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First-principles Study on Geometric and Electronic Structures of Si(111)-√7× √3-In Surface Reconstruction
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作者 商波 袁岚峰 杨金龙 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2012年第4期403-408,I0003,共7页
In order to determine the structures of Si(111)-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calcula... In order to determine the structures of Si(111)-√7 √3-In surfaces and to understand their electronic properties, we construct six models of both hexagonal and rectangular types and perform first-principles calculations. Their scanning tunneling microscopic images and work functions are simulated and compared with experimental results. In this way, the hex-H3' and rect-T1 models are identified as the experimental configurations for the hexagonal and rectangular types, respectively. The structural evolution mechanism of the In/Si(lll) surface with indium coverage around 1.0 monolayer is discussed. The 4×1 and -√7× √3 phases are suggested to have two different types of evolution mechanisms, consistent with experimental results. 展开更多
关键词 Surface reconstruction Si(111)-√7× √3In Density functional theory Scanning tunnueling microscopic image
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