Integrated 3D Fan-out Package of RF Microsystem and Antenna for 5G Communications

A 3D fan-out packaging method for the integration of 5G communication RF microsystem and antenna is studied.First of all,through the double-sided wiring technology on the glass wafer,the fabrication of 5G antenna array is realized.Then the low power devices such as through silicon via(TSV)transfer chips,filters and antenna tuners are flip-welded on the glass wafer,and the glass wafer is reformed into a wafer permanently bonded with glass and resin by the injection molding process with resin material.Finally,the thinning resin surface leaks out of the TSV transfer chip,the rewiring is carried out on the resin surface,and then the power amplifier,low-noise amplifier,power management and other devices are flip-welded on the resin wafer surface.A ball grid array(BGA)is implanted to form the final package.The loss of the RF transmission line is measured by using the RF millimeter wave probe table.The results show that the RF transmission loss from the chip end to the antenna end in the fan-out package is very small,and it is only 0.26 dB/mm when working in 60 GHz.A slot coupling antenna is designed on the glass wafer.The antenna can operate at 60 GHz and the maximum gain can reach 6 dB within the working bandwidth.This demonstration successfully provides a feasible solution for the 3D fan-out integration of RF microsystem and antenna in 5G communications.

34 GHz Bandpass Filter for Low-temperature Co-fired Ceramic System-in-Package Application

Modern electronic circuit requires compact,multifunctional technology in communication systems.However,it is very difficult due to the limitations in passive component miniaturization and the complication of fabrication process.The bandpass filter is one of the most important passive components in millimeter（mm）-wave communication system,attracting significant interest in three-dimension（3D） miniaturized design,which is few reported.In this paper,a bandpass filter structure using low-temperature co-fired ceramic（LTCC） technology,which is fully integrated in a system-in package（SIP） communication module,is presented for miniaturized and high reliable mm-wave application.The bandpass filter with 3D end-coupled microstrip resonators is implemented in order to achieve a high performance bandwidth characteristic.Specifically,all of the resonators are embedded into different ceramic layers to decrease the insertion loss and enhance the out-of-band rejection performance by optimizing the coupling coefficient and the coupling strength.A fence structure,which is formed by metal-filled via array with the gap less than quarter wavelength,is placed around the embedded bandpass filter to avoid electromagnetic（EM） interference problem in multilayer structure.This structural model is validated through actual LTCC process.The bandpass filter is successfully manufactured by modifying the co-fireablity characteristics,adjusting the sintering profile,releasing the interfacial stress,and reducing the shrinkage mismatch with different materials.Measured results show good performance and agree well with the high frequency EM full wave simulation.The influence of layer thickness and dielectric constant on the frequency response in fabricated process is analyzed,where thicker ceramic sheets let the filter response shift to higher frequency.Moreover,measured S-parameters denote the center frequency is also strongly influenced by the variation of ceramic material＇s dielectric constants.By analyzing the relationship between the characteristics of the ceramic tape and the center frequency of the filter,both theoretical and experimental data are accumulated for broadening application filed.With the coupling resonators embedded into the ceramic layers,the bandpass filter exhibits advantages of small size and high reliability compared to conventional planar filter structure,which makes the bandpass filter suitable for SIP communicational application.

3D设计技术在SiP中的应用

SiP(System-in-Package)系统级封装技术是最新的微电子封装和系统集成技术,目前已成为电子技术发展的热点。SiP最鲜明的特点就是在封装中采用了3D(Three Dimensions)技术,通过3D技术,可以实现更高的系统集成度,在更小的面积内封装更多的芯片。从设计角度出发,介绍了应用在SiP中的3D设计技术,包括3D基板设计技术和3D组装设计技术,阐述了3D设计的具体思路和方法,可供工程师在设计3D SiP时参考。

A transceiver frequency conversion module based on 3D micropackaging technology

The idea of Ku-band transceiver frequency conversion module design based on 3D micropackaging technology is proposed. By using the double frequency conversion technology,the dual transceiver circuit from Ku-band to L-band is realized by combining with the local oscillator and the power control circuit to complete functions such as amplification, filtering and gain. In order to achieve the performance optimization and a high level of integration of the Ku-band monolithic microwave integrated circuits(MMIC) operating chip, the 3 D vertical interconnection micro-assembly technology is used. By stacking solder balls on the printed circuit board(PCB), the technology decreases the volume of the original transceiver to a miniaturized module. The module has a good electromagnetic compatibility through special structure designs. This module has the characteristics of miniaturization, low power consumption and high density, which is suitable for popularization in practical application.

