The structures and electronic properties of ZnO nanowires（NWs） of different diameters are investigated by employing the first-principles density functional theory. The results indicate that the oxygen vacancy（VO） ...The structures and electronic properties of ZnO nanowires（NWs） of different diameters are investigated by employing the first-principles density functional theory. The results indicate that the oxygen vacancy（VO） exerts a more evident influence on the band gap of the ZnO NWs. However, the effect will be weakened with the increase of the diameter. In addition, the energy band shifts downward due to the existence of VOand the offset decreases with the reduction of the VOconcentration. As the concentration of surface Zn atoms decreases, the conduction band shifts downward, while 2p electrons are lost in the oxygen vacancy, resulting in the split of valence band and the formation of an impurity level. Our findings agree well with the previous observations and will be of great importance for theoretical research based on ZnO NWs.展开更多
Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect ...Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect of vacancy and oxygen occupation on the elastic properties and brittle-or-ductile behavior on Mo_(5)Si_(3).Four vacancies(Si_(-Va1),Si_(-Va2),Mo_(-Va1),Mo_(-Va2))and oxygen occupation models(O_(Mo1),O_(Mo2),O_(-Si1),O_(-Si2))are selected for research.It is found that Mo_(-Va2) vacancy has the stronger structural stability in the ground state in comparison with other vacancies.Besides,the deformation resistance and hardness of the parent Mo_(5)Si_(3) are weakened due to the introduction of different vacancy defects and oxygen occupation.The ratio of B/G indicates that oxygen atoms occupation and vacancy defects result in brittle-to-ductile transition for Mo_(5)Si_(3).These vacancies and the oxygen atoms occupation change the localized hybridization between Mo-Si and Mo-Mo atoms.The weaker O-Mo bond is a contributing factor for the excellent ductile behavior in the O_(-Si2) model for Mo_(5)Si_(3).展开更多
Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In ...Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In the three silicon atoms around the carbon vacancy, two atoms form a stable bond and the other is a dangling bond. A similar structure is found in the nanotube with a silicon vacancy. A carbon vacancy results in a defect level near the top of the valence band, while a silicon vacancy leads to the formation of three defect levels in the band gap of the nanotube. Transitions between defect levels and energy levels near the bottom of the conduction band have a close relationship with the formation of the novel dielectric peaks in the lower energy range of the dielectric function.展开更多
The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy （Vsn） and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is...The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy （Vsn） and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is a p-type semiconductor material, whose Fermi level shifts into the valence band when Zn atoms substitute Sn atoms, and the unoccupied states on the top of the valence band come from Zn 3d and O 2p states. Sn vacancies increase the relative hole number of Zn-doped SnO2, which results in a possible increase in the conductivity of Zn-doped SnO2. The Zn-doped SnO2 shows distinct visible light absorption, the increased absorption can be seen apparently with the presence of Sn vacancies in the crystal, and the blue-shift of optical spectra can be observed.展开更多
We employ plane-wave with ultrasoft pseudopotential method to calculate and compare the total density of states and partial density of states of bulk-phase GaN, Gao.9375N, and GaNo.9375 systems based on the first-prin...We employ plane-wave with ultrasoft pseudopotential method to calculate and compare the total density of states and partial density of states of bulk-phase GaN, Gao.9375N, and GaNo.9375 systems based on the first-principle density-functional theory （DFT）. For Ga and N vacancies, the electronic structures of their neighbor and next-neighbor atoms change partially. The Gao.9375N system has n-type semiconductor conductive properties, whereas the GaNo.9375 system has p-type semiconductor conductive properties. By studying the optical properties, the influence of Ga and N vacancy defects on the optical properties of GaN has been shown as mainly in the low-energy area and very weak in high-energy area. The dielectric peak influenced by vacancy defects expands to the visible light area, which greatly increases the electronic transition in visible light area.展开更多
In recent years,transition metal silicides have become the potential high temperature materials.The ternary silicide has attracted the attention of scientists and researchers.But their inherent brittle behaviors hinde...In recent years,transition metal silicides have become the potential high temperature materials.The ternary silicide has attracted the attention of scientists and researchers.But their inherent brittle behaviors hinder their wide applications.In this work,we use the first-principles method to design four vacancy defects and discuss the effects of vacancy defects on the structural stability,mechanical properties,electronic and thermodynamic properties of hexagonal Cr;BSi;silicide.The data of lattice vibration and thermodynamic parameters indicate that the Cr;BSi;with different atomic vacancies can possess the structural stabilities.The different atomic vacancies change the mechanical properties and induce the Cr;BSi;to implement the brittle-to-ductile transition.The shear deformation resistance and volume deformation resistance of Cr;BSi;are weakened by different vacancy defects.But the brittleness behavior is remarkably improved.The structural stability and brittle-to-ductile transition of Cr;BSi;with different vacancies are explored by the electronic structures.Moreover,the thermal parameters indicate that the Cr;BSi;with vacancies exhibit different thermodynamic properties with temperature rising.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51132002 and 11574261)the Natural Science Foundation of Hebei ProvinceChina(Grant No.A2015203261)
文摘The structures and electronic properties of ZnO nanowires（NWs） of different diameters are investigated by employing the first-principles density functional theory. The results indicate that the oxygen vacancy（VO） exerts a more evident influence on the band gap of the ZnO NWs. However, the effect will be weakened with the increase of the diameter. In addition, the energy band shifts downward due to the existence of VOand the offset decreases with the reduction of the VOconcentration. As the concentration of surface Zn atoms decreases, the conduction band shifts downward, while 2p electrons are lost in the oxygen vacancy, resulting in the split of valence band and the formation of an impurity level. Our findings agree well with the previous observations and will be of great importance for theoretical research based on ZnO NWs.
