Analysis of the in situ stress orientation and magnitude in the No.4 Structure of Nanpu Sag was performed on the basis of data obtained from borehole breakout and acoustic emission measurements.On the basis of mechani...Analysis of the in situ stress orientation and magnitude in the No.4 Structure of Nanpu Sag was performed on the basis of data obtained from borehole breakout and acoustic emission measurements.On the basis of mechanical experiments,logging interpretation,and seismic data,a 3 D geological model and heterogeneous rock mechanics field of the reservoir were constructed.Finite element simulation techniques were then used for the detailed prediction of the 3 D stress field.The results indicated that the maximum horizontal stress orientation in the study area was generally NEE-SWW trending,with significant changes in the in situ stress orientation within and between fault blocks.Along surfaces and profiles,stress magnitudes were discrete and the in situ stress belonged to theⅠa-type.Observed inter-strata differences were characterized as five different types of in situ stress profile.Faults were the most important factor causing large distributional differences in the stress field of reservoirs within the complex fault blocks.The next important influence on the stress field was the reservoir’s rock mechanics parameters,which impacted on the magnitudes of in situ stress magnitudes.This technique provided a theoretical basis for more efficient exploration and development of low-permeability reservoirs within complex fault blocks.展开更多
In order to verify the validity of finite element numerical simulation method for asphalt mixture, which consists of aggregates, mastic (where mastic is a kind of fine mixture composed of asphalt binder mixed with fi...In order to verify the validity of finite element numerical simulation method for asphalt mixture, which consists of aggregates, mastic (where mastic is a kind of fine mixture composed of asphalt binder mixed with fines and fine aggregates) and air voids, based on three-dimensional (3D) heterogeneous specimen, X-ray computerized tomography (X-ray CT) was used to scan the asphalt specimens to obtain the real internal microstrnctures of asphalt mixture. CT images were reconstructed to build up 3D digital specimen, and the viscoelastic properties of mastic were described with Burgers model The uniaxial creep numerical simulations of three different levels of aggregate gradation were conducted. The simulation results agree well with the experimental results. The numerical simulation of asphalt mixture incorporated with real 3D microstructure based on finite element method is a promising application to conduct research of asphalt concrete. Additionally, this method can increase the mechanistic understanding of global viscoelastic properties of asphalt mixtures by linking the real 3D microstructure.展开更多
Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposer...Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposers,solder balls are placed next to the vias;however,this approach requires a large foot print for the input/output(I/O)connections.Therefore,in this study,we investigate the possibility of placing the solder balls directly on top of the vias,thereby enabling a smaller pitch between the solder balls and an increased density of the I/O connections.To reach this goal,inkjet printing(that is,piezo and super inkjet)was used to successfully fill and planarize hollow metal TSVs with a dielectric polymer.The under bump metallization(UBM)pads were also successfully printed with inkjet technology on top of the polymer-filled vias,using either Ag or Au inks.The reliability of the TSV interposers was investigated by a temperature cycling stress test(−40℃ to+125℃).The stress test showed no impact on DC resistance of the TSVs;however,shrinkage and delamination of the polymer was observed,along with some micro-cracks in the UBM pads.For proof of concept,SnAgCu-based solder balls were jetted on the UBM pads.展开更多
The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical ...The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical quantities,ICs typically provide functionalities related to the signals of these transducers,such as analog-to-digital conversion,amplification,filtering and information processing as well as communication between the MEMS transducer and the outside world.Thus,the vast majority of commercial MEMS products,such as accelerometers,gyroscopes and micro-mirror arrays,are integrated and packaged together with ICs.There are a variety of possible methods of integrating and packaging MEMS and IC components,and the technology of choice strongly depends on the device,the field of application and the commercial requirements.In this review paper,traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed.These include approaches based on the hybrid integration of multiple chips(multi-chip solutions)as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques.These are important technological building blocks for the‘More-Than-Moore’paradigm described in the International Technology Roadmap for Semiconductors.In this paper,the various approaches are categorized in a coherent manner,their merits are discussed,and suitable application areas and implementations are critically investigated.The implications of the different MEMS and IC integration approaches for packaging,testing and final system costs are reviewed.展开更多
基金financially supported by the National Oil and Gas Major Project(2016ZX05047-003,2016ZX05014002-006)the National Natural Science Foundation of China(41572124)the Fundamental Research Funds for the Central Universities(17CX05010)
文摘Analysis of the in situ stress orientation and magnitude in the No.4 Structure of Nanpu Sag was performed on the basis of data obtained from borehole breakout and acoustic emission measurements.On the basis of mechanical experiments,logging interpretation,and seismic data,a 3 D geological model and heterogeneous rock mechanics field of the reservoir were constructed.Finite element simulation techniques were then used for the detailed prediction of the 3 D stress field.The results indicated that the maximum horizontal stress orientation in the study area was generally NEE-SWW trending,with significant changes in the in situ stress orientation within and between fault blocks.Along surfaces and profiles,stress magnitudes were discrete and the in situ stress belonged to theⅠa-type.Observed inter-strata differences were characterized as five different types of in situ stress profile.Faults were the most important factor causing large distributional differences in the stress field of reservoirs within the complex fault blocks.The next important influence on the stress field was the reservoir’s rock mechanics parameters,which impacted on the magnitudes of in situ stress magnitudes.This technique provided a theoretical basis for more efficient exploration and development of low-permeability reservoirs within complex fault blocks.
