful information for understanding the magnetic element doping effects on the transport properties of Cd3As2 films.展开更多
Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, str...Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.展开更多
Thermally stable Zr4+, Al3+, and Si4+ cations were incorporated into the lattice of CeO2 nano‐rods (i.e., CeO2‐NR) in order to improve the specific surface area. The undoped and Zr4+, Al3+, and Si4+ doped nano‐rods...Thermally stable Zr4+, Al3+, and Si4+ cations were incorporated into the lattice of CeO2 nano‐rods (i.e., CeO2‐NR) in order to improve the specific surface area. The undoped and Zr4+, Al3+, and Si4+ doped nano‐rods were used as supports to prepare MnOx/CeO2‐NR, MnOx/CZ‐NR, MnOx/CA‐NR, and MnOx/CS‐NR catalysts, respectively. The prepared supports and catalysts were comprehensively characterized by transmission electron microscopy (TEM), high‐resolution TEM, X‐ray diffraction, Raman and N2‐physisorption analyses, hydrogen temperature‐programmed reduction, ammonia temperature‐programmed desorption, in situ diffuse reflectance infrared Fourier‐transform spectroscopic analysis of the NH3 adsorption, and X‐ray photoelectron spectroscopy. Moreover, the catalytic performance and H2O+SO2 tolerance of these samples were evaluated through NH3‐selective catalytic reduction (NH3‐SCR) in the absence or presence of H2O and SO2. The obtained results show that the MnOx/CS‐NR catalyst exhibits the highest NOx conversion and the lowest N2O concentration, which result from the largest number of oxygen vacancies and acid sites, the highest Mn4+ content, and the lowest redox ability. The MnOx/CS‐NR catalyst also presents excellent resistance to H2O and SO2. All of these phenomena suggest that Si4+ is the optimal dopant for the MnOx/CeO2‐NR catalyst.展开更多
A series of V2O5‐WO3/TiO2‐ZrO2,V2O5‐WO3/TiO2‐CeO2,and V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalysts were synthesized to improve the selective catalytic reduction(SCR)performance and the K‐poisoning resistance of a V2O5‐W...A series of V2O5‐WO3/TiO2‐ZrO2,V2O5‐WO3/TiO2‐CeO2,and V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalysts were synthesized to improve the selective catalytic reduction(SCR)performance and the K‐poisoning resistance of a V2O5‐WO3/TiO2 catalyst.The physicochemical properties were investigated by using XRD,BET,NH3‐TPD,H2‐TPR,and XPS,and the catalytic performance and K‐poisoning resistance were evaluated via a NH3‐SCR model reaction.Ce^4+and Zr^4+co‐doping were found to enhance the conversion of NOx,and exhibit the best K‐poisoning resistance owing to the largest BET‐specific surface area,pore volume,and total acid site concentration,as well as the minimal effects on the surface acidity and redox ability from K poisoning.The V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalyst also presents outstanding H2O+SO2 tolerance.Finally,the in situ DRIFTS reveals that the NH3‐SCR reaction over the V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalyst follows an L‐H mechanism,and that K poisoning does not change the reaction mechanism.展开更多
Fe doped In2O3 samples （In1-xFex）2O3 （x=0, 0.05, 0.1, 0.2 and 0.3） on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In2O3 matrix is around 20%, abov...Fe doped In2O3 samples （In1-xFex）2O3 （x=0, 0.05, 0.1, 0.2 and 0.3） on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In2O3 matrix is around 20%, above which impurity phase can be observed. The transmittance of the samples with x=0, 0.05, 0.1 and 0.2 are above 80% in the visible region while the transimittance of the glass is 90%. The transmittance curves slightly red-shifts as x increasing. All of the samples except x=0 are ferromagnetic at room temperature. The highest saturation magnetization moment is reached in the sample x=0.2 with 330 emu/cm3, and the coercive force is 169 Oe which is also the largest in our samples. The results indicate that the addition of Fe ions could tune the structure, the ferromagnetism and optical property in the In2O3 matrix.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.51272250)the National Basic Research Program of China(Grant No.2011CBA00105)+1 种基金the National High Technology Research and Development Program of China(Grant No.2014AA032702)the Beijing Natural Science Foundation,China(Grant No.2152035)
文摘We report the thickness dependence of critical current density （Jc） in YBa2Cu3O7-x （YBCO） films with BaZrO3 （BZO） and Y2O3 additions grown on single crystal LaAlO3 substrates by metalorganic deposition using trifluoroacetates （TFA-MOD）. Comparing with pttre YBCO films, the Jc of BZO/Y2O3-doped YBCO films was significantly enhanced. It was also found that with the increase of the thickness of YBCO film from 0.25 μm to 1.5 μm, the Ic of BZO/Y2O3-doped YBCO film increased from 130 A/cm to 250 A/cm and yet Jc of YBCO film decreased from 6.5 MA/cm2 to 2.5 M A/cm2. The thick BZO/Y2O3-doped MOD-YBCO film showed lower Jc, which is mainly attributed to the formation of a-axis grains and pores.
