The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equ...The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived.展开更多
文摘The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density. The electric potential equation is discretized by a mixed finite element method. The electron and hole density equations are treated by implicit-explicit multistep finite element methods. The schemes are very efficient. The optimal order error estimates both in time and space are derived.
文摘在卫星上对中间层顶区域的气辉辐射成像观测,对于全球大气波动的监测和研究具有重要的意义.利用TDICCD对O_2A(0-0)气辉进行成像观测,计算了曝光积分时间、信噪比和能达到的最高空间分辨率,分析了地球自转对空间分辨率的影响,在此基础上提出一种星载全球大气波动成像仪方案,该方案可以观测垂直波长大于10 km的大气波动,最高水平分辨率可以达到0.33 km.
