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Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter 被引量:1
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作者 吴雪 陆妩 +6 位作者 王义元 胥佳灵 张乐情 卢健 于新 张兴尧 胡天乐 《Journal of Semiconductors》 EI CAS CSCD 2013年第1期94-99,共6页
The total dose effect of an AD678 with a BiMOS process is studied.We investigate the performance degradation of the device in different bias states and at several dose rates.The results show that an AD678 can endure 3... The total dose effect of an AD678 with a BiMOS process is studied.We investigate the performance degradation of the device in different bias states and at several dose rates.The results show that an AD678 can endure 3 krad(Si) at low dose rate and 5 krad(Si) at a high dose rate for static bias.The sensitive parameters to the bias states also differ distinctly.We find that the degradation is more serious on static bias.The underlying mechanisms are discussed in detail. 展开更多
关键词 BIMOS A/D converter 60co radiation bias state dose rate
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