An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical f...An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.展开更多
4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Conside...4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Considering the high carrier mobility and high stability of 4H-SiC,4H-SiC has great potential in the field of photoelectrochemical(PEC)water splitting.In this work,we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays.A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity,that is,a constant low-voltage etching followed by a pulsed high-voltage etching.The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays,respectively.It is found that the nanoporous arrays with medium porosity has the highest PEC current,because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays.The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy,which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.展开更多
Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to ...Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant No.51677149)
文摘An ultra-high voltage 4H-silicon carbide(Si C) gate turn-off(GTO) thyristor for low switching time is proposed and analyzed by numerical simulation. It features a double epitaxial p-base in which an extra electrical field is induced to enhance the transportation of the electrons in the thin p-base and reduce recombination. As a result, the turn-on characteristics are improved. What is more, to obtain a low turn-off loss, an alternating p^+/n^+region formed in the backside acts as the anode in the GTO thyristor. Consequently, another path formed by the reverse-biased n^+–p junction accelerates the fast removal of excess electrons during turn-off. This work demonstrates that the turn-on time and turn-off time of the new structure are reduced to 37 ns and 783.1 ns, respectively, under a bus voltage of 8000 V and load current of 100 A/cm^2.
基金supported by National Natural Science Foundation of China(Grant Nos.62274143 and U22A2075)Hangzhou Joint Funds of the Zhejiang Provincial Natural Science Foundation of China(Grant No.LHZSD24E020001)+3 种基金Partial support was provided by Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou(Grant No.TD2022012)Fundamental Research Funds for the Central Universities(Grant No.226-2022-00200)Natural Science Foundation of China for Innovative Research Groups(Grant No.61721005)the Open Fund of Zhejiang Provincial Key Laboratory of Wide Bandgap Semiconductors。
文摘4H silicon carbide(4H-SiC)has gained a great success in high-power electronics,owing to its advantages of wide bandgap,high breakdown electric field strength,high carrier mobility,and high thermal conductivity.Considering the high carrier mobility and high stability of 4H-SiC,4H-SiC has great potential in the field of photoelectrochemical(PEC)water splitting.In this work,we demonstrate the irradiation-resistant PEC water splitting based on nanoporous 4H-SiC arrays.A new two-step anodizing approach is adopted to prepare 4H-SiC nanoporous arrays with different porosity,that is,a constant low-voltage etching followed by a pulsed high-voltage etching.The constant-voltage etching and pulsed-voltage etching are adopted to control the diameter of the nanopores and the depth of the nanoporous arrays,respectively.It is found that the nanoporous arrays with medium porosity has the highest PEC current,because of the enhanced light absorption and the optimized transportation of charge carriers along the walls of the nanoporous arrays.The performance of the PEC water splitting of the nanoporous arrays is stable after the electron irradiation with the dose of 800 and 1600 k Gy,which indicates that 4H-SiC nanoporous arrays has great potential in the PEC water splitting under harsh environments.
基金supported by the Open Fund(2022E10015)of the Key Laboratory of Power Semiconductor Materials and Devices of Zhejiang Province&Institute of Advanced Semiconductors,ZJU-Hangzhou Global Scientific and Technological Innovation Center。
文摘Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence(PL) and deep level transient spectroscopy(DLTS). The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R_(2)(Ec-0.51 eV) appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.
