Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an...Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an S-4700 scanning electron microscope （SEM） equipped with an energy dispersive spectrometer （EDS） and an electron probe X-ray microanalyzer （EPMA）. The structure of joint interface was identified by XRD （JDX-3530M）. Meanwhile, the fracture paths of the joints were comprehensively studied. The results show that processing parameters, especially the brazing temperature, have a significant effect on the microstructure and mechanical properties of joints. The typical interface structure is SiO2/Ti2O＋Zr3Si2＋Ti5Si3/（Ti,Zr）＋Ti2O＋ TiZrNiCu/Ti（s.s）/TiZrNiCu＋Ti（s.s）＋Ti2（Cu,Ni）/TC4 from SiO2 glass ceramic to TC4 alloy side. Based on the mechanical property tests, the joints brazed at 880 ℃ for 5 rain has the maximum shear strength of 23 MPa.展开更多
The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated ...The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.展开更多
基金Project(50705022) supported by the National Natural Science Foundation of ChinaProject(HIT0804) supported by the Foundation of the National Key Laboratory of Precision Hot Processing of Metals,ChinaProject supported by Program of Excellent Team in Harbin Institute of Technology,China
文摘Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an S-4700 scanning electron microscope （SEM） equipped with an energy dispersive spectrometer （EDS） and an electron probe X-ray microanalyzer （EPMA）. The structure of joint interface was identified by XRD （JDX-3530M）. Meanwhile, the fracture paths of the joints were comprehensively studied. The results show that processing parameters, especially the brazing temperature, have a significant effect on the microstructure and mechanical properties of joints. The typical interface structure is SiO2/Ti2O＋Zr3Si2＋Ti5Si3/（Ti,Zr）＋Ti2O＋ TiZrNiCu/Ti（s.s）/TiZrNiCu＋Ti（s.s）＋Ti2（Cu,Ni）/TC4 from SiO2 glass ceramic to TC4 alloy side. Based on the mechanical property tests, the joints brazed at 880 ℃ for 5 rain has the maximum shear strength of 23 MPa.
基金Project supported by the National Natural Science Foundation of China(No.61234006)the State Grid of China(No.sgri-wd-71-14-003)
文摘The interface properties of 4H-SiC metal oxide semiconductor （MOS） capacitors with post-oxidation annealing （POA） in nitric oxide （NO） ambient after high temperature （1300 ℃） oxidation have been investigated using capacitance-voltage （C V） measurements. The experimental results show that the interface states density （Dit） can be obviously decreased by the POA in NO ambient （NO-POA） and further reduced with increasing POA temperature and time. In the meantime significant reduction of the interface states density and oxidation time can be achieved at the higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. The dependence of Dit on POA temperature and time has been also discussed in detail.