文摘Mg PSZ ceramics doped with Y 2O 3 and CeO 2 was prepared using traditional processing method. The fine grain PSZ ceramics( d c10 μm) sintered at low temperature(1550 ℃) was obtained by means of composition design. The effects of co stabilization of Y 2O 3, CeO 2 and annealing at 1100 ℃ on material composition, microstructure and mechanical properties were studied. The results show that Y 2O 3 and CeO 2 during annealing at 1100 ℃ can inhibit subeutectoid decomposition reaction effectively, and optimize nucleation and growth of t ZrO 2 precipitates in c ZrO 2 matrix phase. The materials show transgranular and intergranular fracture characteristics, and exhibit better mechanical properties owing to the cooperative effect of stress induced transformation toughening and microcrack toughening.
基金financially supported by the National Natural Science Foundation of China (No. 50902006)the National High Technology Development 863 Program of China (No. 2009AA03Z428)National Student Innovative Experiment Plan
文摘The In 2 O 3 : W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 3 cm, highest carrier mobilityof 43.7 cm 2 V 1 s 1 and carrier concentration of 1.4×10 20 cm 3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.
基金supported by NSFC(Grants Nos.U1632264 and 11704374)the the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant Nos.XDB44000000 and QYZDY-SSW-JSC015)。
文摘The Mn doping effects on the gate-tunable transport properties of topological Dirac semimetal Cd3As2 films have been investigated.Mn-doped Cd3As2 films are directly grown on GaAs(111)B substrates by molecular-beam epitaxy,during which the single crystal phase can be obtained with Mn concentration less than 2%.Shubnikov-de Haas oscillation and quantum Hall effect are observed at low temperatures,and electrons are found to be the dominant carrier in the whole temperature range.Higher Mn content results in smaller lattice constant,lower electron mobility and larger effective band gap,while the carrier density seems to be unaffected by Mn-doping.Gating experiments show that Shubnikov-de Haas oscillation and quantum Hall effect are slightly modulated by electric field,which can be explained by the variation of electron density.Our results provide useful information for understanding the magnetic element doping effects on the transport properties of Cd3As2 films.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61076063,61340051,and 61306120)the Natural Science Foundation of Fujian Province,China(Grant No.2014J05073)
文摘Ag- and Sn-doped In2S3 thin films were deposited on glass substrates using the thermal evaporation technique. The doping was realized by thermal diffusion. The influences of Ag and Sn impurities on the electrical, structural, morphological, and optical properties of the In2S3 films were investigated. In all deposited samples, the x-ray diffraction spectra revealed the formation of cubic In2S3 phase. A significant increase in the crystallite size was observed after Ag doping,while the doping of Sn slightly decreased the crystallite size. The x-ray photoelectron spectroscopy verified the diffusion of Ag and Sn into the In2S3 films after annealing. The optical study illustrated that Ag doping resulted in a reduction of the optical band gap while Sn doping led to a widening of the gap. Optical properties were investigated to determine the optical constants. Besides, it was found that the resistivity decreases significantly either after Ag or Sn incorporation. The study demonstrates that the Sn-doped In2S3 thin films are more suitable for buffer layer application in solar cells than the Ag-doped In2S3 thin films.
