A 4H–SiC betavoltaic battery based on a ^(63)Ni source

A 4H–SiC–^(63)Ni p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the ^(63)Ni source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the ^(63)Ni source increases from 2 ×10^(-3) to10 lm, the theoretical maximum device conversion efficiency increases from 16.77 to 23:51% and the total conversion efficiency decreases from 16.73 to 1:48%.Furthermore, a feasible design with a maximum output power density of 0:36 μW=cm^2 and an optimal device conversion efficiency of 23:5% is obtained.

4H-SiC肖特基微型同位素电池(英文)

半导体同位素电池由于其寿命长、集成性优良、环境适应性强等特点成为解决MEMS能源问题的理想手段。利用4H-SiC材料的宽禁带特性,制造了4H-SiC肖特基同位素电池。对电池的耗尽层厚度以及掺杂浓度进行了优化设计,对肖特基金属进行了选择。使用4mCi/cm2的63Ni作为同位素电池的放射源对制造的同位素电池进行了测试。测试结果表明,该同位素电池可以获得31.3nW/cm2的功率密度、0.5V的开路电压、3.13×10-8A/cm2的短路电流密度和1.3%的转换效率。将电池的输出特性和硅基的平板型、3D结构电池输出特性进行了比较,证明4H-SiC肖特基同位素电池能够获得较高的功率密度。电池的性能可通过提升势垒高度、提高工艺质量、更换同位素等方式得到提高。