Glutamie acid (GLU) and γ-aminobutyric acid (GABA) are the two major amino acids present in the central nervous system. It is generally considered that GABA is a specific inhibitory neurotransmitter and that GLU is a...Glutamie acid (GLU) and γ-aminobutyric acid (GABA) are the two major amino acids present in the central nervous system. It is generally considered that GABA is a specific inhibitory neurotransmitter and that GLU is an excitatory neurotransmit ter. Our previous study indicated that while the level of GABA in brain was in-展开更多
In our previous paper we showed that a cyanideoresistant respiration was associated with mitochondrial preparations from corn seedlings. It was observed that the degree of sensitivity to cyanide was dependent upon the...In our previous paper we showed that a cyanideoresistant respiration was associated with mitochondrial preparations from corn seedlings. It was observed that the degree of sensitivity to cyanide was dependent upon the nature of substrates. The resistance of respiration to cyanide by isolated corn mitoehondria became higher in展开更多
美国应用材料(AMAT)发布了可形成适用于22nm～14nm逻辑IC的低介电率(low-k)层间绝缘膜的两款制造装置。分别是成膜装置"Producer Black Diamond3"和紫外线(UV)固化装置"Producer Nanocure 3"。由发布可知,因微处理...美国应用材料(AMAT)发布了可形成适用于22nm～14nm逻辑IC的低介电率(low-k)层间绝缘膜的两款制造装置。分别是成膜装置"Producer Black Diamond3"和紫外线(UV)固化装置"Producer Nanocure 3"。由发布可知,因微处理器耗电量的1/3为布线耗电量所占,因此市场上要求能够在降低布线耗电量的同时,确保高机械强度的层间绝缘膜。对此。展开更多
文摘Glutamie acid (GLU) and γ-aminobutyric acid (GABA) are the two major amino acids present in the central nervous system. It is generally considered that GABA is a specific inhibitory neurotransmitter and that GLU is an excitatory neurotransmit ter. Our previous study indicated that while the level of GABA in brain was in-
文摘In our previous paper we showed that a cyanideoresistant respiration was associated with mitochondrial preparations from corn seedlings. It was observed that the degree of sensitivity to cyanide was dependent upon the nature of substrates. The resistance of respiration to cyanide by isolated corn mitoehondria became higher in
文摘美国应用材料(AMAT)发布了可形成适用于22nm～14nm逻辑IC的低介电率(low-k)层间绝缘膜的两款制造装置。分别是成膜装置"Producer Black Diamond3"和紫外线(UV)固化装置"Producer Nanocure 3"。由发布可知,因微处理器耗电量的1/3为布线耗电量所占,因此市场上要求能够在降低布线耗电量的同时,确保高机械强度的层间绝缘膜。对此。
