AC Conductivity of (As_2Te_3)_(100-x)Ge_x Bulk Glassy System

The ac conductivity of the bulk amorphous chalcogenide system (As2Te3)100-xGex (where x=0,5,10,15 and 25 at. pct) was investigated at variable frequencies ranging from 50 Hz to 100 kHz and at different temperatures ranging from 3O to 160℃. lt was found that at a fixed temperature, where n <1 and decreases with temperature. The complex impedence Z was measured over the same frequency and temperature ranges. All samples give a semicircle arc originating at the origin point. This indicates that each composition can be described only by one resistance R and one capacity C, both parallelly combined. The centre below the real axis indicates the relaxation behaviour of the system. The activation energies for conduction were calculated.

AC Conductivity and Dielectric Relaxation Behavior of Sol-gel Ba_xSr_(1-x)TiO_3 Thin Films

BaxSr1-xTiO3 sol-gel thin films with x--0.5, 0.7 and 0.8 have been fabricated as AI/BST/Pt capacitor. The AC conductivity and dielectric properties over a frequency rang of 10 Hz and I MHz have been studied in order to explore the ion dynamics and relaxation mechanisms in the films. The frequency dependent conductivity plots show three regions of conduction processes. Dielectric results show that ε＇ at low frequencies increases as Sr content decreases, whereas at high frequencies, it shows opposite variation, which is attributed to the dipole dynamics. The electric modulus plots reveal the relaxation peaks which are not observed in the ε＂ plots and the contribution of the grains, grain boundaries and electrode to the relaxation mechanisms.

IMPEDANCE SPECTROSCOPY AND AC CONDUCTIVITY STUDIES OF FERROELECTRIC(K_(0.5)Na_(0.5))NbO_(3)CERAMICS

Lead free(K_(0.5)Na_(0.5))NbO_(3)(KNN)ceramics were prepared by conventional solid state reaction route.For single perovskite phase formation,calcination temperature was optimized at 850℃for 6h,whereas for dense morphology the sintering of the ceramic was carried out at 1120℃for 4h.X-ray diffraction XRD analysis confirmed the formation of single phase with orthorhombic structure at room temperature.Impedance analysis and AC conductivity studies of the KNN sample was carried out in the temperature range of 703-773 K.Impedance study showed the increase in conducting behavior at higher temperature.The temperature dependence of AC conductivity indicated that the conduction process is due to doubly ionized oxygen vacancies in the higher temperature region.

Master curve generation and modeling of ac conductivity for Mn_(0.7+x)Zn_(0.3)Si_(x)Fe_(2-2x)O_(4) spinel ferrite system

The compositional dependence of ac conductivity(δac),real(δ′)and imaginary(δ′′)parts of complex electric conductivity(δ*)was investigated as a function of temperature(T)and frequency(f) for Mn_(0.7+x)Zn_(0.3)Si_(x)Fe_(2-2x)O_(4),x=0.0,0.1,0.2 and 0.3 spinel ferrite system.The compositional dependence of lattice constant values suggested that the most of the substituted Si4+-ions reside at grain boundaries and only a few Si-ions are inside grains.The variation of
δ_(ac)(x,f,T)is explained on the basis of segregation and diffusion of Si4+ions at grain boundaries and grains,respectively,and the electrode effect.Thermal variation of ac conductivity at fixed frequency suggested two different mechanisms which could be responsible for conduction in the system.It is found that δ*is not the preferred presentation for dielectric data and the scaling process of real part of conductivity by normalized frequency and the scaled frequency were found unsuccessful.The fitting results of ac conductivity data with path percolation approximation were found suitable in low-frequency regime while in high-frequency regime,effective medium approximation(EMA)was found successful.

Dielectric relaxation and scaling of AC conductivity observed in mixed valence perovskite Eu_(2)CoMnO_(6)

Monophasic and polycrystalline double perovskite Eu_(2)CoMnO_(6)has been synthesized,and its structural characterization,fre-quency and temperature-dependent dielectric relaxation have been studied.Observed thermally activated dielectric relaxation was explained using the empirical Havriliak-Negami(HN)dielectric relaxation function with an estimated activation energy E~0.22 eV and attempt frequency f0~2.46×10^(9)Hz.The frequency-dependent AC conductivity data,over a wide range of tempera-ture(100-325 K),followed the empirical universal power law behavior(~f n,n is the constant exponent)showing two different frequency exponents,respectively,in the high-and low-temperature regions.The high-temperature(>275 K)conductivity data followed the continuous time random walk(CTRW)approximation model proposed by Dyre.However,this model failed to repro-duce the observed conductivity spectra in the low-temperature side(<200 K).Interestingly,both the high-and low-temperatures’conductivity data can be scaled to the master curve with suitably chosen scaling parameters.

