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论单调递减迭代根的存在性(英文) 被引量:1
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作者 刘新和 《中山大学研究生学刊(自然科学与医学版)》 1998年第1期6-10,共5页
设I=[0,1],0<a<b<1,记φ_(ab)≡{F∈C^0(1):F|[0,a]和F|[b,1]严格单调递增且F在[a,b]恒取常值}。记F_(ab)={F∈φ_(ab):Fix(F)∩[(0,a)∪(b,1)]=φ)。本文讨论了F∈φ_(ab)\F_(ab)有单调递减迭代根的充要条件。
关键词 迭代根 连续自映射 不动点 1991(AMS)58F08 39B22 39b10
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CRYSTALLIZATION OF Fe_(38)Ni_(39)Si_(10)B_(13) METALLIC GLASS UNDER HELIUM ION IRRADIATION
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《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 1995年第3期204-208,共5页
he crystallization features of Fe38Hi39Si10B13 metallic glass under 100 keV and 6μA/cm2 helium ion irradiation with different doses are reported. It is found that the Fe38 Ni39Si10 B13 metallic glass crystallized und... he crystallization features of Fe38Hi39Si10B13 metallic glass under 100 keV and 6μA/cm2 helium ion irradiation with different doses are reported. It is found that the Fe38 Ni39Si10 B13 metallic glass crystallized under the helium ion irradiation at the temperature lower than the ordinary thermal crystallization temperature. The preferential precipitation phase is FeSi, and followed by the eutectic phase α-Fe. The critical dose for the formation of helium bubbles in the material is around 5x10 ̄16/cm2. The sensitivity of crystallization due to the temperature rising under helium ion irradiation and the mechanism of the sequence of precipitated phase are briefly discussed. 展开更多
关键词 Fe38Ni39Si10B13 metallic glass CRYSTALLIZATION HELIUM ion irradiation
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