基金Project(51038004) supported by the National Natural Science Foundation of China
文摘In order to verify the validity of finite element numerical simulation method for asphalt mixture, which consists of aggregates, mastic (where mastic is a kind of fine mixture composed of asphalt binder mixed with fines and fine aggregates) and air voids, based on three-dimensional (3D) heterogeneous specimen, X-ray computerized tomography (X-ray CT) was used to scan the asphalt specimens to obtain the real internal microstrnctures of asphalt mixture. CT images were reconstructed to build up 3D digital specimen, and the viscoelastic properties of mastic were described with Burgers model The uniaxial creep numerical simulations of three different levels of aggregate gradation were conducted. The simulation results agree well with the experimental results. The numerical simulation of asphalt mixture incorporated with real 3D microstructure based on finite element method is a promising application to conduct research of asphalt concrete. Additionally, this method can increase the mechanistic understanding of global viscoelastic properties of asphalt mixtures by linking the real 3D microstructure.
基金This work is supported by ENIAC-JU Project Prominent Grant No 324189 and Tekes Grant No.40336/12 and Vinnova Grants Nos.2012-04301,2012-04287,and 2012-04314MM is supported by the Academy of Finland Grant Nos.288945 and 294119The work of Silex and KTH was funded in part through an Industrial Ph.D.grant from the Swedish Foundation for Strategic Research(SSF),Grant No.ID14-0033.
文摘Interposers with through-silicon vias(TSVs)play a key role in the three-dimensional integration and packaging of integrated circuits and microelectromechanical systems.In the current practice of fabricating interposers,solder balls are placed next to the vias;however,this approach requires a large foot print for the input/output(I/O)connections.Therefore,in this study,we investigate the possibility of placing the solder balls directly on top of the vias,thereby enabling a smaller pitch between the solder balls and an increased density of the I/O connections.To reach this goal,inkjet printing(that is,piezo and super inkjet)was used to successfully fill and planarize hollow metal TSVs with a dielectric polymer.The under bump metallization(UBM)pads were also successfully printed with inkjet technology on top of the polymer-filled vias,using either Ag or Au inks.The reliability of the TSV interposers was investigated by a temperature cycling stress test(−40℃ to+125℃).The stress test showed no impact on DC resistance of the TSVs;however,shrinkage and delamination of the polymer was observed,along with some micro-cracks in the UBM pads.For proof of concept,SnAgCu-based solder balls were jetted on the UBM pads.
基金The work was partially funded by the Swedish Research Council,by the European 7^(th)Framework Programme under grant agreement FP7-NEMIAC(No.288670)by the European Research Council through the ERC Advanced Grant xMEMs(No.267528)and the ERC Starting Grant M&M’s(No.277879).
文摘The majority of microelectromechanical system(MEMS)devices must be combined with integrated circuits(ICs)for operation in larger electronic systems.While MEMS transducers sense or control physical,optical or chemical quantities,ICs typically provide functionalities related to the signals of these transducers,such as analog-to-digital conversion,amplification,filtering and information processing as well as communication between the MEMS transducer and the outside world.Thus,the vast majority of commercial MEMS products,such as accelerometers,gyroscopes and micro-mirror arrays,are integrated and packaged together with ICs.There are a variety of possible methods of integrating and packaging MEMS and IC components,and the technology of choice strongly depends on the device,the field of application and the commercial requirements.In this review paper,traditional as well as innovative and emerging approaches to MEMS and IC integration are reviewed.These include approaches based on the hybrid integration of multiple chips(multi-chip solutions)as well as system-on-chip solutions based on wafer-level monolithic integration and heterogeneous integration techniques.These are important technological building blocks for the‘More-Than-Moore’paradigm described in the International Technology Roadmap for Semiconductors.In this paper,the various approaches are categorized in a coherent manner,their merits are discussed,and suitable application areas and implementations are critically investigated.The implications of the different MEMS and IC integration approaches for packaging,testing and final system costs are reviewed.