Temperature characterization of dielectric permittivity and AC conductivity of nano copper oxide-doped polyaniline composite

The polyaniline/copper oxide(PANI/CuO)nanocomposite was prepared by mixing solutions of polyaniline and copper oxide nanoparticles in dimethyl sulfoxide(DMSO).The synthesized polymer nanocomposites were characterized by X-ray powder diffraction(XRD),scanning electron microscope(SEM)and UV-visible spectroscopy.The characteristic peaks in XRD and UV-visible spectra confirmed the presence of CuO in the polymer structure.SEM images indicated morphological changes in the composite matrix as compared to the pristine PANI.The DC conductivity measurements were performed using two-probe method for various temperatures.AC conductivity and dielectric response of the composites were investigated in the frequency range of 10^(2)-10^(6)Hz using LCR meter.Dielectric permittivity
ε′(w)and dielectric loss factor
ε″(w)were investigated.It was observed thatε′(w)and
ε″(w)decrease with increase in frequency at all temperatures.At a particular frequency it is observed that bothε′(w)andε″(w)increase with increase in temperature.It was also observed that AC conductivity increased with increase in frequency and temperature.

Characteristics of alternating current hopping conductivity in DNA sequences

This paper presents a model to describe alternating current （AC） conductivity of DNA sequences, in which DNA is considered as a one-dimensional （1D） disordered system, and electrons transport via hopping between localized states. It finds that AC conductivity in DNA sequences increases as the frequency of the external electric field rises, and it takes the form of σac（ω） - ω2 ln^2（1/ω）. Also AC conductivity of DNA sequences increases with the increase of temperature, this phenomenon presents characteristics of weak temperature-dependence. Meanwhile, the AC conductivity in an offdiagonally correlated case is much larger than that in the uncorrelated case of the Anderson limit in low temperatures, which indicates that the off-diagonal correlations in DNA sequences have a great effect on the AC conductivity, while at high temperature the off-diagonal correlations no longer play a vital role in electric transport. In addition, the proportion of nucleotide pairs p also plays an important role in AC electron transport of DNA sequences. For p 〈 0.5, the conductivity of DNA sequence decreases with the increase of p, while for p ≥ 0.5, the conductivity increases with the increase of p.

Evaluation of Dielectric Properties of CCTO-BT/Epoxy Composites for Electronic Applications

In the current study,the calcium copper titanate(CCTO)/epoxy,barium titanate(BT)/epoxy and CCTO-BT/epoxy composite samples with variable volume fractions of CCTO and BT are fabricated using hand lay-up and compression moulding process. The composite samples are characterized for the frequency dependence on dielectric properties,conductivity,impedance spectroscopy and electrical modulus.X-ray diffraction(XRD)representation of CCTO-BT/epoxy composite samples confirmed the presence of both CCTO and BT ceramic samples separately. The dielectric characteristics of hybrid CCTO-BT/epoxy composite samples with CCTO∶BT ratio of 40∶60, 60∶40,and 50∶50 was found relatively better than those of single ceramic filler reinforced epoxy composites. AC conductivity analysis shows improvement in the results of hybrid filler-filled CCTO-BT/epoxy composites in comparison with single filler-filled epoxy composite.50∶50 CCTO-BT/epoxy composite shows the best AC conductivity value of~ 2.2 ×10^(-5) ohm^(-1)·m^(-1) at a higher frequency of 1MHz. The impedance analysis confirms the higher insulating properties for hybrid 40∶60 and 60∶40 CCTO-BT/epoxy composites with respect to the single and other hybrid ceramic epoxy composites. The analysis suggests the hybrid CCTO-BT/epoxy composites to be adopted as a potential dielectric material for energy storage devices and other electronic applications.

