This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of ...This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.展开更多
A Co^2＋：spinel passively Q-switched erbium-ytterbium-phosphate glass bonded laser pumped at 940 nm is reported.A pulse energy of 210 μJ, a peak power over 70 kW, and beam quality M-2 parameter of 1.2 are obtained u...A Co^2＋：spinel passively Q-switched erbium-ytterbium-phosphate glass bonded laser pumped at 940 nm is reported.A pulse energy of 210 μJ, a peak power over 70 kW, and beam quality M-2 parameter of 1.2 are obtained under a pump power of 235 mW. An unbonded laser output experiment with the same dimension of the active material and the saturable absorber as the bonded laser output experiment is carried out. The reason why the output in the bonded laser is improved is determined.展开更多
文摘This paper is focused on a 940 nm edge type of semiconductor laser, which is made from 940 nm InGaAs double-quantum-well epitaxial wafer, produced by Metal Organic Chemical Vapor Deposition (MOCVD). In the absence of coating, the efficiency at the room temperature is 0.89 W/A, and the averaged threshold current is 0.307 A. The present study investigates the impact of temperature on the P-I curve, V-I curve and the centre wavelength, the temperature ranging from 286.15 - 333.15 K. It shows that the threshold current increases from 0.28 A to 0.41 A with the increasing temperature. The increase rate is 0.0027 A/K. With the temperature ranging from 286.15 - 333.15 K, the characteristic temperature is calculated to be 120 K. At driven current of 2 A, the output power decreases from 1.47 W to 1.27 W at a rate of 0.00425 W/K. At a constant voltage, the output current initially increases with the temperature within a certain range, beyond which the impact of the temperature is minimum. The ideal factor obtained from V-I curve by curve fitting is 1.076. The series resistance is 0.609 Ω. The centre wavelength shifts to a longer wavelength with the increasing temperature at a rate of 0.275288 nm/K.
文摘A Co^2＋：spinel passively Q-switched erbium-ytterbium-phosphate glass bonded laser pumped at 940 nm is reported.A pulse energy of 210 μJ, a peak power over 70 kW, and beam quality M-2 parameter of 1.2 are obtained under a pump power of 235 mW. An unbonded laser output experiment with the same dimension of the active material and the saturable absorber as the bonded laser output experiment is carried out. The reason why the output in the bonded laser is improved is determined.
