B_(2)O_(3)-Zn O-SiO_(2)(BZS)glass containing Cu O with excellent acid resistance,wetting properties,and high-temperature sintering density was prepared by high temperature melting method and then applied in copper ter...B_(2)O_(3)-Zn O-SiO_(2)(BZS)glass containing Cu O with excellent acid resistance,wetting properties,and high-temperature sintering density was prepared by high temperature melting method and then applied in copper terminal electrode for multilayer ceramic capacitors(MLCC)applications.The structure and property characterization of B_(2)O_(3)-Zn O-SiO_(2)glass,including X-ray diffraction,FTIR,scanning electron microscopy,high-temperature microscopy,and differential scanning calorimetry,indicated that the addition of CuO improved the glass’s acid resistance and glass-forming ability.The wettability and acid resistance of this glass were found to be excellent when CuO content was 1.50 wt%.Compared to BZS glass,the CuO-added glass exhibited excellent wettability to copper powder and corrosion resistance to the plating solution.The sintered copper electrode films prepared using the glass with CuO addition had better densification and lower sintering temperature of 750℃.Further analysis of the sintering mechanism reveals that the flowability and wettability of the glass significantly impact the sintering densification of the copper terminal electrodes.展开更多
Palladium-catalyzed the Sonogashira coupling reaction of 3-halogen-2-aminopyridines 1 with terminal alkynes 2 afforded the corresponding 21 target products 3a-3u in the presence of palladium catalyst. The structure of...Palladium-catalyzed the Sonogashira coupling reaction of 3-halogen-2-aminopyridines 1 with terminal alkynes 2 afforded the corresponding 21 target products 3a-3u in the presence of palladium catalyst. The structure of target products 3a-3u was confirmed and characterized by 1H NMR, 13C NMR, and HRMS. The influences of different kinds of catalyst loading, bases, substrates and temperature were also investigated. Under the optimized conditions, including 2.5 mol% Pd?(CF3COO)2, 5 mol% PPh3 and 5 mol% CuI as additive, 1 mL Et3N, substrate 1 with terminal alkynes 2 for the cross-coupling reactions at 100°C for 3 h in DMF afforded the corresponding products of 2-amino-3-alkynylpyridines 3 in moderate to excellent yields (72%?-?96%). The present methodology has provided an effective synthetic method including operational convenience, high efficiency and wide-application.展开更多
In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field dist...In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.展开更多
Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and stan...Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and standard electrical characterization methods.It is found that,compared with La2O3/Al2O3 nanolaminates with LaOx as termination,lower interface trap density,less current leakage spots,and higher breakdown voltage are obtained in the La2O3/Al2O3 nanolaminates with AlOx as termination after annealing.A clear promotion of interface silicate layer is observed for La2O3/Al2O3 nanolaminates with AlOx as termination compared with LaOx as termination under the same annealing condition.In addition,the current conduction mechanism in La2O3/Al2O3 nanolaminates is considered as the Poole-Frenkel conduction.All results indicate that the AlOx is a more appropriate termination to deposit La2O3/Al2O3 nanolaminates on Si substrate,which is useful for the high-κ process development.展开更多
Nicotiflorin is a flavonoid extracted from Carthamus tinctorius.Previous studies have shown its cerebral protective effect,but the mechanism is undefined.In this study,we aimed to determine whether nicotiflorin protec...Nicotiflorin is a flavonoid extracted from Carthamus tinctorius.Previous studies have shown its cerebral protective effect,but the mechanism is undefined.In this study,we aimed to determine whether nicotiflorin protects against cerebral ischemia/reperfusion injury-induced apoptosis through the JAK2/STAT3 pathway.The cerebral ischemia/reperfusion injury model was established by middle cerebral artery occlusion/reperfusion.Nicotiflorin（10 mg/kg） was administered by tail vein injection.Cell apoptosis in the ischemic cerebral cortex was examined by hematoxylin-eosin staining and terminal deoxynucleotidyl transferase d UTP nick end labeling assay.Bcl-2 and Bax expression levels in ischemic cerebral cortex were examined by immunohistochemial staining.Additionally,p-JAK2,p-STAT3,Bcl-2,Bax,and caspase-3 levels in ischemic cerebral cortex were examined by western blot assay.Nicotiflorin altered the shape and structure of injured neurons,decreased the number of apoptotic cells,down-regulates expression of p-JAK2,p-STAT3,caspase-3,and Bax,decreased Bax immunoredactivity,and increased Bcl-2 protein expression and immunoreactivity.These results suggest that nicotiflorin protects against cerebral ischemia/reperfusion injury-induced apoptosis via the JAK2/STAT3 pathway.展开更多
β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including ad...β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.Characteristic device properties including onresistance,breakdown voltage,rectification ratio,dynamic switching,and nonideal effects are summarized for the different devices.Notable results on the high-temperature resilience of β-Ga_(2)O_(3) Schottky diodes,together with the enabling thermal packaging solutions,are also presented.展开更多
This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bott...This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.展开更多
基金the National Natural Science Foundation of China(Nos.51372179,51772224)the Open Project Foundation of Guangdong Fenghua Advanced Technology(No.FHR-JS-202011024)。
文摘B_(2)O_(3)-Zn O-SiO_(2)(BZS)glass containing Cu O with excellent acid resistance,wetting properties,and high-temperature sintering density was prepared by high temperature melting method and then applied in copper terminal electrode for multilayer ceramic capacitors(MLCC)applications.The structure and property characterization of B_(2)O_(3)-Zn O-SiO_(2)glass,including X-ray diffraction,FTIR,scanning electron microscopy,high-temperature microscopy,and differential scanning calorimetry,indicated that the addition of CuO improved the glass’s acid resistance and glass-forming ability.The wettability and acid resistance of this glass were found to be excellent when CuO content was 1.50 wt%.Compared to BZS glass,the CuO-added glass exhibited excellent wettability to copper powder and corrosion resistance to the plating solution.The sintered copper electrode films prepared using the glass with CuO addition had better densification and lower sintering temperature of 750℃.Further analysis of the sintering mechanism reveals that the flowability and wettability of the glass significantly impact the sintering densification of the copper terminal electrodes.