Alternating current characterization of nano-Pt(Ⅱ)octaethylporphyrin(PtOEP) thin film as a new organic semiconductor

Alternating current（AC） conductivity and dielectric properties of thermally evaporated Au/Pt OEP/Au thin films are investigated each as a function of temperature（303 K–473 K） and frequency（50 Hz–5 MHz）.The frequency dependence of AC conductivity follows the Jonscher universal dynamic law.The AC-activation energies are determined at different frequencies.It is found that the correlated barrier hopping（CBH） model is the dominant conduction mechanism.The variation of the frequency exponent s with temperature is analyzed in terms of the CBH model.Coulombic barrier height Wm,hopping distance Rω,and the density of localized states N（EF） are valued at different frequencies.Dielectric constant ε1（ω,T） and dielectric loss ε2（ω,T） are discussed in terms of the dielectric polarization process.The dielectric modulus shows the non-Debye relaxation in the material.The extracted relaxation time by using the imaginary part of modulus（M’’）is found to follow the Arrhenius law.

Synthesis and Characterization of CuO Nanoparticles and CuO Doped PVA Nanocomposites

CuO nanoparticles were synthesized by aqueous precipitation method and CuO doped PVA nanocomposites (1 wt, 2 wt, 3 wt, 4 wt and 5 wt) were prepared by solution casting method. The pellets of CuO nanoparticles and films of CuO doped PVA nanocomposites were used for electrical studies in the frequency range of 50 Hz to 5 MHz and in the temperature range of 303 to 338 K. The dielectric constant decreases while the AC electrical conductivity increases with increasing frequency and also with increase in temperature. XRD study confirms the crystalline nature of CuO nanoparticles and the average crystallite size is found to be around 8 nm. The peak widths in XRD pattern of PVA-CuO nanocomposites are broadened by incremental addition of CuO nanomaterials which implies an increase in the amorphous character of PVA-CuO nanocomposites that result in greater ionic diffusivity and high ionic conductivity. It is clear from UV-Vis spectral analysis that, increase in CuO concentration decreases the optical band gap from 4.978 eV to 3.03 eV. The FTIR (3700 - 650 cm-1) spectra of nanocomposite films are observed with changes by the addition of CuO nanomaterials.

Conduction Mechanism and Conductivity Behaviour of Pure Polypropylene (PP) and Polypropylene-Banana Fiber (PP-B) Composites

Fibers reinforced composite materials offer a combination of strength and modulus that are either comparable to or better than many traditional metallic materials.The research on natural fiber based composite materials fit well into this ecological image.This paper reports the conduction mechanism and ac conductivity,activation energy behavior of Polypropylene and banana fiber reinforced thermoplastic composites.Polypropylene[-CH_(2)-CH_(2)-CH_(2)-]n and different fiber content(wt.%)of polypropylene-banana fibers(natural fiber)composites were fabricated using a hot-press molding system.The optimum fabrication parameters were established(initial pressure,temp.etc.).These composite test samples were fabricated so the short fibers were randomly oriented in the matrix.The detail investigation of the a.c.conductivity and conduction mechanism of polymer composites would provide information about the relaxation processes,activation energy etc.which are dependent on frequency,temperature and time.The activation energy involved in the above processes can also be estimated from this study.The measurements were performed over a wide range of frequency of 60 Hz to 3 MHz and temperature range from 30℃(303°K)to 110℃(383°K).Experimental results of the ac properties of pure polypropylene and polypropylene-natural banana fiber composites were compared.It has been established that the fabricated composition changes its insulating property after adding the natural fibers and gives the better conductivity properties.

AC Conductance Through a Vibrating Molecular Dot in Kondo Regime

In the present paper,by applying the Lang-Firsov canonical transformation and the so-called non-crossingapproximation technique,we investigate the joint effects of the electron-phonon interaction and an external alternatinggate voltage on the transport of a quantum dot system in the Kondo regime.We find that,while the satellite Kondoresonant peaks appear in both the averaged local density of states and the differential conductance,the main Kondopeak at the Fermi energy is greatly suppressed.These results confirm the previous ones derived by other methods,suchas the equation of motion solution.Furthermore,based on the picture of virtual transition between quasi-eigenstates inthe system,we also give a slightly different explanation on these phenomena.

