This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is...This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.展开更多
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the ...In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.展开更多
In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conve...In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.展开更多
A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the ...A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.展开更多
Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calcula...Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calculated considering four recombination processes.Then its performance is analyzed under high temperature conditions.The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature.Meanwhile,the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity,and make an obvious current gain fall-off at a high collector current.展开更多
文摘This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H-SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H-SiC BJT performance.
基金supported by the Ministry of Education of China (Grant No. 20100101110056)the Natural Science Foundation for Distinguished Young Scholars of Zhejiang Province of China (Grant No. R1100468)
文摘In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base tield plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3 × 1017 cm 3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 ~tm and base doping as high as 8 × 10^17 cm^-3 contribute to a maximum current gain of only 128.
文摘In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.
基金Project supported by the National Natural Science Foundation of China(Nos.61306093,61401075)
文摘A novel 4H-SiC BJT of high current gain with a suppressing surface traps effect has been proposed. It is effective to improve the current gain due to the lower electrons density in the surface region by extending the emitter metal to overlap the passivation layer on the extrinsic base surface. The electrons trapped in the extrinsic base surface induce the degeneration of Si C BJTs device performance. By modulating the electron recombination rate, the novel structure can increase the current gain to 63.2% compared with conventional ones with the compatible process technology. Optimized sizes are an overlapped metal length of 4 m, as well as an oxide layer thickness of 50 nm.
基金Project supported by the National Natural Science Foundation of China(No.60876061)the Key Laboratory Foundation of China (No.20090C1403)
文摘Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to the drift-diffusion and the carrier recombination theory,the common emitter current gain is calculated considering four recombination processes.Then its performance is analyzed under high temperature conditions.The results show that the emitter injection efficiency decreases due to an increase in the base ionization rate with increasing temperature.Meanwhile,the SiC/SiO2 interface states and the quality of the passivation layer will affect the surface recombination velocity,and make an obvious current gain fall-off at a high collector current.