The Ain El Bey abandoned mine, in North-West Tunisia, fits into the geodynamic context of the European and African plate boundary. Ore deposit corresponds to veins and breccia of multiphase Cu–Fe-rich mineralization ...The Ain El Bey abandoned mine, in North-West Tunisia, fits into the geodynamic context of the European and African plate boundary. Ore deposit corresponds to veins and breccia of multiphase Cu–Fe-rich mineralization related to various hydrothermal fluid circulations. Petromineralogical studies indicate a rich mineral paragenesis with a minimum of seven mineralization phases and, at least, six pyrite generations. As is also the case for galena and native silver, native gold is observed for the first time as inclusion in quartz which opens up, thus, new perspectives for prospecting and evaluating the potential for noble metals associated with the mineralization. Scanning Electron Microscope--Energy Dispersive Spectroscopy and Transmission electron microscopy analyses show, in addition, a large incorporation of trace elements, including Ag and Au, in mineral structures such as fahlores(tetrahedrite-tennantite) and chalcopyrite ones. The mineral/mineral associations, used as geothermometers, gave estimated temperatures for the mineralizing fluids varying from 254 to 330 ℃ for phase Ⅲ, from 254 to 350 ℃ for phase Ⅳ, and from 200 to 300 ℃ for phases Ⅴ and Ⅵ. The seventh and last identified mineralization phase, marked by a deposit of native gold, reflects a drop in the mineralizing fluid’s temperature(< 200 ℃) compatible with boiling conditions. Such results open up perspectives for the development of precious metal research and the revaluation of the Cu–Fe ore deposit at the Ain El Bey abandoned mine, as well as at the surrounding areas fitting in the geodynamic framework of the Africa-Europe plate boundary.展开更多
本文介绍了用 x-射线衍射仪、扫描电镜和透射电镜来分析用直流平面磁控溅射法在载波片上生长的 AIN 薄膜的结构,结果表明 AIN 薄膜的(002)晶面与基片表面平行,迴摆曲线分析得出标准偏差σ≈0.7°,俄歇谱分析结果表明制得的 AIN 薄...本文介绍了用 x-射线衍射仪、扫描电镜和透射电镜来分析用直流平面磁控溅射法在载波片上生长的 AIN 薄膜的结构,结果表明 AIN 薄膜的(002)晶面与基片表面平行,迴摆曲线分析得出标准偏差σ≈0.7°,俄歇谱分析结果表明制得的 AIN 薄膜是高纯的。这种方法适于制取 C轴高度择优取向 AIN 薄膜。展开更多
We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AIN buffer layer. Improved structural quality and tensile stress releasing are ...We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AIN buffer layer. Improved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6 H—SiC substrates by metal organic chemical vapor deposition.Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the Raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer,we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.展开更多
基金funded by the “Laboratoire de Recherche Ressources, Matériaux et Ecosystémes”, University of Carthage 7021 Zarzouna, Bizerte, Tunisia
文摘The Ain El Bey abandoned mine, in North-West Tunisia, fits into the geodynamic context of the European and African plate boundary. Ore deposit corresponds to veins and breccia of multiphase Cu–Fe-rich mineralization related to various hydrothermal fluid circulations. Petromineralogical studies indicate a rich mineral paragenesis with a minimum of seven mineralization phases and, at least, six pyrite generations. As is also the case for galena and native silver, native gold is observed for the first time as inclusion in quartz which opens up, thus, new perspectives for prospecting and evaluating the potential for noble metals associated with the mineralization. Scanning Electron Microscope--Energy Dispersive Spectroscopy and Transmission electron microscopy analyses show, in addition, a large incorporation of trace elements, including Ag and Au, in mineral structures such as fahlores(tetrahedrite-tennantite) and chalcopyrite ones. The mineral/mineral associations, used as geothermometers, gave estimated temperatures for the mineralizing fluids varying from 254 to 330 ℃ for phase Ⅲ, from 254 to 350 ℃ for phase Ⅳ, and from 200 to 300 ℃ for phases Ⅴ and Ⅵ. The seventh and last identified mineralization phase, marked by a deposit of native gold, reflects a drop in the mineralizing fluid’s temperature(< 200 ℃) compatible with boiling conditions. Such results open up perspectives for the development of precious metal research and the revaluation of the Cu–Fe ore deposit at the Ain El Bey abandoned mine, as well as at the surrounding areas fitting in the geodynamic framework of the Africa-Europe plate boundary.
文摘本文介绍了用 x-射线衍射仪、扫描电镜和透射电镜来分析用直流平面磁控溅射法在载波片上生长的 AIN 薄膜的结构,结果表明 AIN 薄膜的(002)晶面与基片表面平行,迴摆曲线分析得出标准偏差σ≈0.7°,俄歇谱分析结果表明制得的 AIN 薄膜是高纯的。这种方法适于制取 C轴高度择优取向 AIN 薄膜。
基金Supported by the National Key R&D Program of China under Grant No 2016YFB0400200
文摘We study the effect of the AlGaN interlayer on structural quality and strain engineering of the GaN films grown on SiC substrates with an AIN buffer layer. Improved structural quality and tensile stress releasing are realized in unintentionally doped GaN thin films grown on 6 H—SiC substrates by metal organic chemical vapor deposition.Using the optimized AlGaN interlayer, we find that the full width at half maximum of x-ray diffraction peaks for GaN decreases dramatically, indicating an improved crystalline quality. Meanwhile, it is revealed that the biaxial tensile stress in the GaN film is significantly reduced from the Raman results. Photoluminescence spectra exhibit a shift of the peak position of the near-band-edge emission, as well as the integrated intensity ratio variation of the near-band-edge emission to the yellow luminescence band. Thus by optimizing the AlGaN interlayer,we could acquire the high-quality and strain-relaxation GaN epilayer with large thickness on SiC substrates.
