Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transis...Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.展开更多
文摘Owing to the conductivity modulation of silicon carbide（Si C） bipolar devices, n-channel insulated gate bipolar transistors（n-IGBTs） have a significant advantage over metal oxide semiconductor field effect transistors（MOSFETs） in ultra high voltage（UHV） applications. In this paper, backside grinding and laser annealing process were carried out to fabricate 4 H-Si C n-IGBTs. The thickness of a drift layer was 120 μm, which was designed for a blocking voltage of 13 k V. The n-IGBTs carried a collector current density of 24 A/cm^2 at a power dissipation of300 W/cm^2 when the gate voltage was 20 V, with a differential specific on-resistance of 140 mΩ·cm^2.
