Based on the cultural heritages' characteristics in Wenchuan earthquake disaster area and after the analysis of cultural heritages destruction after the earthquake,the paper had concluded the damage of cultural he...Based on the cultural heritages' characteristics in Wenchuan earthquake disaster area and after the analysis of cultural heritages destruction after the earthquake,the paper had concluded the damage of cultural heritages in different areas and forms,and pointed out the significance of earthquake resistance of cultural heritages and outlets for cultural heritages protection.Furthermore,it proposed measures and suggestions for cultural heritages protection from the perspective of national laws and regulations and the broad masses of the people.It emphasized that it should enhance all kinds of prevention measures by means of law and effectively protect cultural heritages;definitely formulae earthquake-proofing standards of architectures in law;intensify the protection of non-material cultural heritages;and protect architectural cultural heritages as many as possible.Besides,it should call on the broad masses of the people who would be the major force and true master of architectural cultural heritages protection.On this basis,it had further taken international beneficial experience for non-material cultural heritages as the reference,so as to help people think about cultural heritages protection.展开更多
For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development...For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.展开更多
文摘Based on the cultural heritages' characteristics in Wenchuan earthquake disaster area and after the analysis of cultural heritages destruction after the earthquake,the paper had concluded the damage of cultural heritages in different areas and forms,and pointed out the significance of earthquake resistance of cultural heritages and outlets for cultural heritages protection.Furthermore,it proposed measures and suggestions for cultural heritages protection from the perspective of national laws and regulations and the broad masses of the people.It emphasized that it should enhance all kinds of prevention measures by means of law and effectively protect cultural heritages;definitely formulae earthquake-proofing standards of architectures in law;intensify the protection of non-material cultural heritages;and protect architectural cultural heritages as many as possible.Besides,it should call on the broad masses of the people who would be the major force and true master of architectural cultural heritages protection.On this basis,it had further taken international beneficial experience for non-material cultural heritages as the reference,so as to help people think about cultural heritages protection.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA0718701)the China Postdoctoral Science Foundation(Grant No.2022M722888)the National Natural Science Foundation of China(Grant Nos.12174347 and 12004340).
文摘For the past few years,germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology.The main challenges in the development of modern semiconductor spintronics are the generation,detection,and manipulation of spin currents.Here,the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures were investigated systematically.The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted.The spin-injection efficiency in the Y_(3)Fe_(5)O_(12)/GeBi/Pt heterostructures is comparable to that of the Y_(3)Fe_(5)O_(12)/Pt bilayer,and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness.Furthermore,the band gap of the GeBi layer was tuned by changing the Bi content.The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer.Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.
