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Robustness self-testing of states and measurements in the prepare-and-measure scenario with 3 → 1 random access code
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作者 魏士慧 郭奋卓 +1 位作者 李新慧 温巧燕 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第7期144-151,共8页
Recently, Tavakoli et al.proposed a self-testing scheme in the prepare-and-measure scenario, showing that self-testing is not necessarily based on entanglement and violation of a Bell inequality [Phys.Rev.A 98 062307(... Recently, Tavakoli et al.proposed a self-testing scheme in the prepare-and-measure scenario, showing that self-testing is not necessarily based on entanglement and violation of a Bell inequality [Phys.Rev.A 98 062307(2018)].They realized the self-testing of preparations and measurements in an N → 1(N ≥ 2) random access code(RAC), and provided robustness bounds in a 2 → 1 RAC.Since all N → 1 RACs with shared randomness are combinations of 2 → 1 and 3 → 1 RACs, the3 → 1 RAC is just as important as the 2 → 1 RAC.In this paper, we find a set of preparations and measurements in the3 → 1 RAC, and use them to complete the robustness self-testing analysis in the prepare-and-measure scenario.The method is robust to small but inevitable experimental errors. 展开更多
关键词 ROBUSTNESS SELF-TESTING prepare-and-measure SCENARIO 3 1 random access code
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铋掺杂对SrTiO_3薄膜微观结构及阻变行为的影响 被引量:2
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作者 张文博 王华 +3 位作者 许积文 刘国保 谢航 杨玲 《材料导报》 EI CAS CSCD 北大核心 2018年第11期1932-1937,共6页
采用溶胶-凝胶及快速退火工艺在p+-Si上制备了Bi掺杂SrTiO_3薄膜,构建了Ag/Sr_(1-x)Bi_xTiO_3/p+-Si结构阻变器件,研究了Bi掺杂量对薄膜微观结构、器件阻变行为及特性的影响。结果表明:Bi掺杂量较低时并未改变Sr_(1-x)Bi_xTiO_3薄膜的... 采用溶胶-凝胶及快速退火工艺在p+-Si上制备了Bi掺杂SrTiO_3薄膜,构建了Ag/Sr_(1-x)Bi_xTiO_3/p+-Si结构阻变器件,研究了Bi掺杂量对薄膜微观结构、器件阻变行为及特性的影响。结果表明:Bi掺杂量较低时并未改变Sr_(1-x)Bi_xTiO_3薄膜的相结构,但随着掺杂比例的增大,晶粒尺寸也明显增大,当掺杂量x=0.16时,有Bi4SrTi4O15及TiO2相形成;不同Bi掺杂量的Ag/Sr_(1-x)Bi_xTiO_3/p+-Si器件均呈现出双极性阻变特性,且有明显的多级阻变行为。随Bi掺杂量的增加,器件的阻变性能逐步提高,当x=0.12时器件的高、低阻态电阻比值最大,达到105左右,并且在2 000次可逆循环测试下,高、低阻态电阻比未出现衰减,表现出良好的抗疲劳特性,但当掺杂量x达到或超过0.16后,器件的性能呈下降趋势。Bi掺杂量的增大会导致器件高阻态时的导电机制从空间电荷效应(SCLC)导电机制(x<0.16)转变为肖特基势垒发射(x=0.16)。器件在低阻态下均遵循欧姆导电机制。 展开更多
关键词 溶胶-凝胶 钛酸锶薄膜 Ag/Sr1-xBixTiO3/p+-Si 铋掺杂 阻变特性 阻变存储器(RRAM)
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