Structural and Dielectric Studies of Gd Doped ZnO Nanocrystals at Room Temperature

Gadolinium doped Zinc oxide (Zn1–xGdxO) nanocrystals with different percentage of Gd content (x = 0, 0.2, 0.4, 0.6, 0.8) have been prepared by the solid state reaction method. The structural, mor-phological and chemical studies of the samples were performed by X-ray diffraction (XRD), Scanning electron microscope (SEM) and Energy dispersive X-ray (EDX) analysis. The XRD spectra confirm that all the samples have hexagonal wurtzite structure. Decrease in average crystallite size with an increase in Gd concentration is observed in XRD. SEM images show that the grain size of undoped ZnO is larger than the Gd doped ZnO, specifying the hindrance of grain growth upon Gd doping. The chemical composition of the samples was confirmed using Energy dispersive X-ray (EDX) analysis. The variation of dielectric constant (εr), dielectric loss (tan δ) and AC conductivity as a function of frequency is studied at room temperature in a frequency which ranges from 100 Hz - 4.5 MHz by using LCR Hi TESTER. All the samples exhibit the normal dielectric behavior, i.e. decreases with increase in frequency which has been explained in the light of Maxwell-Wagner model. The dielectric constant and dielectric loss can be varied intensely by tuning Gd concentration in Zn1–xGdxO compounds.

Study of the Dielectric Behaviour of Cr-Doped Zinc Nano Ferrites Synthesized by Sol-Gel Method

The series of Cr-Zn nano ferrites having the general composition CrxZnFe2-xO4 (0 ≤ x ≤ 0.5) have been synthesized successfully in the nanocrystalline form using the sol-gel method. The samples were sintered at 900°C for 3 hours. The effect of chromium substitution on dielectric properties of Zn-ferrites is reported in this paper. The analysis of XRD patterns revealed the formation of single phase cubic spinel structure for all the Cr-Zn ferrite samples. The FTIR spectra show two strong absorption bands in the range of 400 - 600 cm-1, which corroborate the spinel structure of the samples. The average grain size was found to be in the nanometer range and of the order of 43 - 63 nm obtained using TEM images. The lattice parameter and crystallite size decrease with increase in Cr concentration (x). The investigation on dielectric constant (ε'), dissipation factor (D) and ac conductivity (σac) was carried out at a fixed frequency 1 kHz and in the frequency range of 100 Hz to 1 MHz at room temperature using LCR meter. The plots of dielectric constant (ε') versus frequency show the normal dielectric behavior of spinel ferrites. The value of ac conductivity (σac) increases with increase in frequency for all the compositions. The appearance of the peak for each composition in the dissipation factor versus frequency curve suggests the presence of relaxing dipoles in the Cr-Zn nano ferrite samples. It is also found that the shifting of the relaxation peak towards lower frequency side with an increase in chromium content (x) is due to the strengthening of dipole-dipole interactions. The composition and frequency dependence of the dielectric constant, dielectric loss and ac-conductivity are explained based on the Koop’s two-layer model, Maxwell-Wagner polarization process, and Debye relaxation theory.

Dielectric properties and relaxation dynamics in PbF_2-TeO_2-B_2_O3-Eu_2O_3 glasses

Frequency and temperature dependent dielectric dispersion of 20PbF2？20TeO2？（60？x）B2O3？xEu2O3（x=0 to 2.5, mole fraction, %） glasses prepared by the melt？quenching technique were investigated in the frequency range 1 Hz？10 MHz and temperature range 313？773 K. Dielectric relaxation dynamics was analyzed based on the electric modulus behavior. Dielectric losses （tanδ） are found to be negligibly small in the temperature range 313？523 K, proving good thermal stability of the glasses. The present Eu2O3-doped oxyfluroborate glasses showed low dielectric loss at higher frequency and lower temperature, proving their suitability for nonlinear optical materials.

