A phenomenological low-filed mobility model is developed to describe the dependence ot the carrier molgmty on me gate to source bias applied for AIGaN/GaN high electron mobility transistor. The results show excellent ...A phenomenological low-filed mobility model is developed to describe the dependence ot the carrier molgmty on me gate to source bias applied for AIGaN/GaN high electron mobility transistor. The results show excellent agreement with experimental data, when compared thereby proving the validity of the model. In the proposed work the temporal evolution of the mobility degradation shows a sharp decline in emission rates below 456 s-1. We also note a sharp decline for large defects densities.展开更多
The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/G...The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AIGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AIGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10W with over 12dB power gain across the band of 9-11GHz at a drain bias of 30V. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a PAE of 23%. The MMIC chip size is only 2.0mm × 1. 1mm. This work shows superiority over previously reported X-band AIGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.展开更多
AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate vol...AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.展开更多
AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered i...AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given.展开更多
A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AIGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working t...A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AIGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working trap is determined to be electronic. A numerical simulation verifies this conclusion and reproduces the measured transients. The electron traps at different spatial positions in the device-on the ungated surface of the AIGaN layer,in the AIGaN barrier, and in the GaN layer are considered;corresponding behaviors in the stress and the transients are discussed;and for the simulated transients, agreement with and deviation from the measured transients are explained. Based on this discussion, we suggest that the measured transients are caused by the combined effects of a deep surface trap and a bulk trap in the GaN layer.展开更多
文摘A phenomenological low-filed mobility model is developed to describe the dependence ot the carrier molgmty on me gate to source bias applied for AIGaN/GaN high electron mobility transistor. The results show excellent agreement with experimental data, when compared thereby proving the validity of the model. In the proposed work the temporal evolution of the mobility degradation shows a sharp decline in emission rates below 456 s-1. We also note a sharp decline for large defects densities.
文摘The development of an AIGaN/GaN HEMT power MMIC on SI-SiC designed in microstrip technology is pres- ented. A recessed-gate and a field-plate are used in the device processing to improve the performance of the AIGaN/GaN HEMTs. S-parameter measurements show that the frequency performance of the AIGaN/GaN HEMTs depends significantly on the operating voltage. Higher operating voltage is a key to higher power gain for the AIGaN/GaN HEMTs. The developed 2-stage power MMIC delivers an output power of more than 10W with over 12dB power gain across the band of 9-11GHz at a drain bias of 30V. Peak output power inside the band reaches 14.7W with a power gain of 13.7dB and a PAE of 23%. The MMIC chip size is only 2.0mm × 1. 1mm. This work shows superiority over previously reported X-band AIGaN/GaN HEMT power MMICs in output power per millimeter gate width and output power per unit chip size.
文摘AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.
文摘AIGaN/GaN HEMTs are investigated by numerical simulation from the self-consistent solution of Schr6dinger-Poisson-hydrodynamic （HD） systems. The influences of polarization charge and quantum effects are considered in this model. Then the two-dimensional conduction band and electron distribution, electron temperature characteristics, Id versus Vd and Id versus Vg, transfer characteristics and transconductance curves are obtained. Corresponding analysis and discussion based on the simulation results are subsequently given.
文摘A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AIGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working trap is determined to be electronic. A numerical simulation verifies this conclusion and reproduces the measured transients. The electron traps at different spatial positions in the device-on the ungated surface of the AIGaN layer,in the AIGaN barrier, and in the GaN layer are considered;corresponding behaviors in the stress and the transients are discussed;and for the simulated transients, agreement with and deviation from the measured transients are explained. Based on this discussion, we suggest that the measured transients are caused by the combined effects of a deep surface trap and a bulk trap in the GaN layer.