文摘Palladium-catalyzed the Sonogashira coupling reaction of 3-halogen-2-aminopyridines 1 with terminal alkynes 2 afforded the corresponding 21 target products 3a-3u in the presence of palladium catalyst. The structure of target products 3a-3u was confirmed and characterized by 1H NMR, 13C NMR, and HRMS. The influences of different kinds of catalyst loading, bases, substrates and temperature were also investigated. Under the optimized conditions, including 2.5 mol% Pd?(CF3COO)2, 5 mol% PPh3 and 5 mol% CuI as additive, 1 mL Et3N, substrate 1 with terminal alkynes 2 for the cross-coupling reactions at 100°C for 3 h in DMF afforded the corresponding products of 2-amino-3-alkynylpyridines 3 in moderate to excellent yields (72%?-?96%). The present methodology has provided an effective synthetic method including operational convenience, high efficiency and wide-application.
基金Project supported by the Research Fund of Low Cost Fabrication of GaN Power Devices and System Integration,China(Grant No.JCYJ20160226192639004)the Research Fund of AlGaN HEMT MEMS Sensor for Work in Extreme Environment,China(Grant No.JCYJ20170412153356899)the Research Fund of Reliability Mechanism and Circuit Simulation of GaN HEMT,China(Grant No.2017A050506002)
文摘In this work, the field plate termination is studied for Ga2O3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated.It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2and Al2O3, but increases in HfO2.Furthermore, it is found that SiO2and HfO2are suitable for the 600 V rate Ga2O3SBD, and Al2O3is suitable for both600 V and 1200 V rate Ga2O3SBD. In addition, the comparison of Ga2O3SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61604016 and 51802025)China Postdoctoral Science Foundation(Grant No.2017M613028)+1 种基金the Fundamental Research Funds for the Central Universities,China(Grant Nos.300102319209 and 300102310501)the Innovation,and Entrepreneurship Training Program for Undergraduates(Grant Nos.202010710231 and 201910710564).
文摘Effects of initial surface termination on electrical characteristics of La2O3/Al2O3 nanolaminates deposited by atomic layer deposition are studied by conductive atomic force microscopy working in contact mode and standard electrical characterization methods.It is found that,compared with La2O3/Al2O3 nanolaminates with LaOx as termination,lower interface trap density,less current leakage spots,and higher breakdown voltage are obtained in the La2O3/Al2O3 nanolaminates with AlOx as termination after annealing.A clear promotion of interface silicate layer is observed for La2O3/Al2O3 nanolaminates with AlOx as termination compared with LaOx as termination under the same annealing condition.In addition,the current conduction mechanism in La2O3/Al2O3 nanolaminates is considered as the Poole-Frenkel conduction.All results indicate that the AlOx is a more appropriate termination to deposit La2O3/Al2O3 nanolaminates on Si substrate,which is useful for the high-κ process development.
基金financially supported by the Natural Science Foundation of Education Department of Sichuan Province of China,No.14ZB0152the Joint Research Program of Luzhou and Southwest Medical University,in China,No.14JC0120
文摘Nicotiflorin is a flavonoid extracted from Carthamus tinctorius.Previous studies have shown its cerebral protective effect,but the mechanism is undefined.In this study,we aimed to determine whether nicotiflorin protects against cerebral ischemia/reperfusion injury-induced apoptosis through the JAK2/STAT3 pathway.The cerebral ischemia/reperfusion injury model was established by middle cerebral artery occlusion/reperfusion.Nicotiflorin（10 mg/kg） was administered by tail vein injection.Cell apoptosis in the ischemic cerebral cortex was examined by hematoxylin-eosin staining and terminal deoxynucleotidyl transferase d UTP nick end labeling assay.Bcl-2 and Bax expression levels in ischemic cerebral cortex were examined by immunohistochemial staining.Additionally,p-JAK2,p-STAT3,Bcl-2,Bax,and caspase-3 levels in ischemic cerebral cortex were examined by western blot assay.Nicotiflorin altered the shape and structure of injured neurons,decreased the number of apoptotic cells,down-regulates expression of p-JAK2,p-STAT3,caspase-3,and Bax,decreased Bax immunoredactivity,and increased Bcl-2 protein expression and immunoreactivity.These results suggest that nicotiflorin protects against cerebral ischemia/reperfusion injury-induced apoptosis via the JAK2/STAT3 pathway.
文摘β-Ga_(2)O_(3) Schottky barrier diodes have undergone rapid progress in research and development for power electronic applications.This paper reviews state-of-the-art β-Ga_(2)O_(3) rectifier technologies,including advanced diode architectures that have enabled lower reverse leakage current via the reduced-surface-field effect.Characteristic device properties including onresistance,breakdown voltage,rectification ratio,dynamic switching,and nonideal effects are summarized for the different devices.Notable results on the high-temperature resilience of β-Ga_(2)O_(3) Schottky diodes,together with the enabling thermal packaging solutions,are also presented.
基金supported by the National Natural Science Foundation of China under Grant U21A20503.
文摘This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.