Dielectric relaxation and conduction mechanism in Aurivillius ceramic Bi_(5)Ti_(3)FeO_(15)

For this study,we synthesized Aurivillius Bi_(5)Ti_(3)FeO_(15) ceramic using the generic solid-state reaction route and then performed roomtemperature X-ray diffraction to confirm that the compound had a single phase with no impurities.The surface morphology of the prepared sample was observed to contain microstructural grains approximately 0.2–2μm in size.The dielectric properties of the sample were determined as a function of frequency in a range of approximately 100 Hz to 1 MHz at various temperatures(303 K≤T≤773 K).Nyquist plots of the impedance data were found to exhibit a semi-circular arc in the high-temperature region,which is explained by the equivalent electrical circuit(R_(1)C_(1))(R_(2)QC_(2)),where R_(1) and R_(2) represent the resistances associated with the grains and grain boundaries,respectively,C_(1) and C_(2) are the respective capacitances,and Q is the constant phase element(CPE),which accounts for non-Debye type of behavior.Our results indicate that both the resistance and capacitance of the grain boundaries are more prominent than those of the grains.The alternating current(ac)conductivity data were analyzed based on the Jonscher universal power law,which indicated that the conduction process is dominated by the hopping mechanism.The calculated activation energies of the relaxation and conduction processes were very similar(0.32 to 0.53 eV),from which we conclude that the same type of charge carriers are involved in both processes.

Grain boundary effect on structural, optical, and electrical properties of sol-gel synthesized Fe-doped SnO_(2) nanoparticles

Tin oxide(SnO_(2)) and iron-doped tin oxide(Sn_(1-x)Fe_(x)O_(2),x=0.05 wt%,0.10 wt%) nanoparticles are synthesized by the simple sol-gel method.The structural characterization using x-ray diffraction(XRD) confirms tetragonal rutile phases of the nanoparticles.The variations in lattice parameters and relative intensity with Fe-doping concentration validate the incorporation of iron into the lattice.The compressive strain present in the lattice estimated by using peak profile analysis through using Williamson-Hall plot also exhibits the influence of grain boundary formation in the lattice.The radiative recombination and quenching observed in optical characterization by using photoluminescence spectrum(PL) and the shift in the band gap estimated from UV-visible diffused reflectance spectrum corroborate the grain boundary influence.Raman spectrum and the morphological analysis by using a field emission scanning electron microscope(FESEM) also indicate the formation of grain boundaries.The compositional analysis by using energy dispersive x-ray spectrum(EDAX) confirms Fe in the SnO_(2) lattice.The conductivity studies exhibit that the impendence increases with doping concentration increasing and the loss factor decreases at high frequencies with doping concentration increasing,which makes the Sn_(1-x)Fe_(x)O_(2) a potential candidate for device applications.

Microwave-assisted synthesis of Mg:PbI2 nanostructures and their structural,morphological,optical,dielectric and electrical properties for optoelectronic technology

This work reports the cost-effective growth of Mg:PbI2 nanostructures with 0,1,2.5 and 5.0 wt.%Mg doping concentrations.Structural,vibrational,morphological properties are analyzed using x-ray diffraction(XRD),Raman spectroscopy and scanning electron microscopy(SEM).XRD and Raman studies confirm the monophasic hexagonal system of Mg:PbI2,and no additional impurity peaks are detected.The Scherrer formula is used to determine sizes of crystallites to be in the range of 47-52 nm.EDX/SEM e-mapping analyses confirm the incorporation of Mg in PbI2 matrix and its uniform distribution throughout the sample.The hexagonal nanosheet-and nanoplate-like morphologies are detected in SEM images for pure and Mg-doped PbI2.An optical band gap of nanostructures is obtained from Tauc’s relation to be in the range 3.0-3.25 eV.Dielectric and electrical properties are found in significant enhancement as Mg doping in PbI2 matrix,also the conduction mechanism is discussed.

Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si (metal insulator semiconductor) structures

The dielectric properties of Au/Si3N4/n-Si （MIS） structures are studied using the admittance measurements （C–V and G/ω–V） each as a function of temperature in a range from 80 K to 400 K for two frequencies （100 kHz and 1 MHz）. Experimental results show that both the dielectric constant （ε’） and the dielectric loss （ε＂） increase with temperature increasing and decrease with frequency increasing. The measurements also show that the ac conductivity （σac） increases with temperature and frequency increasing. The lnσac versus 1000/T plot shows two linear regions with different slopes which correspond to low （120 K–240 K） and high （280 K–400 K） temperature ranges for the two frequencies. It is found that activation energy increases with frequency and temperature increasing.

Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.