This study explored the superior citrate method(CM)to synthesize Mn-Ce bi-oxides on 3 D monolithic Ni-foam(NF)catalysts for the selective catalytic reduction of NO by NH_(3)(NH_(3)-SCR).The 17 wt%Mn(7)Ce(3)O_(x)/NF(CM...This study explored the superior citrate method(CM)to synthesize Mn-Ce bi-oxides on 3 D monolithic Ni-foam(NF)catalysts for the selective catalytic reduction of NO by NH_(3)(NH_(3)-SCR).The 17 wt%Mn(7)Ce(3)O_(x)/NF(CM-17)catalyst shows the NO_(x)conversion of 98.7%at 175℃and 90%in the presence of 10 vol%H2 O.It is revealed that the combination of surface-active oxygen(formed by high-level oxygen vacancies)and strongly oxidized Mn4+species promots the Fast-SCR reactions,in which Mn4+species play a leading role in NH_(3)-SCR reaction,and the unsaturated Ni atoms and also Ce3+species promote electron exchange and thus improve the redox performance.The coexistence mechanisms of Fast-SCR reactions and E-R pathways are observed over Mn-CeO_(x)/NF catalyst,which may be promoted by the Br?nsted sites at low temperature.In addition,the heat resistance,stability,3 D monolithic porous structure and excellent physical properties of foam nickel provide a unique growth substrates for catalysts preparation and reaction sites for NO_(x)purification.Therefore,industrial application of Mn-Ce bioxides loaded on 3 D monolithic is proposed to be achieved through reasonable preparation methods.展开更多
Carbon nanotube field-effect transistors(CNT FETs)have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dime...Carbon nanotube field-effect transistors(CNT FETs)have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional(M3D)integrated circuits(ICs),which have been considered a promising tech-nology to meet the demands of high-bandwidth computing and fully func-tional integration.However,the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric(ILD)makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance.In this work,we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube(A-CNT)transistors and ICs.A low-κ(-3)interlayer SiO_(2)layer is prepared from spin-on-glass(SOG)through processes with a highest temperature of 220℃,presenting low parasitic capaci-tance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process.A high-quality A-CNT film with a carrier mobility of 650 cm 2 V^(-1)s^(-1)is prepared on the ILD layer through a clean transfer process,enabling the upper CNT FETs fabri-cated with a low-temperature process to exhibit high on-state current(1 mAμm^(-1))and peak transconductance(0.98 mSμm^(-1)).The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication.As a result,5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100μm 2,representing the fastest and the most compact M3D ICs to date.展开更多
基金Project supported by the National Key R&D Program of China(2017YFC0210303)National Natural Science Foundation of China(21806009)+1 种基金China Postdoctoral Science Foundation(2019T120049)Fundamental Research Funds for the Central Universities(06500152,FRF-TP-18-019A1)。
文摘This study explored the superior citrate method(CM)to synthesize Mn-Ce bi-oxides on 3 D monolithic Ni-foam(NF)catalysts for the selective catalytic reduction of NO by NH_(3)(NH_(3)-SCR).The 17 wt%Mn(7)Ce(3)O_(x)/NF(CM-17)catalyst shows the NO_(x)conversion of 98.7%at 175℃and 90%in the presence of 10 vol%H2 O.It is revealed that the combination of surface-active oxygen(formed by high-level oxygen vacancies)and strongly oxidized Mn4+species promots the Fast-SCR reactions,in which Mn4+species play a leading role in NH_(3)-SCR reaction,and the unsaturated Ni atoms and also Ce3+species promote electron exchange and thus improve the redox performance.The coexistence mechanisms of Fast-SCR reactions and E-R pathways are observed over Mn-CeO_(x)/NF catalyst,which may be promoted by the Br?nsted sites at low temperature.In addition,the heat resistance,stability,3 D monolithic porous structure and excellent physical properties of foam nickel provide a unique growth substrates for catalysts preparation and reaction sites for NO_(x)purification.Therefore,industrial application of Mn-Ce bioxides loaded on 3 D monolithic is proposed to be achieved through reasonable preparation methods.
基金National Key Research&Development Program,Grant/Award Number:2022YFB4401601Natural Science Foundation of China,Grant/Award Number:62225101Beijing Municipal Science and Technology Commission,Grant/Award Number:Z191100007019001-3。
文摘Carbon nanotube field-effect transistors(CNT FETs)have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional(M3D)integrated circuits(ICs),which have been considered a promising tech-nology to meet the demands of high-bandwidth computing and fully func-tional integration.However,the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric(ILD)makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance.In this work,we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube(A-CNT)transistors and ICs.A low-κ(-3)interlayer SiO_(2)layer is prepared from spin-on-glass(SOG)through processes with a highest temperature of 220℃,presenting low parasitic capaci-tance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process.A high-quality A-CNT film with a carrier mobility of 650 cm 2 V^(-1)s^(-1)is prepared on the ILD layer through a clean transfer process,enabling the upper CNT FETs fabri-cated with a low-temperature process to exhibit high on-state current(1 mAμm^(-1))and peak transconductance(0.98 mSμm^(-1)).The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication.As a result,5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100μm 2,representing the fastest and the most compact M3D ICs to date.
