It is difficult to treat 2-amino-thiazoline-4-carboxylic acid （ATC） waste liquid effectively at present for its characteristics of high chemical oxygen demand （COD）, high salinity and low biodegradability. In orde...It is difficult to treat 2-amino-thiazoline-4-carboxylic acid （ATC） waste liquid effectively at present for its characteristics of high chemical oxygen demand （COD）, high salinity and low biodegradability. In order to solve this problem, this paper presents several kinds of physical-chemical treatment unit techniques, including acid separation, catalytic oxidation and coagulation. First of all, acid separation was adopted to precipitate relevant organics at isoelectric point. When the temperature and pH value of acid separation were controlled at about 5 ℃ and 2.2 respectively, the COD removal rate could reach 27.600. Secondly, oxidation was used to break chemical constitution of refractory organics. The optimal reaction parameters of catalytic oxidation should be 20 ℃, pH adjusted to 5.0 and [Fe2+] 300 mg/L. Then with 500 H2O2 added and after one-hour reaction, the COD removal rate could achieve about 5200. Finally, coagulation was adopted to remove a portion of refractory organics, and 1500 polymeric molysite flocculant was the best for the coagulation, and the COD removal rate could reach about 1500. Therefore, the proposed feasible process of physical-chemical pretreatment for ATC waste liquid could have about 7000 COD removed in total.展开更多
This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down tran...This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.展开更多
文摘It is difficult to treat 2-amino-thiazoline-4-carboxylic acid （ATC） waste liquid effectively at present for its characteristics of high chemical oxygen demand （COD）, high salinity and low biodegradability. In order to solve this problem, this paper presents several kinds of physical-chemical treatment unit techniques, including acid separation, catalytic oxidation and coagulation. First of all, acid separation was adopted to precipitate relevant organics at isoelectric point. When the temperature and pH value of acid separation were controlled at about 5 ℃ and 2.2 respectively, the COD removal rate could reach 27.600. Secondly, oxidation was used to break chemical constitution of refractory organics. The optimal reaction parameters of catalytic oxidation should be 20 ℃, pH adjusted to 5.0 and [Fe2+] 300 mg/L. Then with 500 H2O2 added and after one-hour reaction, the COD removal rate could achieve about 5200. Finally, coagulation was adopted to remove a portion of refractory organics, and 1500 polymeric molysite flocculant was the best for the coagulation, and the COD removal rate could reach about 1500. Therefore, the proposed feasible process of physical-chemical pretreatment for ATC waste liquid could have about 7000 COD removed in total.
文摘This paper proposes a novel loadless 4T SRAM cell composed of nMOS transistors. The SRAM cell is based on 32nm silicon-on-insulator （SO1） technology node. It consists of two access transistors and two pull-down transistors. The pull-down transistors have larger channel length than the access transistors. Due to the significant short channel effect of small-size MOS transistors, the access transistors have much larger leakage current than the pull-down transistors,enabling the SRAM cell to maintain logic ＂1＂ while in standby. The storage node voltages of the cell are fed back to the back-gates of the access transistors,enabling the stable ＂read＂ operation of the cell. The use of back-gate feedback also helps to im- prove the static noise margin （SNM） of the cell. The proposed SRAM cell has smaller area than conventional bulk 6T SRAM cells and 4T SRAM cells. The speed and power dissipation of the SRAM cell are simulated and discussed. The SRAM cell can operate with a 0. 5V supply voltage.
