光刻产生AIGaAs微薄盘

德国汉堡的研究人员使用激光干涉光刻已经生产出大型AIGaAs半导体微薄盘列阵，活性离子蚀刻和拥有柠檬酸基溶液的选择性GaAs湿化学腐蚀。传统上电子束或HF基腐蚀溶液的光刻已产生微薄盘。

2μm像元间距GaAs/AlGaAs量子阱红外焦平面探测器

量子阱焦平面探测器具有大面阵焦平面探测器重复性和均匀性好、成品率高、成本低等明显的产业化优势,在军民两用领域获得了广泛而重要的应用。为了尽快研制出全国产化高性能量子阱红外焦平面探测器,通过完全正向的器件设计,采用常规光刻和反应离子刻蚀方法,成功研制出87.1%的高占空比320×256长波量子阱焦平面探测器,峰值波长9μm,平均峰值探测率1.6×1010cm·Hz1/2·W-1。第一支样管的噪声等效温差为33.2mK,响应率不均应性8.9%,面阵盲元率1%。在70K温度下获得了1km和4.2km处的建筑物的清晰成像。实验结果充分显示了器件设计的正确性及研制技术的可控性。

新型GaAs/AlGaAs量子阱红外探测器暗电流特性

对基于 Ga As/ Al Ga As系子带间吸收的一种新型量子阱红外探测器 ,采用 Poisson方程和 Schrodinger方程 ,计算了新器件结构的能带结构、电子分布特性 ,在此基础上采用热离子发射、热辅助遂穿模型对器件的暗电流特性进行了模拟 ,计算结果与器件实测的暗电流特性吻合得很好 ,说明热离子发射、热辅助遂穿机制是形成器件暗电流的主要构成机制 ,增加垒高、降低阱中掺杂浓度及降低工作温度是抑制器件暗电流的主要途径 ,计算结果对进一步优化器件的设计将起到重要的理论指导作用 .

δ掺杂的赝配HEMTAlGaAs／InGaAs／GaAs结构的光电流谱

本文首次报道了δ掺杂的赝配高电子迁移率晶体管结构（ＨＥＭＴＳ）Ａｌ０．３０Ｇａ０．７０Ａｓ／Ｉｎ０．１５Ｇａ０．８５Ａｓ／ＧａＡｓ的光电流谱研究．实验观察到了ｎ＝１重空穴子带到ｎ＝１电子子带和ｎ＝２电子子带的激子吸收峰以及ＧａＡｓ本征吸收相位变化所引起的光电流结构，并对光电流谱随温度和偏压变化的行为进行了讨论．

Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.

分子束外延生长Al_xGa_(1-x)As/GaAs超晶格及结构、光学特性研究

报道了分子束外延生长80个周期的Al_xGa_(1-x)As/GaAs超晶格,X射线衍射和透射电镜的结果表明超晶格样品有良好的结构特性,光反射光谱观察到阱内的电子跃迁过程,其结果与理论计算相符。

Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission

This work deals with the study of optical and morphological properties of InGaAs/AlGaAs quantum dot(QD) structures grown by molecular beam epitaxy(MBE) . Photoluminescence(PL) emission energies,activation energies of PL quenching and QD sizes are studied as functions of the Al content in the AlyGa1-yAs confining layers(CL) . We show that the PL emission energy of In(Ga) As/AlyGa1-yAs QD structures increases with increasing y and that the sizes of InAs/AlyGa1-yAs QDs decrease with increasing y. By the comparison of the experimental results with those of an effective-mass model developed to calculate the QD fundamental transition energies,we show that the blueshift of emission energy has to be ascribed not only to the increase in barrier discontinuities that confine the carriers into QDs but even to effects related to changes of the QD morphology dependent on CL composition. Moreover,we show that the Al content in the barriers determines also the activation energy of thermal quenching of PL,which depends on the thermal escape of carriers from QD levels. These studies resulted in the preparation of structures with efficient light-emission in the 980 nm spectral window of interest for lightwave communications.

Evaluation of the drain–source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method

The effect of drain-source voltage on A1GaAs/InGaAs PHEMTs thermal resistance is studied by experimental measuring and simulation. The result shows that A1GaAs/InGaAs PHEMTs thermal resistance presents a downward trend under the same power dissipation when the drain-source voltage （VDs） is decreased. Moreover, the relatively low VDS and large drain-source current （IDs） result in a lower thermal resistance. The chip-level and package-level thermal resistance have been extracted by the structure function method. The simulation result indicated that the high electric field occurs at the gate contact where the temperature rise occurs. A relatively low VDS leads to a relatively low electric field, which leads to the decline of the thermal resistance.

Tuning the second-harmonic generation in AlGaAs nanodimers via non-radiative state optimization [Invited]

Dielectric nanocavities are emerging as a versatile and powerful tool for the linear and nonlinear manipulation of light at the nanoscale. In this work, we exploit the effective coupling of electric and toroidal modes in AIGaAs nanodimers to locally enhance both electric and magnetic fields while minimizing the optical scattering, thereby optimizing their second-harmonic generation efficiency with respect to the case of a single isolated nanodisk. We also demonstrate that proper near-field coupling can provide fitrther degrees of freedom to control the polari- zation state and the radiation diagram of the second-harmonic field.