基金supported by grants from the Province Nature Science Foundation of Liaoning Province(Grant No.2019JH/30100019)。
文摘Improving brittle behavior and mechanical properties is still a big challenge for high-temperature structural materials.By means of first-principles calculations,in this paper,we systematically investigate the effect of vacancy and oxygen occupation on the elastic properties and brittle-or-ductile behavior on Mo_(5)Si_(3).Four vacancies(Si_(-Va1),Si_(-Va2),Mo_(-Va1),Mo_(-Va2))and oxygen occupation models(O_(Mo1),O_(Mo2),O_(-Si1),O_(-Si2))are selected for research.It is found that Mo_(-Va2) vacancy has the stronger structural stability in the ground state in comparison with other vacancies.Besides,the deformation resistance and hardness of the parent Mo_(5)Si_(3) are weakened due to the introduction of different vacancy defects and oxygen occupation.The ratio of B/G indicates that oxygen atoms occupation and vacancy defects result in brittle-to-ductile transition for Mo_(5)Si_(3).These vacancies and the oxygen atoms occupation change the localized hybridization between Mo-Si and Mo-Mo atoms.The weaker O-Mo bond is a contributing factor for the excellent ductile behavior in the O_(-Si2) model for Mo_(5)Si_(3).
基金Project supported by the China Postdoctoral Science Foundation(No.201104619)the Fund of Shaanxi Provincial Educational Department (No.2010JK775)
文摘Based on first-principle calculations, the electronic structures and optical properties of a single-walled （7, 0） SiC nanotube （SiCNT） with a carbon vacancy defect or a silicon vacancy defect are investigated. In the three silicon atoms around the carbon vacancy, two atoms form a stable bond and the other is a dangling bond. A similar structure is found in the nanotube with a silicon vacancy. A carbon vacancy results in a defect level near the top of the valence band, while a silicon vacancy leads to the formation of three defect levels in the band gap of the nanotube. Transitions between defect levels and energy levels near the bottom of the conduction band have a close relationship with the formation of the novel dielectric peaks in the lower energy range of the dielectric function.
基金supported by the National Natural Science Foundation of China(No.10974077)the Innovation Project of Shandong Graduate Education,China(No.SDYY13093)
文摘The electronic structures and optical properties of intrinsic SnO2, Zn-doped SnO2, SnO2 with Sn va- cancy （Vsn） and Zn-doped SnO2 with Sn vacancy are explored by using first-principles calculations. Zn-doped SnO2 is a p-type semiconductor material, whose Fermi level shifts into the valence band when Zn atoms substitute Sn atoms, and the unoccupied states on the top of the valence band come from Zn 3d and O 2p states. Sn vacancies increase the relative hole number of Zn-doped SnO2, which results in a possible increase in the conductivity of Zn-doped SnO2. The Zn-doped SnO2 shows distinct visible light absorption, the increased absorption can be seen apparently with the presence of Sn vacancies in the crystal, and the blue-shift of optical spectra can be observed.
基金supported by the National Natural Science Foundation of China (Nos. 60871012 and 61171042)the Shandong Natural Science Foundation(No. ZR2010FL018)the Shandong Province Higher Educational Science and Technology Program (No.J10LG74)
文摘We employ plane-wave with ultrasoft pseudopotential method to calculate and compare the total density of states and partial density of states of bulk-phase GaN, Gao.9375N, and GaNo.9375 systems based on the first-principle density-functional theory （DFT）. For Ga and N vacancies, the electronic structures of their neighbor and next-neighbor atoms change partially. The Gao.9375N system has n-type semiconductor conductive properties, whereas the GaNo.9375 system has p-type semiconductor conductive properties. By studying the optical properties, the influence of Ga and N vacancy defects on the optical properties of GaN has been shown as mainly in the low-energy area and very weak in high-energy area. The dielectric peak influenced by vacancy defects expands to the visible light area, which greatly increases the electronic transition in visible light area.
基金supported by the Natural Science Foundation of Liaoning Province,China(Grant No.2019JH/30100019)。
文摘In recent years,transition metal silicides have become the potential high temperature materials.The ternary silicide has attracted the attention of scientists and researchers.But their inherent brittle behaviors hinder their wide applications.In this work,we use the first-principles method to design four vacancy defects and discuss the effects of vacancy defects on the structural stability,mechanical properties,electronic and thermodynamic properties of hexagonal Cr;BSi;silicide.The data of lattice vibration and thermodynamic parameters indicate that the Cr;BSi;with different atomic vacancies can possess the structural stabilities.The different atomic vacancies change the mechanical properties and induce the Cr;BSi;to implement the brittle-to-ductile transition.The shear deformation resistance and volume deformation resistance of Cr;BSi;are weakened by different vacancy defects.But the brittleness behavior is remarkably improved.The structural stability and brittle-to-ductile transition of Cr;BSi;with different vacancies are explored by the electronic structures.Moreover,the thermal parameters indicate that the Cr;BSi;with vacancies exhibit different thermodynamic properties with temperature rising.
基金supported by the National Natural Science Foundation of China(61065006)the Open Project of Xinjiang Laboratory of Phase Transitions and Microstructures of Condensed Matters,China(XJDX0912-2010-06)~~