Design and characterization of a 3D encapsulation with silicon vias for radio frequency micro-electromechanical system resonator

In this paper, we present a three-dimensional（3D） vacuum packaging technique at a wafer level for a radio frequency micro-electromechanical system（RF MEMS） resonator, in which low-loss silicon vias is used to transmit RF signals.Au–Sn solder bonding is adopted to provide a vacuum encapsulation as well as electrical conductions. A RF model of the encapsulation cap is established to evaluate the parasitic effect of the packaging, which provides an effective design solution of 3D RF MEMS encapsulation. With the proposed packaging structure, the signal-to-background ratio（SBR） of 24 dB is achieved, as well as the quality factor（Q-factor） of the resonator increases from 8000 to 10400 after packaging.The packaged resonator has a linear frequency–temperature（ f –T） characteristic in a temperature range between 0℃ and 100℃. And the package shows favorable long-term stability of the Q-factor over 200 days, which indicates that the package has excellent hermeticity. Furthermore, the average shear strength is measured to be 43.58 MPa among 10 samples.

一种宽带高隔离度2×4开关矩阵的3D模块设计

设计的开关矩阵3D模块采用球栅阵列(Ball Grid Array,BGA)植球工艺将上下2层陶瓷基板进行互联,以此实现三维电路结构。在需要对多种元器件进行布局和复杂布线的情况下,采用多层陶瓷基板来构建系统级封装(System In Package,SIP),更易于实现开关矩阵的强大功能。该3D模块开关矩阵的体积为21 mm×16 mm×3.6 mm,采用3D SIP集成技术解决了宽带射频信号的垂直互联、高密度集成、通道隔离度等难题,实现了对宽带信号的开关切换,可以同时实现4个输出端口对2个输入激励的任意切换。与传统的开关矩阵相比,该模块具有体积小、重量轻以及成本低等优点,可以广泛用于功分网络及其他微波系统的一体化、小型化设计。

SiP/三维(3D)安装技术的最新动向和今后的发展

概述了二维(2D)安装技术、SiP/三维(3D)安装技术和嵌入基板安装技术的最新动向和今后的展开。

三维电镀陶瓷基板激光封焊技术

气密封装是推动电子器件高可靠发展的一项重要技术,传统气密封装技术存在焊接温度高、热冲击大、应用范围窄等问题,无法满足三维电镀陶瓷基板气密封装要求。本文结合脉冲激光焊接的技术优势,研究了脉冲激光焊接三维电镀陶瓷基板实现气密封装,重点探讨了焊接过程中脉冲激光与材料相互作用模式,分析了焊接样品界面微观形貌、气密性、力学性能等。研究表明,焊接金属区裂纹的出现与基底金属铜向可伐侧的扩散密切相关;焊接过程稳定、焊接熔深小的热传导模式和过渡模式可以避免焊接裂纹出现。通过试验优化了焊接工艺参数,当激光峰值功率为120 W、脉冲宽度为1 ms、重叠率为80%时,三维陶瓷基板腔体结构获得了最佳高气密性,泄漏率为5.2×10^(-10)Pa·m^(3)/s,接头剪切强度为278.06 MPa,满足第三代半导体器件高可靠气密封装需求。

3D封装与硅通孔(TSV)工艺技术

在IC制造技术受到物理极限挑战的今天,3D封装技术越来越成为了微电子行业关注的热点。对3D封装技术结构特点、主流多层基板技术分类及其常见键合技术的发展作了论述,对过去几年国际上硅通孔(TSV)技术发展动态给与了重点的关注。尤其就硅通孔关键工艺技术如硅片减薄技术、通孔制造技术和键合技术等做了较详细介绍。同时展望了在强大需求牵引下2015年前后国际硅通孔技术进步的蓝图。

基于Java 3D的交互式虚拟包装机教学平台

利用计算机辅助教学来改善机械类专业课程的教学模式成为必然趋势。讨论了一种基于虚拟现实技术的新型教学模式——基于Java 3D的交互式虚拟教学平台。Java 3D是一种新的三维构建技术,它应用于交互式虚拟教学平台的开发,可极大提高虚拟教学的仿真效果和交互能力。以制袋式包装机为例描述了具体的应用开发过程,提出了开发虚拟教学平台的极具可操作性方案。

一种集成环行器的X波段三维异构集成T/R模组

微电子机械系统(MEMS)环行器被广泛应用于射频(RF)T/R微系统中,解决共用天线且收发隔离的问题。基于硅基三维(3D)异构集成工艺,设计了一种集成MEMS环行器的X波段T/R模组。该模组以高阻硅为介质基板,在硅基板上、下表面电镀金属图形,并堆叠多层硅基晶圆,在硅基模组上封装了集成无源器件(IPD)环行器,完成了多种微波芯片和MEMS环行器的系统级封装(SiP),将环行器紧凑集成在硅基T/R模组中。模组尺寸为12.0 mm×11.3 mm×2.0 mm。测试结果表明,在8~12 GHz频带内,模组接收通道增益为27 dB,接收通道噪声系数小于3.2 dB;发射通道增益为33 dB,饱和输出功率大于2 W。

TXV Technology:The cornerstone of 3D system-in-packaging

System-in-packaging(Si P) can realize the integration and miniaturization of electronic devices and it is significant to continue Moore’s law.Through-X-via(TXV) technology is the cornerstone of 3 D-SiP,which enables the vertical stacking and electrical interconnection of electronic devices.TXV originated from through-hole(TH) in PCB substrates and evolved in different substrate materials,such as silicon,glass,ceramic,and polymer.This work provides a comprehensive review of four distinguishing TXV technologies(through silicon via(TSV),through glass via(TGV),through ceramic via(TCV),and through mold via(TMV)),including the fabrication mechanisms,processes,and applications.Every TXV technology has unique characteristics and owns particular processes and functions.The process methods,key technologies,application fields,and advantages and disadvantages of each TXV technology were discussed.The cutting-edge through-hole process and development direction were reviewed.