基金supported by National Natural Science Foundation of China (21876168, 21507130)Youth Innovation Promotion Association of CAS (2019376)the Chongqing Science & Technology Commission (cstc2016jcyjA0070, cstckjcxljrc13)~~
文摘Thermally stable Zr4+, Al3+, and Si4+ cations were incorporated into the lattice of CeO2 nano‐rods (i.e., CeO2‐NR) in order to improve the specific surface area. The undoped and Zr4+, Al3+, and Si4+ doped nano‐rods were used as supports to prepare MnOx/CeO2‐NR, MnOx/CZ‐NR, MnOx/CA‐NR, and MnOx/CS‐NR catalysts, respectively. The prepared supports and catalysts were comprehensively characterized by transmission electron microscopy (TEM), high‐resolution TEM, X‐ray diffraction, Raman and N2‐physisorption analyses, hydrogen temperature‐programmed reduction, ammonia temperature‐programmed desorption, in situ diffuse reflectance infrared Fourier‐transform spectroscopic analysis of the NH3 adsorption, and X‐ray photoelectron spectroscopy. Moreover, the catalytic performance and H2O+SO2 tolerance of these samples were evaluated through NH3‐selective catalytic reduction (NH3‐SCR) in the absence or presence of H2O and SO2. The obtained results show that the MnOx/CS‐NR catalyst exhibits the highest NOx conversion and the lowest N2O concentration, which result from the largest number of oxygen vacancies and acid sites, the highest Mn4+ content, and the lowest redox ability. The MnOx/CS‐NR catalyst also presents excellent resistance to H2O and SO2. All of these phenomena suggest that Si4+ is the optimal dopant for the MnOx/CeO2‐NR catalyst.
基金supported by the National Natural Science Foundation of China(21876168,21507130)the Key Projects for Common Key Technology Innovation in Key Industries in Chongqing(cstc2016zdcy-ztzx0020-01)+2 种基金the Chongqing Science&Technology Commission(cstc2016jcyjA0070,cstckjcxljrc13)the Open Project Program of Chongqing Key Laboratory of Catalysis and Functional Organic Molecules from Chongqing Technology and Business University(1456029)the Graduate Innovation Project of Chongqing Technology and Business University(yjscxx201803-028-22)~~
文摘A series of V2O5‐WO3/TiO2‐ZrO2,V2O5‐WO3/TiO2‐CeO2,and V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalysts were synthesized to improve the selective catalytic reduction(SCR)performance and the K‐poisoning resistance of a V2O5‐WO3/TiO2 catalyst.The physicochemical properties were investigated by using XRD,BET,NH3‐TPD,H2‐TPR,and XPS,and the catalytic performance and K‐poisoning resistance were evaluated via a NH3‐SCR model reaction.Ce^4+and Zr^4+co‐doping were found to enhance the conversion of NOx,and exhibit the best K‐poisoning resistance owing to the largest BET‐specific surface area,pore volume,and total acid site concentration,as well as the minimal effects on the surface acidity and redox ability from K poisoning.The V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalyst also presents outstanding H2O+SO2 tolerance.Finally,the in situ DRIFTS reveals that the NH3‐SCR reaction over the V2O5‐WO3/TiO2‐CeO2‐ZrO2 catalyst follows an L‐H mechanism,and that K poisoning does not change the reaction mechanism.
基金Funded by the Program for New Century Excellent Talents in University (NCET-05-0659)
文摘Fe doped In2O3 samples （In1-xFex）2O3 （x=0, 0.05, 0.1, 0.2 and 0.3） on glass substrate were prepared by sol-gel method. The XRD results demonstrate that the solubility of Fe ions in In2O3 matrix is around 20%, above which impurity phase can be observed. The transmittance of the samples with x=0, 0.05, 0.1 and 0.2 are above 80% in the visible region while the transimittance of the glass is 90%. The transmittance curves slightly red-shifts as x increasing. All of the samples except x=0 are ferromagnetic at room temperature. The highest saturation magnetization moment is reached in the sample x=0.2 with 330 emu/cm3, and the coercive force is 169 Oe which is also the largest in our samples. The results indicate that the addition of Fe ions could tune the structure, the ferromagnetism and optical property in the In2O3 matrix.
