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纤锌矿结构AlInN电子及光学性质的第一性原理研究 被引量:8
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作者 高婷婷 王新强 +1 位作者 邝向军 何阿玲 《原子与分子物理学报》 CAS CSCD 北大核心 2011年第5期963-968,共6页
本文通过基于密度泛函理论的第一性原理,研究了纤锌矿结构Al_(1-x)In_xN在不同In浓度下的稳固结构,以及电子和光学性质的变化规律.研究表明,AlInN不同In浓度的晶格结构都很稳定,说明AlInN的兼容性很好.晶格常数随In浓度的增大不断增大,... 本文通过基于密度泛函理论的第一性原理,研究了纤锌矿结构Al_(1-x)In_xN在不同In浓度下的稳固结构,以及电子和光学性质的变化规律.研究表明,AlInN不同In浓度的晶格结构都很稳定,说明AlInN的兼容性很好.晶格常数随In浓度的增大不断增大,而混晶的带隙则不断减小.并且随In浓度的增大,混晶在紫外光区的吸收系数、反射系数及折射率增大,吸收边、吸收峰和反射峰红移,且这两个峰的峰值减小.AlInN的吸收、反射和折射率曲线在Eg处出现峰值行为,此Eg处的峰值大小随In浓度的增加而增大.当In浓度达到87.5%时,混晶AlInN在紫外光区的吸收、反射和折射能力均达到最强,表明此时的掺杂效果最好. 展开更多
关键词 ALINN 稳固结构 电子结构 光学性质
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Performance improvement of blue light-emitting diodes with an AlInN/GaN superlattice electron-blocking layer
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作者 赵芳 姚光锐 +6 位作者 宋晶晶 丁彬彬 熊建勇 苏晨 郑树文 张涛 范广涵 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第5期609-613,共5页
The characteristics of a blue light-emitting diode (LED) with an AIlnN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carder concentrations in the quantum wells, energy band di... The characteristics of a blue light-emitting diode (LED) with an AIlnN/GaN superlattice (SL) electron-blocking layer (EBL) are analyzed numerically. The carder concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AIInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AIGaN EBL or a A1GaN/GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used. 展开更多
关键词 ailnn/GaN superlattices efficiency droop numerical simulation
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Model development for analyzing 2DEG sheet charge density and threshold voltage considering interface DOS for AlInN/GaN MOSHEMT 被引量:2
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作者 Devashish Pandey T.R.Lenka 《Journal of Semiconductors》 EI CAS CSCD 2014年第10期26-29,共4页
A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is ... A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is presented. The mathematical dependence of these parameters is derived in conjunction with the interface density of states. The dependence of sheet charge density with the barrier thickness and with the oxide thickness is plotted and an insight into the barrier scaling properties of AIInN based MOSHEMTs is presented. The threshold voltage is also plotted with respect to barrier thickness and oxide thickness, which reveals the possibility of the enhance- ment mode operation of the device at low values of the interface DOS. The results are in good agreement with the fabricated device available in the literature. 展开更多
关键词 DOS ailnn MOSHEMT 2DEG barrier scaling
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