试析“超越摩尔定律”的技术

分析研究了半导体技术有别于"摩尔定律"的另一个发展趋势,即"超越摩尔定律"的发展方向,重点讨论了"超越摩尔定律"范畴的形成、可用组成器件、支撑技术和异质集成设计技术等问题。

圆片级封装的研究进展

圆片级封装(wafer level package,WLP)因其在形状因数、电性能、低成本等方面的优势,近年来发展迅速。概述了WLP技术近几年的主要发展。首先回顾标准WLP结构,并从焊球结构等方面对其进行了可靠性分析。其次介绍了扩散式WLP工艺以及它的典型应用,并说明了扩散式WLP存在的一些可靠性问题。最后总结了WLP技术结合硅通孔技术(TSV)在三维叠层封装中的应用。

硅基异质集成技术发展趋势与进展

目前主流的异质集成技术有单片异质外延生长、外延层转移和小芯片微米级组装。硅基异质集成主要是指以硅材料为衬底集成异质材料(器件)所形成的集成电路技术。它首先在军用微电子研究中得到重视,并逐渐在民用领域扩展。硅基异质集成技术正处于芯片级集成向晶体管级集成的发展初期,已有关于晶体管级和亚晶体管级集成的报道。本文重点研究了单片三维集成电路(3D SoC)、太赫兹SiGe HBT器件、超高速光互连封装级系统(SiP)、单片集成电磁微系统等硅基异质集成技术前沿,展现了硅基异质集成技术的发展趋势,及其在军用和民用通信、智能传感技术发展中所具有的重要意义。

盒式气调包装机气体置换结构内部3-D流场的模拟

气体置换装置是气调包装机的核心部件。以盒式气调包装机中2种典型气体置换装置结构为研究对象,建立了2种气体置换结构的物理模型和包装盒内气体流场分析数学模型,应用Fluent软件对包装盒内的气体流场进行三维数值模拟。建立了保证气体置换质量的包装盒内三维流场评价指标,分析了气体置换装置充、排气孔的结构布置与排列方式对气体置换性能的影响。结果表明,与传统结构相比,新设计结构在气体置换率、流场静压分布、气体平均流速以及耗气量等方面均具有更佳的性能。

微机电系统的封装技术

MEMS封装是在微电子封装技术基础上发展起来的一项关键的MEMS技术。介绍了MEMS封装技术的功能、特点与分类。在此基础上,重点介绍了键合技术、上下球栅阵列技术、倒装芯片技术、多芯片技术以及3-D技术等几种重要的MEMS封装技术。最后,进一步探讨了MEMS封装的发展趋势及研究方向。

微电子封装的新进展领域及对SMT的新挑战

介绍了几种微电子新型封装材料,如LTCC、AIN、金刚石、AI-Sic和无铅焊接材料等,论述了正在发展中的新型先进封装技术,如WLP、3D和SIP等,并对封装新领域MEMS和MOEMS作了简介。最后,就这些新技术对SMT的新挑战作了些探讨。。

三维封装叠层技术

三维封装技术是一种符合电子系统轻重量、小体积、高性能、低功耗的发展趋势的先进的封装技术。本文对三维封装技术进行了简要介绍 ,重点介绍了三维封装的叠层工艺和互连技术 ,阐述了三维封装技术的优点 。

片上雷达技术研究进展及发展趋势

本文回顾和梳理了当前片上雷达(Radar on Chip,RoC)的架构和射频前端、天线及信号处理等芯片化研究进展,以及基于异质异构集成、3D先进封装技术的雷达系统集成实现方案。在此基础上,从物理形态、实现工艺及技术发展等方面对片上雷达未来发展趋势进行了分析,指出基于硅基半导体工艺,片上集成多路雷达收发前端、波形产生及信号处理等雷达功能单元,实现片上系统(System on Chip,SoC);或者通过异质异构及先进封装技术,将高度集成的雷达芯片集成在一个封装内,实现封装系统(System in Package,SiP),从而满足雷达系统微型化、轻重量、低成本和低功耗的发展需求。同时,基于芯片化可扩充多通道阵列模块也有望构建大型复杂阵列雷达系统。该方案为未来小型化武器装备提供有效的探测感知手段,也为蓬勃发展的民用雷达提供可行的技术路径。